EP0327996A2
Expired / Lapsed
EP
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Tape automated bonding of bumped tape on bumped die
Assignee: National Semiconductor Corp
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Filing: 1989-02-03
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Granted: —
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Expires: 2009-02-03
Abstract
Abstract A tape automated bonding structure (10) includes a copper flexible tape with a plurality of conductive leads (14) having tips (16) arranged in a generally rectangular pattern corresponding to gold bumped contacts (18) on semiconductor die (20). The tips (16) of the conductive leads (14) are configured as bumps extending from the remainder of each conductive lead (14). The tips (16) of the conductive leads (14) are gang bonded to the bumped contacts (18) on the semiconductor die (20) by positioning the tips (16) in registration over each bumped contact and applying heat and pressure to urge the tips (16) and the bumped contacts together, thus forming a thermocompression bond. The harder copper tips (16) penetrate into the gold bumped contacts. The bumped contacts (18) and the remainder of the tips (16) that has not penetrated into the contacts (18) space the conductive leads (14) above surface (22) of the semiconductor die (20).
Inventors
- 👤 Venkat Iyer
- 👤 Hem P. Takiar
- 👤 Jagdish Belani
- 👤 Rajenda Pendse
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 16:53
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W70/00; H10W70/40; H10W70/453; H10W99/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/251
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
194 words
An interconnection structure, which comprises a semiconductor die having a surface and a plurality of conductive contact bumps on the surface of said semiconductor die and extending above the surface, a like plurality of conductive interconnection leads having a principal portion with a surface facing toward the surface of said semiconductor die, said like plurality of conductive interconnection leads having tips of increased thickness which project beyond the surface of said like plurality of conductive interconnection leads toward said plurality of conductive contact bumps, said plurality of contact bumps being of the same material as the tips of increased thickness, or said plurality of conductive contact bumps being formed from a ductile material having a first hardness, said like plurality of conductive interconnection leads having at least their tips formed from a material having a second hardness greater than the first hardness and the tips of said like plurality of conductive interconnection leads being bonded with each tip penetrating into its associated one of said plurality of conductive contact bumps, the tips of one of said like plurality of conductive interconnection leads each being bonded to one of said plurality of conductive contact bumps.
Claim 2
Dependent Claim
194 words
An interconnection structure, which comprises a semiconductor die having a surface and a plurality of conductive contact bumps on the surface of said semiconductor die and extending above the surface, a like plurality of conductive interconnection leads having a principal portion with a surface facing toward the surface of said semiconductor die, said like plurality of conductive interconnection leads having tips of increased thickness which project beyond the surface of said like plurality of conductive interconnection leads toward said plurality of conductive contact bumps, said plurality of contact bumps being of the same material as the tips of increased thickness, or said plurality of conductive contact bumps being formed from a ductile material having a first hardness, said like plurality of conductive interconnection leads having at least their tips formed from a material having a second hardness greater than the first hardness and the tips of said like plurality of conductive interconnection leads being bonded with each tip penetrating into its associated one of said plurality of conductive contact bumps, the tips of one of said like plurality of conductive interconnection leads each being bonded to one of said plurality of conductive contact bumps.
Claim 3
Dependent Claim
77 words
The interconnection structure of Claim 1 in which said plurality of conductive contact bumps are formed from a ductile material having a first hardness, said like plurality of conductive interconnection leads have at least their tips formed from a material having a second hardness greater than the first hardness and the tips of said like plurality of conductive interconnection leads are bonded with each tip penetrating into its associated one of said plurality of conductive contact bumps.
Claim 4
Dependent Claim
24 words
The interconnection structure of Claim 2 in which at least the tips of said like plurality of conductive interconnection leads are formed from copper.
Claim 5
Dependent Claim
18 words
The interconnection structure of Claim 3 in which said plurality of conductive contact bumps are formed from gold.
Claim 6
Dependent Claim
18 words
The interconnection structure of Claim 1 in which said plurality of conductive contact bumps are formed from gold.
Claim 7
Dependent Claim
36 words
A semiconductor device package, which comprises the interconnection structure of Claim 1 and an enclosure around at least said semiconductor die and a first portion of each of said conductive interconnection leads including the projecting tips.
Claim 8
Dependent Claim
32 words
The interconnection structure of Claim 1 in which said plurality of conductive contact bumps and at least the projecting tips of said conductive interconnection leads are formed from the same conductive material.
Claim 9
Dependent Claim
29 words
The interconnection structure of Claim 7 in which said plurality of conductive contact bumps and at least the projecting tips of said conductive interconnection leads are formed from copper.
Claim 10
Dependent Claim
227 words
A process for forming an interconnection structure, which comprises providing a semiconductor die having a surface and a plurality of conductive contact bumps on the surface of said semiconductor die and extending from the surface, providing a like plurality of conductive interconnection leads having a surface facing toward the surface of said semiconductor die, the like plurality of conductive interconnection leads having tips of increased thickness which project beyond the surface of the like plurality of conductive interconnection leads, the plurality of conductive contactbumps being of the same material as the tips of increased thickness, or said plurality of conductive contact bumps being formed from a ductile material having a first hardness, said like plurality of conductive interconnection leads having at least their tips formed from a material having a second hardness greater than the first hardness, positioning the like plurality of conductive leads with their surfaces facing toward the plurality of conductive contact bumps and the projecting tip of one of each of the like plurality of conductive leads engaging one of the plurality of contacts, urging the projecting tips of the plurality of conductive leads against the plurality of conductive contact bumps and heating the projecting tips of the plurality of conductive leads and the plurality of conductive contact bumps to form a metallurgical bond between each projecting tip and its associated conductive contact bump.
Claim 11
Dependent Claim
227 words
A process for forming an interconnection structure, which comprises providing a semiconductor die having a surface and a plurality of conductive contact bumps on the surface of said semiconductor die and extending from the surface, providing a like plurality of conductive interconnection leads having a surface facing toward the surface of said semiconductor die, the like plurality of conductive interconnection leads having tips of increased thickness which project beyond the surface of the like plurality of conductive interconnection leads, the plurality of conductive contactbumps being of the same material as the tips of increased thickness, or said plurality of conductive contact bumps being formed from a ductile material having a first hardness, said like plurality of conductive interconnection leads having at least their tips formed from a material having a second hardness greater than the first hardness, positioning the like plurality of conductive leads with their surfaces facing toward the plurality of conductive contact bumps and the projecting tip of one of each of the like plurality of conductive leads engaging one of the plurality of contacts, urging the projecting tips of the plurality of conductive leads against the plurality of conductive contact bumps and heating the projecting tips of the plurality of conductive leads and the plurality of conductive contact bumps to form a metallurgical bond between each projecting tip and its associated conductive contact bump.
Claim 12
Dependent Claim
82 words
The process of Claim 9 in which said plurality of contact bumps are formed from a ductile material having a first hardness, said conductive interconnection leads have at least their tips formed from a material having a second hardness greater than the first hardness and the projecting tips of the plurality of conductive leads are urged against the plurality of conductive contact bumps so that the projecting tips of the plurality of conductive leads penetrate into the plurality of conductive contact bumps.
Claim 13
Dependent Claim
24 words
The process of Claim 10 in which at least the projecting tips of the like plurality of conductive interconnection leads are formed from copper.
Claim 14
Dependent Claim
17 words
The process of Claim 11 in which the plurality of conductive contact bumps are formed from gold.
Claim 15
Dependent Claim
17 words
The process of Claim 10 in which said plurality of conductive contact bumps are formed from gold.
Claim 16
Dependent Claim
31 words
The process of Claim 9 in which the conductive contact bumps and at least the projecting tips of the like plurality of interconnection leads are formed from the same conductive material.
Claim 17
Dependent Claim
12 words
The process of Claim 14 in which the conductive material is copper.
References Cited (Backward Citations)
No citation records indexed.
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