Semiconductor chip module

Claim 2

A semiconductor chip module in which a plurality of semiconductor chips (12) are mounted on a circuit board (15), the chips (12) being connected to the board (15) by a multiplicity of contacts; characterised in that: there is an intermediate insulting substrate (11) between each chip (12) and the board (15) and spaced from at least the latter, the substrates (11) having substantially the same thermal expansion coefficient as the chips, each substrate (11) connecting the corresponding chip (12) to the board (15) via connecting members (14) adapted to permit relative displacement due to the thermal expansion coefficient between the substrate (11) and the chip (15).

Claim 3

A semiconductor chip module comprising; a plurality of semiconductor chips (12) each provided with an array of contacts substantially entirely over its front face; a multi-layered organic cicuit board (15), mounting said semiconductor chips (12) on its front face, said multi-layered organic circuit board (15) being provided on its front face, with an array of contacts (19) corresponding to the array of contacts of said respective semiconductor chips (12), and said multi-layered organic circuit board (11) being provided on its back face with a plurality of engage- and disengageable connector pins (20); intermediate insulating substrates (11) each disposed between said respective semiconductor chips (12) and said multi-layered organic circuit board (15), the thermal expansion coefficient of each said intermediate insulating substrate (11) being substantially the same as that of the corresponding semiconductor chip (12) each of said intermediate insulating substrates (11) being provided with an array of contacts on its front and back faces corresponding to that of the corresponding semiconductor chip (12), the contacts on the front face of said intermediate insulating substrate (11) being electrically connected directly to the corresponding contacts on the back face of said intermediate insulating substrate (11), the respective contacts on the front face of said intermediate insulating substrate (11) being electrically connected to the corresponding contacts on the front face of said semiconductor chip through a solder; connecting members (14) electrically connecting the contacts (18) on the back face of said intermediate insulating substrate (11) to the corresponding contacts (19) on the front face of said multi-layered organic circuit board (15), and mechanically coupling said intermediate insulating substrate (11) with said multi-­layered organic circuit board (15) to the extent permitting relative displacement of said intermediate insulating substrate (11) to said multi-layered organic circuit board (15) due to thermal expansion difference therebetween through a gap of predetermined distance, said connecting member (14) includes electrical conductors with a predetermined flexibility and rigidity bridged between the respective corresponding contacts (18, 19) on the back face of said intermediate insulating substrate (11) and on the front face of said multi-layered organic circuit board (15) and bonded thereat through a solder.

Claim 4

A semiconductor chip module comprising; a plurality of semiconductor chips (12) each provided with an array of contacts substantially entirely over its front face; a multi-layered organic cicuit board (15), mounting said semiconductor chips (12) on its front face, said multi-layered organic circuit board (15) being provided on its front face, with an array of contacts (19) corresponding to the array of contacts of said respective semiconductor chips (12), and said multi-layered organic circuit board (11) being provided on its back face with a plurality of engage- and disengageable connector pins (20); intermediate insulating substrates (11) each disposed between said respective semiconductor chips (12) and said multi-layered organic circuit board (15), the thermal expansion coefficient of each said intermediate insulating substrate (11) being substantially the same as that of the corresponding semiconductor chip (12) each of said intermediate insulating substrates (11) being provided with an array of contacts on its front and back faces corresponding to that of the corresponding semiconductor chip (12), the contacts on the front face of said intermediate insulating substrate (11) being electrically connected directly to the corresponding contacts on the back face of said intermediate insulating substrate (11), the respective contacts on the front face of said intermediate insulating substrate (11) being electrically connected to the corresponding contacts on the front face of said semiconductor chip through a solder; connecting members (14) electrically connecting the contacts (18) on the back face of said intermediate insulating substrate (11) to the corresponding contacts (19) on the front face of said multi-layered organic circuit board (15), and mechanically coupling said intermediate insulating substrate (11) with said multi-­layered organic circuit board (15) to the extent permitting relative displacement of said intermediate insulating substrate (11) to said multi-layered organic circuit board (15) due to thermal expansion difference therebetween through a gap of predetermined distance, said connecting member (14) includes electrical conductors with a predetermined flexibility and rigidity bridged between the respective corresponding contacts (18, 19) on the back face of said intermediate insulating substrate (11) and on the front face of said multi-layered organic circuit board (15) and bonded thereat through a solder.

Claim 5

A semiconductor chip module according to claim 1 or claim 2 wherein the electrical conductor of said connecting member (14) is formed of a material selected from the group consisting of copper, a copper-alloy, and an iron-nickel alloy.

Claim 6

The semiconductor chip module according to claim 2, wherein said electrical conductor of said connecting member has a pin shape.

Claim 7

A semiconductor chip module according to claim 4, wherein the diameter of said pin shaped electrical conductor is 0.1 to 0.2 mm.

Claim 8

A semiconductor chip module according to claim 3, wherein the electrical conductor of said connecting member has a strip shape.

Claim 9

A semiconductor chip module according to claim 3, wherein the electrical conductor of said connecting member has a spiral shape.

Claim 10

A semiconductor chip module according to claim 2, wherein the electrical conductor of said connecting member has a corrugate shape.

Claim 11

A semiconductor chip module according to any one of the preceding claims wherein the gap between said substrate and said board is 0.5 to 1.0 mm.

Claim 12

A semiconductor chip module according to any one of the preceding claims substrate wherein said substrate includes first and second intermediate insulating substrates, said first intermediate insulating substrate being provided with an array of contacts each on its front and back faces corresponding to that of said semiconductor chip, the contacts on the front face of said first intermediate insulating substrate being electrically connected directly to the corresponding contacts on the back face of said first intermediate insulating substrate, the respective contacts on the front face of said first intermediate insulating substrate being electrically connected to the corresponding contacts on the front face of said semiconductor chip through a solder, the thermal expansion coefficient of said second intermediate insulating substrate being substantially the same as that of said first intermediate insulating substrate, said second intermediate insulating substrate being provided with an array of contacts each on its front and back faces corresponding to that of said first intermediate insulating substrate, the contacts on the front face of said second intermediate insulating substrate being electrically connected directly to the corresponding contacts on the back face of said second intermediate insulating substrate, the respectinve contacts on the front face of said second intermediate insulating substrate being electrically connected to the corresponding contacts on the back face of said first intermediate insulating substrate through a solder, and said second intermediate insulating substrate further carries said respective electrical conductors of said connecting member through the respective contacts on the back face of said second intermediate insulating substrate.

Claim 13

A semiconductor chip module according to any one of the preceding claims wherein substrate includes a built-in capacitor.

Claim 14

A semiconductor chip module according to claim 11, wherein said built-in capacitor in said intermediate insulating substrate comprises an inorganic layer having a high dielectric constant and formed of a perovskite material including at least one of PbO, Fe₂O₃, WO₃, TiO₂ and Nb₂O₅ and a pair of electrodes disposed on the both faces of the inorganic layer.

Claim 15

A semiconductor chip module according to any one of the preceding claims wherein the thermal expansion coefficient of said intermediate insulating substrate is 30 to 65 x 10⁻⁷/°C.

Claim 16

A semiconductor chip module according to any one of the preceding claims wherein said intermediate insulating substrate is formed of a material comprising composites of silica and borosilicate glass, silica and aluminum borate glass, or alumina and borosilicate glass.

Claim 17

A semiconductor chip module according to any one of the preceding claims wherein said board is formed of a material selected from the group consisting of epoxy, isomelamine and fluorine resins.

Claim 18

The semiconductor chip module according to any one of the preceding claims, the spacing between adjacent contacts on the face of said intermediate insulating substrate adjacent the board is larger than that between adjacent contacts on the face thereof adjacent the chip.

Claim 19

A semiconductor chip module according to any one of the preceding claims wherein each semiconductor chip on its back face furthest from the substrate with a ceramic insulating plate having a high thermal conductivity for radiating heat generated thereby.