EP0325328A1
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A method of manufacturing a semiconductor device using sputter etching
Assignee: Koninklijke Philips NV
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Filing: 1989-01-16
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Granted: —
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Expires: 2009-01-16
Abstract
Abstract A method of manufacturing a semiconductor device is described in which a substrate (1) is provided having doped semiconductor regions (3 to 13) for forming at least one (two in the example shown) electrical component, at least two of the doped silicon regions having respective exposed surface areas which are doped with different dopants, (for example surface areas 10a, 11a and 6a or surface areas 8a, 9a and 7a) and metal is deposited for forming a metal silicide (15a) at each of the said exposed surface areas (7a to 11a). Prior to deposition of the metal (15) to form the metal silicide (15a), the exposed silicon surface areas are subjected to an in-situ sputter etch, which facilitates formation of the metal silicide (15a).
Inventors
- 👤 Aleida Antonetta Bos-Cliteur
- 👤 Alexander Gijsbertus Mathias Jonkers
- 👤 Hendrikus Josephus Wilhelmus Van Houtum
- 👤 Robertus Adrianus Maria Wolters
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 17:31
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P50/00; H10P50/20
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
68 words
A method of manufacturing a semiconductor device, which method comprises providing a substrate having doped semiconductor regions for forming at least one electrical component, at least one of the doped silicon regions having an exposed surface areas, and depositing metal for forming a metal silicide at the exposed surface area characterised by sputter etching the exposed surface area prior to depositing the metal to form the metal silicide.
Claim 2
Independent Claim
68 words
A method of manufacturing a semiconductor device, which method comprises providing a substrate having doped semiconductor regions for forming at least one electrical component, at least one of the doped silicon regions having an exposed surface areas, and depositing metal for forming a metal silicide at the exposed surface area characterised by sputter etching the exposed surface area prior to depositing the metal to form the metal silicide.
Claim 3
Independent Claim
78 words
A method of manufacturing a semiconductor device, which method comprises providing a substrate having doped semiconductor regions for forming at least one electrical component, at least two of the doped silicon regions having respective exposed surface areas which are formed of different types of silicon, and depositing metal for forming a metal silicide at each of the exposed surface areas, characterised by sputter etching the exposed surface areas prior to depositing the metal to form the metal silicide.
Claim 4
Independent Claim
78 words
A method of manufacturing a semiconductor device, which method comprises providing a substrate having doped semiconductor regions for forming at least one electrical component, at least two of the doped silicon regions having respective exposed surface areas which are formed of different types of silicon, and depositing metal for forming a metal silicide at each of the exposed surface areas, characterised by sputter etching the exposed surface areas prior to depositing the metal to form the metal silicide.
Claim 5
Dependent Claim
28 words
A method according to Claim 2, which comprises providing the substrate so that the exposed surface areas of the two doped regions are doped with the same dopant.
Claim 6
Dependent Claim
29 words
A method according to Claim 2 or 3 which comprises providing the substrate so that the exposed surface areas of the two doped regions are doped with different dopants.
Claim 7
Dependent Claim
27 words
A method according to Claim 4, which comprises providing the substrate so that the exposed surface areas of the two doped regions are of opposite conductivity types.
Claim 8
Dependent Claim
53 words
A method according to claim 2, 3, 4 or 5, which comprises providing the substrate so that the exposed surface area of one of the two doped silicon regions is formed of monocrystalline silicon and the exposed surface area of the other of the two doped silicon regions is formed of polycrystalline silicon.
Claim 9
Independent Claim
133 words
A method according to any one of Claims 2 to 6, wherein the step of providing the substrate having doped silicon regions comprises providing a monocrystalline silicon well of one conductivity type adjacent a given surface of the substrate, depositing a doped polycrystalline silicon region on an insulatinglayer on the said surface to define an insulated gate over the well, introducing impurities using the insulated gate as a mask to define source and drain regions of the opposite conductivity type within the well, providing an insulating layer on the said given surface and etching the insulating layer anisotropically so as to expose surface areas of the source and drain regions and of the polycrystalline silicon region of the insulated gate whilst leaving spacers of insulating material on side walls of the insulated gate.
Claim 10
Independent Claim
169 words
A method according to any one of claims 2 to 6, wherein the step of providing the substrate having doped silicon regions comprises providing first and second monocrystalline silicon wells adjacent a given surface of the substrate, the first well being of one conductivity type and the second well of the opposite conductivity type, depositing a doped polycrystalline silicon region on an insulating layer on the said surface to define a respective insulated gate over each of the first and second wells, introducing impurities using the insulated gates as masks to define source and drain regions of the opposite conductivity type within the first well and source and drain regions of the one conductivity type within the second well, providing an insulating layer on the said given surface and etching the insulating layer anisotropically so as to expose surface areas of the source and drain regions and of the polycrystalline silicon regions of the insulated gates whilst leaving spacers of insulating material on side walls of the insulated gates.
Claim 11
Dependent Claim
23 words
A method according to Claim 6, 7 or 8, wherein the or each exposed surface polycrystalline silicon surface area is doped with phosphorus.
Claim 12
Independent Claim
38 words
A method according to any one of the preceding claims, which comprises using ions of an inert gas with an energy in the region of from 30ev to 200ev (electron volts) to sputter etch the exposed surface area(s).
Claim 13
Dependent Claim
16 words
A method according to Claim 10, which comprises using argon ions as the inert gas ions.
Claim 14
Independent Claim
33 words
A method according to any one of the preceding claims, which comprises depositing as the metal for forming the metal silicide a metal selected from the group consisting of platinum, cobalt and titanium.
Claim 15
Dependent Claim
26 words
A method according to Claim 12, which comprises depositing titanium as the metal for forming the metal silicide whilst maintaining the substrate in a nitrogen-containing atmosphere.
References Cited (Backward Citations)
US4585517A
Cited
EP0203836A1
Cited
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