EP0336172A2
Expired / Lapsed
EP
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Semiconductor device capable of extremely fast switching
Assignee: Siemens AG
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Filing: 1989-03-17
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Granted: —
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Expires: 2009-03-17
Abstract
Abstract A fast-switching MITFET having a quantum-well layer structure (8) with a central layer (9) of defined thickness and a rough interface (9/10; 19/10) between central layer (9, 19) and adjacent layer (10). <IMAGE>
Inventors
- 👤 Alfred Dr. Rer. Nat. Gold
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 09:34
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/204; H10D62/00; H10D62/50; H10D62/53; H10D62/80; H10D62/82; H10D62/824
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