EP0339315A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
A method for fabricating semiconductor devices which are protected from pattern contamination
Assignee: Kyushu Fujitsu Electronics Ltd
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Filing: 1989-04-05
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Granted: —
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Expires: 2009-04-05
Abstract
Abstract A method for preventing a contamination caused by residues of etched off patterns by photolithographic etching. A considerable part of small contamination spots on semiconductor chip is found to be caused by tiny residues of etched off patterns. These residues are found especially around the periphery of device area and mark patterns when their outside are etched off. The occurrence of such residues of etching is enhanced by anisotropic etching. These residues are dropped off by succeeding process of the pattern making, and disperse over the substrate causing a small contamination spots. To avoid the bad effects of the etching residues, the edges of the mark patterns and device areas are covered with an edge cover which is formed in a step following to the pattern etching process.
Inventors
- 👤 Hidehiko Shiraiwa
- 👤 Hisatsugu Miyamaedaira Aberia 2-501 Shirai
- 👤 Nobuhiro Takahashi
- 👤 Shinichi Nomura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 03:53
CPC Classifications
H; H10; H10W; H10W46/00; H10W46/501; H10W46/503; Y; Y10; Y10S; Y10S148/00; Y10S148/028
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
149 words
A method for fabricating semiconductor devices comprising a process for forming a plurality of device areas which include semiconductor devices formed therein and a scribing area for separating each of said device areas from each other, said device areas and said scribing area being formed on a semiconductor substrate, said process comprising: a first process for forming at least one of plurality of mark patterns in said scribing area; and a second process which is carried on after said first process, said second process comprising the steps of forming an edge cover for at least one of said plurality of mark patterns and said device patterns, each of said edge covers covering at least the peripheral portion of the mark pattern or device pattern which said edge cover is covering, extending toward scribing area over the edge of said mark pattern or device pattern, and contacting with said substrate.
Claim 2
Independent Claim
149 words
A method for fabricating semiconductor devices comprising a process for forming a plurality of device areas which include semiconductor devices formed therein and a scribing area for separating each of said device areas from each other, said device areas and said scribing area being formed on a semiconductor substrate, said process comprising: a first process for forming at least one of plurality of mark patterns in said scribing area; and a second process which is carried on after said first process, said second process comprising the steps of forming an edge cover for at least one of said plurality of mark patterns and said device patterns, each of said edge covers covering at least the peripheral portion of the mark pattern or device pattern which said edge cover is covering, extending toward scribing area over the edge of said mark pattern or device pattern, and contacting with said substrate.
Claim 3
Dependent Claim
34 words
A method for fabricating semiconductor devices according to claim 1, wherein, said first process and second process are repeated until all of said mark patterns and said device patterns are provided with edge covers.
Claim 4
Independent Claim
86 words
A method for fabricating semiconductor devices according to claims 1 or 2, wherein: said first process comprises, a step 1-a), for forming a first layer over said substrate; a step 1-b), for forming at least one of first mark patterns by patterning said first layer; and said second process comprises, a step 2-a), for forming a second layer over said substrate; a step 2-b), for forming an edge cover for at least one of said first mask patterns or device patterns, by patterning said second layer.
Claim 5
Dependent Claim
31 words
A method for fabricating semiconductor devices according to claim 3, wherein said steps 1-a), 1-b), 2-a) and 2-b) are respectively common to one of the steps for forming said device areas.
Claim 6
Dependent Claim
43 words
A method for fabricating semiconductor devices according to claim 1, wherein, each of said edge cover is extending on both sides of the edge of the mark patterns or device areas which said edge cover is covering approximately from one to ten µm.
Claim 7
Dependent Claim
21 words
A method for fabricating semiconductor devices according to claim 1, wherein said edge cover is patterned by an anisotropic etching process.
Claim 8
Dependent Claim
53 words
A semiconductor device having a device area in which semiconductor element devices or a semiconductor circuit are formed, said semiconductor device comprising an edge cover composed of a layer which is covering the peripheral portion of said device area, extending outward and contacting to the substrate on which said device area is formed.
Claim 9
Dependent Claim
53 words
A semiconductor device having a device area in which semiconductor element devices or a semiconductor circuit are formed, said semiconductor device comprising an edge cover composed of a layer which is covering the peripheral portion of said device area, extending outward and contacting to the substrate on which said device area is formed.
Claim 10
Dependent Claim
32 words
A semiconductor device according to claim 7, wherein said edge cover is extending to both the outside and inside from the edge of said device area about from one to ten µm.
Claim 11
Independent Claim
83 words
A method for fabricating semiconductor devices comprising the steps of: providing a semiconductor substrate having device areas each separated by a scribing area, each of the device areas having a step at an edge thereof; forming a film on the device areas and the scribing areas; and patterning said film by anisotropic etching to form a part of semiconductor devices, said film being etched off so that said film remains on the step and extends toward the device areas and the scribing area.
Claim 12
Independent Claim
83 words
A method for fabricating semiconductor devices comprising the steps of: providing a semiconductor substrate having device areas each separated by a scribing area, each of the device areas having a step at an edge thereof; forming a film on the device areas and the scribing areas; and patterning said film by anisotropic etching to form a part of semiconductor devices, said film being etched off so that said film remains on the step and extends toward the device areas and the scribing area.
References Cited (Backward Citations)
FR2282162A1
Cited
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