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EP0334110A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Process for producing polycristalline layers with large crystals for thin film semiconductor devices, like solar cells

Assignee: Siemens AG
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Filing: 1989-03-08
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Granted: —
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Expires: 2009-03-08
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Abstract

Abstract In a process for producing polycrystalline layers (3) having coarse crystalline structure, a thin interlayer (2) of amorphous material of the same type is deposited before the deposition of the polycrystalline layer (3) to avoid crystal structure effects originating from the substrate (1) and said interlayer (2) is then recrystallised (4) with the polycrystalline layer (3). As a result of the amorphous interlayer (2) any influence due to the fine crystalline structure of the substrate (1) is reliably avoided and the thin-layer technology can also be applied to polycrystalline silicon layers, which is of great benefit, in particular, in the production of solar cells. <IMAGE>

Inventors

  • 👤 Rolf Dr. Plättner

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 22:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10F; H10F71/00; H10F71/121; H10F71/1221; H10F71/128; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546; Y02P; Y02P70/00; Y02P70/50

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References Cited (Backward Citations)

DE2743141A1 Cited

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