EP0339279A2
Expired / Lapsed
EP
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Method for making a wafer holder for use in rapid thermal processing equipment
Assignee: Air Products and Chemicals Inc
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Filing: 1989-03-29
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Granted: —
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Expires: 2009-03-29
Abstract
Abstract A semiconductor wafer holding and support fixture having a low effective thermal mass comprises a planar surface having a recess for a wafer and consisting essentially of chemical vapor deposited silicon carbide. The wafer holder is specifically designed to isolate the wafer from regions of significant thermal mass of the holder. The wafer holder is particularly adapted for accomplishing chemical reactions in rapid thermal processing equipment in the fabrication of electronic integrated circuits. The method for making such an article comprises shaping a substrate, e.g. graphite, to provide a planar surface having a recess, installing means for masking any regions of the substrate where silicon carbide is not desired, chemically vapor depositing a conformal outer coating of silicon carbide onto the substrate, removing the means for masking and removing the graphite by machining, drilling, grit-blasting, dissolving and/or burning.
Inventors
- 👤 Michael Brant Miller
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 08:41
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4581; C23C14/00; C23C14/22; C23C14/50; C23C16/01; C23C16/04; C23C16/042; C23C16/22; C23C16/30; C23C16/32; C23C16/325; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10T; Y10T428/00; Y10T428/13; Y10T428/131; Y10T428/21; Y10T428/24; Y10T428/24479; Y10T428/24488; Y10T428/24562; Y10T428/24628; Y10T428/24653; Y10T428/30
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
37 words
A wafer holding fixture of low thermal mass having a planar surface containing a recess capable of receiving a wafer and consisting essentially of chemical vapor deposited silicon carbide for use in a rapid thermal processing apparatus.
Claim 2
Dependent Claim
37 words
A wafer holding fixture of low thermal mass having a planar surface containing a recess capable of receiving a wafer and consisting essentially of chemical vapor deposited silicon carbide for use in a rapid thermal processing apparatus.
Claim 3
Dependent Claim
25 words
The fixture of Claim 1 wherein a sidewall is connected to said planar surface and having a height greater than the depth of the recess.
Claim 4
Dependent Claim
13 words
The fixture of Claim 1 wherein said sidewall extends above said planar surface.
Claim 5
Dependent Claim
13 words
The fixture of Claim 1 wherein said sidewall extends below said planar surface.
Claim 6
Dependent Claim
17 words
The fixture of Claim 2 wherein an annular section is provided comprised of silicon carbide coated graphite.
Claim 7
Dependent Claim
11 words
The fixture of Claim 5 wherein the annular section is hollow.
Claim 8
Dependent Claim
23 words
The fixture of Claim 2 wherein the annular section is sufficiently remote from said recess to provide rapid thermal response of the wafer.
Claim 9
Dependent Claim
31 words
The fixture of Claim 1 wherein the recess comprises an annular lip upon which the wafer is positioned and the remaining portion of the recess is open and free of material.
Claim 10
Dependent Claim
16 words
The fixture of Claim 1 is used in rapid thermal processing apparatus to accomplish chemical reactions.
Claim 11
Dependent Claim
21 words
The fixture of Claim 1 wherein the silicon carbide is chemically vapor deposited onto a substrate and the substrate is removed.
Claim 12
Dependent Claim
10 words
The fixture of Claim 10 wherein the substrate is graphite.
Claim 13
Dependent Claim
22 words
The fixture of Claim 1 wherein the thickness of said planar surface is in the range of 0.015 inch to 0.025 inch.
Claim 14
Dependent Claim
53 words
A wafer holding fixture of low thermal mass having an upper planar surface containing a recess capable of receiving a wafer and a connected sidewall having a height greater than the depth of the recess for use in a rapid thermal processing apparatus, said fixture comprising monolithic chemical vapor deposited silicon carbide .
Claim 15
Dependent Claim
53 words
A wafer holding fixture of low thermal mass having an upper planar surface containing a recess capable of receiving a wafer and a connected sidewall having a height greater than the depth of the recess for use in a rapid thermal processing apparatus, said fixture comprising monolithic chemical vapor deposited silicon carbide .
Claim 16
Dependent Claim
17 words
The fixture of Claim 13 wherein an annular section is provided comprised of silicon carbide coated graphite.
Claim 17
Dependent Claim
11 words
The fixture of Claim 14 wherein the annular section is hollow.
Claim 18
Dependent Claim
23 words
The fixture of Claim 13 wherein the annular section is sufficiently remote from said recess to provide rapid thermal response of the wafer.
Claim 19
Dependent Claim
31 words
The fixture of Claim 13 wherein the recess comprises an annular lip upon which the wafer is positioned and the remaining portion of the recess is open and free of material.
Claim 20
Dependent Claim
16 words
The fixture of Claim 13 is used in rapid thermal processing apparatus to accomplish chemical reactions.
Claim 21
Dependent Claim
26 words
The fixture of Claim 13 wherein the thickness of said upper planar surface and said sidewall are in the range of 0.015 inch to 0.025 inch.
Claim 22
Independent Claim
104 words
The method of making a wafer holding fixture of low thermal mass having a planar surface containing a recess for a wafer and consisting essential of silicon carbide which comprises: (a) shaping a substrate to provide a desired configuration for said fixture including the planar surface containing the recess; (b) installing means for masking any region of the substrate where silicon carbide is not desired; (c) chemically vapor depositing a substantially smooth outer refractory coating of silicon carbide onto the substrate; (d) removing the means for masking; and (e) removing at least the portion of the substrate in the immediate vicinity of the recess.
Claim 23
Independent Claim
104 words
The method of making a wafer holding fixture of low thermal mass having a planar surface containing a recess for a wafer and consisting essential of silicon carbide which comprises: (a) shaping a substrate to provide a desired configuration for said fixture including the planar surface containing the recess; (b) installing means for masking any region of the substrate where silicon carbide is not desired; (c) chemically vapor depositing a substantially smooth outer refractory coating of silicon carbide onto the substrate; (d) removing the means for masking; and (e) removing at least the portion of the substrate in the immediate vicinity of the recess.
Claim 24
Dependent Claim
23 words
The method of Claim 20 wherein any portion of the substrate that remains after step (d) is chemical vapor deposited with silicon carbide.
Claim 25
Dependent Claim
10 words
The method of Claim 21 wherein the substrate is graphite.
Claim 26
Dependent Claim
10 words
The method of Claim 20 wherein the substrate is graphite.
Claim 27
Dependent Claim
27 words
The method of Claim 20 wherein the substrate is alumina which contains an outer layer of material which prevents adhesion of the silicon carbide to said substrate.
Claim 28
Dependent Claim
11 words
The method of Claim 20 wherein said material is graphite powder.
Claim 29
Dependent Claim
25 words
The method of Claim 20 wherein the substrate is alumina and the alumina is coated with an aqueous slurry of graphite powder and subsequently dried.
References Cited (Backward Citations)
No citation records indexed.
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