EP0339534A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Customizable semiconductor devices
Assignee: QUICK TECHNOLOGIES Ltd
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Filing: 1989-04-24
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Granted: —
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Expires: 2009-04-24
Abstract
Abstract A selectably customizable semiconductor device including a first metal layer disposed in a first plane and including first elongate strips extending parallel to a first axis, a second metal layer disposed in a second plane generally parallel to and electrically insulated from the first plane and including second elongate strips extending parallel to a second axis, the second axis being generally perpendicular to the first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of the first and second metal layers overlap in electrical insulating relationship, the first metal layer including a plurality of fusible conductive bridges joining adjacent pairs of the first elongate strips, the fusible conductive bridges including first and second fusible links, the first metal layer also including a plurality of branch strips, each branch strip connecting one of the fusible conductive bridges at a location intermediate the first and second fusible links to a branch overlap location spaced from the multiplicity of elongate strip overlap locations, an electrical connection being formed between the first metal layer and the second metal layer at each of the branch overlap locations.
Inventors
- 👤 Zvi Orbach
- 👤 Meir I. Janai
- 👤 Uzi Yoeli
- 👤 Gideon Amir
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 08:11
CPC Classifications
H; H10; H10D; H10D86/00; H10D84/00; H10D84/90; H10D84/903; H10D84/907; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; H10W20/49; H10W20/493; H10W20/494
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
191 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship; said first metal layer comprising a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, each of said fusible conductive bridges comprising first and second fusible links; said first metal layer also comprising a plurality of branch strips, each branch strip connecting one of said fusible conductive bridges at a location intermediate said first and second fusible links to a branch overlap location spaced from said multiplicity of elongate strip overlap locations, an electrical connection being formed between said first metal layer and said second metal layer at each of said branch overlap locations.
Claim 2
Dependent Claim
191 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship; said first metal layer comprising a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, each of said fusible conductive bridges comprising first and second fusible links; said first metal layer also comprising a plurality of branch strips, each branch strip connecting one of said fusible conductive bridges at a location intermediate said first and second fusible links to a branch overlap location spaced from said multiplicity of elongate strip overlap locations, an electrical connection being formed between said first metal layer and said second metal layer at each of said branch overlap locations.
Claim 3
Dependent Claim
55 words
A selectably customizable semiconductor device according to claim 1 and also comprising a fusible link formed on each strip of said pair of adjacent first elongate strips intermediate each pair of adjacent fusible conductive bridges and a fusible link formed on each of said second elongate strips intermediate each pair of adjacent branch overlap locations.
Claim 4
Dependent Claim
207 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship; said first metal layer comprising a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, said fusible conductive bridges comprising first and second fusible links; an electrical connection being formed between said first metal layer and said second metal layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive bridge intermediate said first and second fusible links and overlapping said second elongate strips intermediate adjacent elongate strip overlap locations, and wherein branch overlap locations overlapping adjacent parallel elongate strips are offset from each other such that they are not all aligned along a single line extending perpendicular to said parallel elongate strips.
Claim 5
Dependent Claim
207 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship; said first metal layer comprising a plurality of fusible conductive bridges joining adjacent pairs of said first elongate strips, said fusible conductive bridges comprising first and second fusible links; an electrical connection being formed between said first metal layer and said second metal layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive bridge intermediate said first and second fusible links and overlapping said second elongate strips intermediate adjacent elongate strip overlap locations, and wherein branch overlap locations overlapping adjacent parallel elongate strips are offset from each other such that they are not all aligned along a single line extending perpendicular to said parallel elongate strips.
Claim 6
Dependent Claim
55 words
A selectably customizable semiconductor device according to claim 3 and also comprising a fusible link formed on each strip of said pair of adjacent first elongate strips intermediate each pair of adjacent fusible conductive bridges and a fusible link formed on each of said second elongate strips intermediate each pair of adjacent branch overlap locations.
Claim 7
Dependent Claim
217 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship; said second metal layer comprising a plurality of fusible conductive bridges joining adjacent pairs of said second elongate strips, said fusible conductive bridges comprising first and second fusible links; an electrical connection being formed between said first metal layer and said second metal layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive bridge intermediate said first and second fusible links and overlapping said first elongate strips intermediate adjacent elongate strip overlap locations, a third fusible link being formed on said first first elongate strips and disposed adjacent to each of said first and second fusible links, said first metal layer being a metal I layer and said second metal layer being a metal II layer.
Claim 8
Dependent Claim
217 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship; said second metal layer comprising a plurality of fusible conductive bridges joining adjacent pairs of said second elongate strips, said fusible conductive bridges comprising first and second fusible links; an electrical connection being formed between said first metal layer and said second metal layer at a plurality of branch overlap locations, said branch overlap locations being disposed along a fusible conductive bridge intermediate said first and second fusible links and overlapping said first elongate strips intermediate adjacent elongate strip overlap locations, a third fusible link being formed on said first first elongate strips and disposed adjacent to each of said first and second fusible links, said first metal layer being a metal I layer and said second metal layer being a metal II layer.
Claim 9
Dependent Claim
198 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship; said second metal layer including a plurality of fusible conductive branches joined to said second elongate strips, said fusible conductive branches including a first fusible link and said first first elongate strips including a second fusible link adjacent each fusible conductive branch; an electrical connection being formed between said first metal layer and said second metal layer at a plurality of branch overlap locations, said branch overlap locations being disposed along said fusible conductive branches overlapping said first elongate strips intermediate adjacent elongate strip overlap locations, said first metal layer being a metal I layer and said second metal layer being a metal II layer.
Claim 10
Dependent Claim
198 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis; a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship; said second metal layer including a plurality of fusible conductive branches joined to said second elongate strips, said fusible conductive branches including a first fusible link and said first first elongate strips including a second fusible link adjacent each fusible conductive branch; an electrical connection being formed between said first metal layer and said second metal layer at a plurality of branch overlap locations, said branch overlap locations being disposed along said fusible conductive branches overlapping said first elongate strips intermediate adjacent elongate strip overlap locations, said first metal layer being a metal I layer and said second metal layer being a metal II layer.
Claim 11
Dependent Claim
34 words
A selectably customizable semiconductor device according to any of claims 1 - 4 and wherein said first metal layer is a metal I layer and said second metal layer is a metal II layer.
Claim 12
Dependent Claim
34 words
A selectably customizable semiconductor device according to any of claims 1 - 4 and wherein said first metal layer is a metal II layer and said second metal layer is a metal I layer.
Claim 13
Dependent Claim
127 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis, first fusible links being formed on said first metal layer; and a second metal layer disposed over said first metal layer in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship, second fusible links being formed on said second metal layer at locations which overlap said first elongate strips.
Claim 14
Dependent Claim
127 words
A selectably customizable semiconductor device comprising: a first metal layer disposed in a first plane and comprising first elongate strips extending parallel to a first axis, first fusible links being formed on said first metal layer; and a second metal layer disposed over said first metal layer in a second plane generally parallel to and electrically insulated from said first plane and comprising second elongate strips extending parallel to a second axis, said second axis being generally perpendicular to said first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of said first and second metal layers overlap in electrical insulating relationship, second fusible links being formed on said second metal layer at locations which overlap said first elongate strips.
Claim 15
Dependent Claim
127 words
A selectably customizable semiconductor device comprising: a first electrically conducting layer disposed in a first plane and comprising a plurality of first elongate electrically conducting strips extending generally parallel to a first axis, and having a given periodic spacing, each of said first elongate strips comprising a plurality of collinear, mutually spaced elongate electrically conducting segments defining a plurality of gaps therebetween, the length of said segments not exceeding ten times the periodic spacing of said strips; a second electrically conducting layer generally electrically insulated from said first layer and disposed in a second plane generally parallel to said first plane; a plurality of first electrical connecting means engaging said segments at locations adjacent said gaps for joining said first conducting layer to said second conducting layer.
Claim 16
Dependent Claim
127 words
A selectably customizable semiconductor device comprising: a first electrically conducting layer disposed in a first plane and comprising a plurality of first elongate electrically conducting strips extending generally parallel to a first axis, and having a given periodic spacing, each of said first elongate strips comprising a plurality of collinear, mutually spaced elongate electrically conducting segments defining a plurality of gaps therebetween, the length of said segments not exceeding ten times the periodic spacing of said strips; a second electrically conducting layer generally electrically insulated from said first layer and disposed in a second plane generally parallel to said first plane; a plurality of first electrical connecting means engaging said segments at locations adjacent said gaps for joining said first conducting layer to said second conducting layer.
Claim 17
Dependent Claim
167 words
A selectably customizable semiconductor device according to claim 10 and wherein said second layer comprises: a plurality of pairs of adjacently disposed second elongate electrically conducting strips, extending generally parallel to a second axis, said second axis being generally perpendicular to said first axis, each said pair comprising first and second strip members; a plurality of third elongate electrically conducting strips extending generally parallel to said first axis, each of said plurality of third strips being electrically joined to at least two of said plurality of second strips and overlapping at least part of said first electrically conducting strips; and first, second and third fusible links formed in at least one of said plurality of third elongate electrically conducting strips, said first and second fusible links being disposed between a respective one said first electrical connecting means and a respective adjacent one of said second conducting strips, said third fusible link being disposed intermediate respective ones of said first electrical connecting means, and thus bridging said gap.
Claim 18
Dependent Claim
78 words
A selectably customizable semiconductor device according to claim 11 and wherein said second layer also comprises a plurality of fourth elongate electrically conducting strips extending generally parallel to said first axis, each of said plurality of fourth strips being electrically joined to at least two of said plurality of second strips and overlapping at least part of said first electrically conducting strips, a fusible link being formed on at least one of said fourth elongate electrically conducting strips.
Claim 19
Dependent Claim
25 words
An at least partially customized semiconductor device according to any of the preceding claims and wherein at least some of said fusible links are fused.
Claim 20
Independent Claim
41 words
A method for selectably customizing a customizable semiconductor device comprising the steps of: providing a selectably customizable semiconductor device according to any of claims 1 - 9 and 11 - 13; and selectably fusing some of said plurality of fusible links.
Claim 21
Dependent Claim
24 words
A method according to claim 14 and wherein said selectably fusing step comprises applying laser radiation to some of said plurality of fusible links.
Claim 22
Dependent Claim
22 words
A method according to claim 14 and wherein said selectably fusing step comprises chemically etching some of said plurality of fusible links.
Claim 23
Dependent Claim
22 words
A method according to claim 14 and wherein said selectably fusing step comprises ion milling some of said plurality of fusible links.
References Cited (Backward Citations)
No citation records indexed.
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