EP0326956A2
Expired / Lapsed
EP
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Method for connecting devices on an integrated circuit substrate to a metallization layer
Assignee: National Semiconductor Corp
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Filing: 1989-01-27
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Granted: —
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Expires: 2009-01-27
Abstract
Abstract A method for connecting devices on an integrated circuit substrate to a metallization layer, wherein a thin layer of a dielectric material is deposited on the substrate, and openings are formed in the dielectric layer wherein electrical connection is to be made to the substrate. A metal barrier layer then is deposited selectively in the openings of the dielectric layer, the barrier layer completely covering the exposed portions of the substrate. A pillar metal layer then may be deposited as a blanket coating over the dielectric layer and over the portions of he barrier layer covering the exposed portions of the substrate. The pillar metal layer is etched for forming metal pillars extending from the exposed portions of the substrate. The substrate then is planarized by depositing a dielectric layer and etching it back for exposing the pillars for coupling to a later deposited metallization layer.
Inventors
- 👤 Vivek D. Kulkarni
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 19:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
76 words
A method for connecting devices on an integrated circuit substrate to a metallization layer comprising the steps of: depositing a thin layer of a dielectric material over the substrate; defining openings in the dielectric layer for exposing portions of the substrate where an electrical connection is to be made to the substrate; and depositing a metal barrier layer on the exposed portions of the substrate, the barrier layer completely covering the exposed portions of the substrate.
Claim 2
Independent Claim
76 words
A method for connecting devices on an integrated circuit substrate to a metallization layer comprising the steps of: depositing a thin layer of a dielectric material over the substrate; defining openings in the dielectric layer for exposing portions of the substrate where an electrical connection is to be made to the substrate; and depositing a metal barrier layer on the exposed portions of the substrate, the barrier layer completely covering the exposed portions of the substrate.
Claim 3
Dependent Claim
70 words
The method of claim 1 comprising the further steps of: depositing a thick dielectric layer over the substrate; defining openings in the thick dielectric layer for exposing portions of the barrier layer where an electrical connection is to be made to the substrate; depositing a metal contact layer over the substrate; and etching the metal contact layer for forming electrically conductive paths contacting the exposed portions of the barrier layer.
Claim 4
Independent Claim
93 words
A method for connecting devices on an integrated circuit substrate to a metallization layer comprising the steps of: depositing a thin layer of a dielectric material over the substrate; defining openings in the dielectric layer for exposing portions of the substrate where an electrical connection is to be made to the substrate; depositing a pillar metal layer over the dielectric layer and over the exposed portions of the substrate; etching the pillar metal layer for forming pillars extending from the exposed portions of the substrate; and coupling the pillars to the metallization layer.
Claim 5
Independent Claim
93 words
A method for connecting devices on an integrated circuit substrate to a metallization layer comprising the steps of: depositing a thin layer of a dielectric material over the substrate; defining openings in the dielectric layer for exposing portions of the substrate where an electrical connection is to be made to the substrate; depositing a pillar metal layer over the dielectric layer and over the exposed portions of the substrate; etching the pillar metal layer for forming pillars extending from the exposed portions of the substrate; and coupling the pillars to the metallization layer.
Claim 6
Independent Claim
45 words
The method of one of claims 1-3 wherein the thin dielectric layer depositing step comprises the step of: depositing a layer of silicon dioxide on the substrate, the silicon dioxide layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms.
Claim 7
Independent Claim
46 words
The method of one of claims 1-3 wherein the thin dielectric layer depositing step comprises the step of: depositing a layer of phosphorous-doped silicon dioxide on the substrate, the silicon dioxide layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms.
Claim 8
Independent Claim
45 words
The method of one of claims 1-3 wherein the thin dielectric layer depositing step comprises the step of: depositing a layer of silicon nitride on the substrate, the silicon nitride layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms.
Claim 9
Dependent Claim
62 words
The method of claim 3 wherein the thin dielectric layer depositing step comprises the step of depositing a layer of silicon dioxide on the substrate, the silicon dioxide layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms, the method further comprising the step of: depositing a metal barrier layer on the exposed portions of the substrate.
Claim 10
Dependent Claim
63 words
The method of claim 1 or 2 wherein the thin dielectric layer depositing step comprises the step of depositing a layer of silicon dioxide on the substrate, the silicon dioxide layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms, wherein the barrier layer is deposited on the exposed portions of the substrate by selective chemical vapor deposition.
Claim 11
Dependent Claim
17 words
The method of claim 4 wherein a layer of undoped silicon dioxide is deposited on the substrate.
Claim 12
Dependent Claim
57 words
The method of claim 7 or 8 wherein the opening defining step comprises the steps of: depositing a photoresist layer on the dielectric layer; developing openings in the photoresist layer for exposing portions of the dielectric layer where the openings are to be defined in the dielectric layer; and etching the exposed portions of the dielectric layer.
Claim 13
Dependent Claim
96 words
The method of claim 8 wherein the opening defining step comprises the steps of: depositing a photoresist layer on the dielectric layer; developing openings in the photoresist layer for exposing portions of the dielectric layer where the openings are to be defined in the dielectric layer; and etching the exposed portions of the dielectric layer, and wherein the barrier layer depositing step comprises the steps of: depositing the barrier layer on the photoresist layer and on the exposed portions of the substrate; and removing the photoresist layer and the portions of the barrier layer deposited thereon.
Claim 14
Dependent Claim
42 words
The method of claim 7 wherein the barrier layer depositing step comprises the step of: depositing the barrier layer on the photoresist layer and on the exposed portions of the substrate, the barrier layer completely covering the exposed portions of the substrate.
Claim 15
Dependent Claim
22 words
The method of claim 12 further comprising the step of: removing the photoresist layer prior to the pillar metal layer depositing step.
Claim 16
Dependent Claim
47 words
The method of claim 13 wherein the pillar metal layer etching step comprises the step of: etching the pillar metal layer to the dielectric layer for forming metal pillars contacting the exposed portions of the substrate and extending generally perpendicularly from the exposed portions of the substrate.
Claim 17
Dependent Claim
39 words
The method of claim 14 wherein the pillar metal layer etching step further comprises the step of: etching the pillar metal layer for exposing the entire dielectric layer except any portion of the dielectric layer covered by a pillar.
Claim 18
Dependent Claim
64 words
The method of claim 2 wherein the thin dielectric layer depositing step comprises the step of: depositing a layer of silicon dioxide on the substrate, the silicon dioxide layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms; and wherein the thick dielectric layer depositing step comprises the step of depositing a layer of a polyimide over the substrate.
Claim 19
Dependent Claim
62 words
The method of claim 2 wherein the thin dielectric layer depositing step comprises the step of: depositing a layer of silicon dioxide on the substrate, the silicon dioxide layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms; and wherein the thick dielectric layer depositing step comprises the step of depositing a spin-on glass over the substrate.
Claim 20
Dependent Claim
61 words
The method of claim 2 wherein the thin dielectric layer depositing step comprises the step of: depositing a layer of silicon dioxide on the substrate, the silicon dioxide layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms; and further comprising the step of planarizing the thick dielectric layer prior to depositing the metal contact layer.
Claim 21
Dependent Claim
41 words
The method of claim 18 wherein the planarizing step comprises the step of: spinning a sacrificial layer of photoresist over the thick dielectric layer; and etching back the sacrificial photoresist layer and the thick dielectric layer for forming a planar surface.
Claim 22
Dependent Claim
88 words
The method of claim 2 wherein the thin dielectric layer depositing step comprises the step of: depositing a layer of silicon dioxide on the substrate, the silicon dioxide layer having a thickness in the range from approximately 1000 angstroms to approximately 2000 angstroms; and wherein the metal contact layer depositing step comprises the step of depositing the metal contact layer as a continuous layer extending over the thick dielectric layer, into the openings defined in the thick dielectric layer and contacting the exposed portions of the barrier layer.
References Cited (Backward Citations)
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