Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
116 words
A semiconductor device comprising: a semiconductor chip on the main surface of which are circuitry and external terminals, a substrate having a metal film at a region to which the semiconductor chip is secured, a plurality of wires for electrically connecting the external terminals and a plurality of conductors, a plurality of first wiring conductors within the substrate and extending in a direction generally perpendicular to the main surface of the semiconductor chip with one end thereof being connected to the conductor, second wiring conductors within the substrate, the second wiring conductors being spaced apart around respective ones of the first wiring conductors, and a metal cap encapsulating the semiconductor chip, wires, metal film and conductors.
Claim 2
Dependent Claim
116 words
A semiconductor device comprising: a semiconductor chip on the main surface of which are circuitry and external terminals, a substrate having a metal film at a region to which the semiconductor chip is secured, a plurality of wires for electrically connecting the external terminals and a plurality of conductors, a plurality of first wiring conductors within the substrate and extending in a direction generally perpendicular to the main surface of the semiconductor chip with one end thereof being connected to the conductor, second wiring conductors within the substrate, the second wiring conductors being spaced apart around respective ones of the first wiring conductors, and a metal cap encapsulating the semiconductor chip, wires, metal film and conductors.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein the central region of the metal cap is thicker than the peripheral part thereof.
Claim 4
Dependent Claim
26 words
A semiconductor device according to claim 1 or claim 2, wherein the metal film is a tungsten (W) film plated with nickel (Ni) and gold (Au).
Claim 5
Dependent Claim
21 words
A semiconductor device according to any one of the preceding claims, wherein the plurality of conductors are of tungsten (W) film.
Claim 6
Dependent Claim
23 words
A semiconductor device according to any one of the preceding claims, wherein the first and second wiring conductors are mainly of tungsten (W).
Claim 7
Dependent Claim
27 words
A semiconductor device according to any one of the preceding claims, wherein at least one of the second wiring conductors is at the outside of the substrate.
Claim 8
Dependent Claim
20 words
A semiconductor device according to any one of the preceding claims, wherein the first wiring conductors are column type conductors.
Claim 9
Dependent Claim
28 words
A semiconductor device according to any one of the preceding claims, wherein the first and second wiring conductors and a part of the metal film are substantially parallel.
Claim 10
Dependent Claim
28 words
A semiconductor device according to any one of the preceding claims, wherein there is a Chebyshev type filter connected to at least one of the first wiring conductors.
Claim 11
Dependent Claim
18 words
A semiconductor device according to claim 9, wherein there is a wire connected to the Chebychev type filter.
Claim 12
Dependent Claim
19 words
A semiconductor device according to claim 9 or claim 10, wherein the Chebychev type filter is of tungsten film.