EP0326996A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor integrated circuit including an effective signal level conversion circuit
Assignee: NEC Corp
•
Filing: 1989-01-30
•
Granted: —
•
Expires: 2009-01-30
Abstract
Abstract A semiconductor integrated circuit comprises a positive voltage line, a negative voltage line, a ground line, a first circuit (30) connected between the ground line and the negative voltage line so as to be driven by a voltage difference between the ground line and the negative voltage line, and a second circuit (32) connected between the ground line and the positive voltage line so as to be driven by a voltage difference between the ground line and the positive voltage line. A signal level conversion circuit includes a MOS transistor (34) having a gate connected to an output of the first circuit (30) and a drain connected through a resistor (36) to the ground line. A source of the transistor (34) is connected to the positive voltage line, and the drain of the transistor (34) is connected to an input of the second circuit (32). This transistor (34) has a threshold voltage whose absolute value is larger than an absolute value of a voltage difference between the ground line and the other of the positive voltage line.
Inventors
- 👤 Akira Denda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 19:35
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/0175; H03K19/0185; H03K19/018507
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
270 words
A semiconductor integrated circuit comprising a positive voltage line, a negative voltage line, a ground line, a first circuit connected between said ground line and one of said positive voltage line and said negative voltage line so as to be driven by a voltage difference between said ground line and said one of said positive voltage line and said negative voltage line, a second circuit connected between said ground line and the other of said positive voltage line and said negative voltage line so as to be driven by a voltage difference between said ground line and said other of said positive voltage line and said negative voltage line, and a signal level conversion circuit including a MOS transistor having a gate connected to an output of the first circuit and a drain connected through a resistor to said ground line, a source of said transistor being connected to said other of said positive voltage line and said negative voltage line, said drain of said transistor being connected to an input of said second circuit, said transistor having its threshold voltage whose absolute value is larger than an absolute value of a voltage difference between said ground line and the other of said positive voltage line and said negative voltage line, so that a signal which appears at said output of said first circuit and whose potential varies between said ground line and said one of said positive voltage line and said negative voltage line, is converted into a signal whose potential varies between said ground line and said other of said positive voltage line and said negative voltage line.
Claim 2
Dependent Claim
270 words
A semiconductor integrated circuit comprising a positive voltage line, a negative voltage line, a ground line, a first circuit connected between said ground line and one of said positive voltage line and said negative voltage line so as to be driven by a voltage difference between said ground line and said one of said positive voltage line and said negative voltage line, a second circuit connected between said ground line and the other of said positive voltage line and said negative voltage line so as to be driven by a voltage difference between said ground line and said other of said positive voltage line and said negative voltage line, and a signal level conversion circuit including a MOS transistor having a gate connected to an output of the first circuit and a drain connected through a resistor to said ground line, a source of said transistor being connected to said other of said positive voltage line and said negative voltage line, said drain of said transistor being connected to an input of said second circuit, said transistor having its threshold voltage whose absolute value is larger than an absolute value of a voltage difference between said ground line and the other of said positive voltage line and said negative voltage line, so that a signal which appears at said output of said first circuit and whose potential varies between said ground line and said one of said positive voltage line and said negative voltage line, is converted into a signal whose potential varies between said ground line and said other of said positive voltage line and said negative voltage line.
Claim 3
Dependent Claim
59 words
A circuit claimed in Claim 1 wherein said transistor has its threshold voltage whose absolute value is substantially equal to a sum of said absolute value of said voltage difference between said ground line and the other of said positive voltage line and said negative voltage line, and an absolute value of a threshold voltage of said first circuit.
Claim 4
Dependent Claim
169 words
A circuit claimed in Claim 1 wherein said first circuit is composed of an ECL circuit connected between said ground line and said negative voltage line so as to be driven by a voltage difference between said ground line and said negative voltage line, and said second circuit is composed of a TTL circuit connected between said ground line and said positive voltage line so as to be driven by a voltage difference between said ground line and said positive voltage line, and wherein said MOS transistor is of a p-channel type whose source is connected to said positive voltage line, said p-channel MOS transistor having its threshold voltage whose absolute value is larger than an absolute value of a voltage difference between said ground line and said positive voltage line, so that an output signal of said ECL circuit whose potential varies between said ground line and said negative voltage line, is converted into a signal whose potential varies between said ground line and said positive voltage line.
Claim 5
Dependent Claim
51 words
A circuit claimed in Claim 3 wherein said transistor has its threshold voltage whose absolute value is substantially equal to a sum of said absolute value of said voltage difference between said ground line and said positive voltage line, and an absolute value of a threshold voltage of said ECL circuit.
Claim 6
Dependent Claim
169 words
A circuit claimed in Claim 1 wherein said first circuit is composed of a TTL circuit connected between said ground line and said positive voltage line so as to be driven by a voltage difference between said ground line and said positive voltage line, and said second circuit is composed of an ECL circuit connected between said ground line and said negative voltage line so as to be driven by a voltage difference between said ground line and said negative voltage line, and wherein said MOS transistor is of a n-channel type whose source is connected to said negative voltage line, said n-channel MOS transistor having its threshold voltage whose absolute value is larger than an absolute value of a voltage difference between said ground line and said negative voltage line, so that an output signal of said TTL circuit whose potential varies between said ground line and said positive voltage line, is converted into a signal whose potential varies between said ground line and said negative voltage line.
Claim 7
Dependent Claim
51 words
A circuit claimed in Claim 5 wherein said transistor has its threshold voltage whose absolute value is substantially equal to a sum of said absolute value of said voltage difference between said ground line and said negative voltage line, and an absolute value of a threshold voltage of said TTL circuit.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.