EP0323345A2 — A semiconductor substrate having a superconductin…

Claim 1

Independent Claim 47 words

A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material is interposed between the silicon substrate and the superconducting thin film layer.

Claim 2

Dependent Claim 47 words

A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material is interposed between the silicon substrate and the superconducting thin film layer.

Claim 3

Dependent Claim 34 words

A semiconductor substrate set forth in Claim 1, characterized in that said compound semiconductor material is selected from a group comprising SiC, GaAs, GaP, InP, InSb, ZnSe, CdTe, HgCdTe, GaAlAs, GaInAs, InAlAs and InGaAsP.

Claim 4

Dependent Claim 73 words

A semiconductor substrate set forth in Claim 1 or 2, characterized in that said superconducting thin film layer is composed of a compound oxide of at least one element α selected from IIa group of the Periodic Table, at least one element β selected from IIIa group of the Periodic Table and at least one element γ selected from a group comprising Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table.

Claim 5

Dependent Claim 110 words

A semiconductor substrate set forth in Claim 3, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: (α 1-x β x )γ y O z in which α, β and γ have the same definition as above, x is an atomic ratio of β with respect to (α+β) and has a range of 0.1 ≦ x ≦ 0.9, and y and z are respective atomic ratios with respect to (α 1-x β x ) which is considered to be equal to 1 and each satisfies ranges of 0.4 ≦ y ≦ 3.0 and 1 ≦ z ≦ 5 respectively.

Claim 6

Dependent Claim 40 words

A semiconductor substrate set forth in Claim 4, characterized in that said superconducting thin film layer is composed of a compound oxide represented by the general formula: (La 1-x α x )₂CuO₄ in which α stands for Ba or Sr.

Claim 7

Dependent Claim 36 words

A semiconductor substrate set forth in any one of Claim 3 to 5, characterized in that said superconducting thin film layer is composed of an oxide having perovskite type or oxygen deficient perovskite type crystalline structure.

Claim 8

Dependent Claim 72 words

A semiconductor substrate set forth in Claim 3, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Ln₁Ba₂Cu₃O 7-δ in which Ln stands for at least one lanthanide element selected from a group comprising La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Yb, Tm and Lu and δ is a number which satisfies a range of 0≦ δ < 1.

Claim 9

Dependent Claim 19 words

A semiconductor substrate set forth in Claim 7, characterized in that the Ln is Y, Er, Ho or Dy.

Claim 10

Dependent Claim 36 words

A semiconductor substrate set forth in Claim 7 or 8, characterized in that said compound oxide contain further at least one of element selected from a group comprising Al, Fe, Co, Ni, Zn, Ag and Ti.

Claim 11

Dependent Claim 117 words

A semiconductor substrate set forth in Claim 3, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Θ₄(Φ 1-q , Ca q ) m Cu n O p+r in which Θ stands for Bi or Tl, Φ stands for Sr when Θ is Bi and stands for Ba when Θ is Tl, m and n are numbers each satisfying ranges of 6 ≦ m ≦ 10 and 4 ≦ n ≦ 8 respectively, p = (6+m+n), q is a number which satisfies a range of 0 < q < 1, and r is a number which satisfies a range of -2 ≦ r ≦ + 2.

Claim 12

Dependent Claim 91 words

A process for producing a semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide and stratified on the silicon substrate through an intermediate semiconductor layer composed of compound semiconductor material which is interposed between the silicon substrate and the superconducting thin film layer, characterized in that said intermediate semiconductor layer is deposited on the silicon substrate by chemical vapour deposition techniques, while said superconducting thin film layer is deposited on the intermediate semiconductor layer by physical vapour deposition technique or chemical vapour deposition technique.

Claim 13

Dependent Claim 91 words

A process for producing a semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide and stratified on the silicon substrate through an intermediate semiconductor layer composed of compound semiconductor material which is interposed between the silicon substrate and the superconducting thin film layer, characterized in that said intermediate semiconductor layer is deposited on the silicon substrate by chemical vapour deposition techniques, while said superconducting thin film layer is deposited on the intermediate semiconductor layer by physical vapour deposition technique or chemical vapour deposition technique.

Claim 14

Dependent Claim 17 words

A process set forth in Claim 11, characterized in that said physical vapour deposition technique is sputtering.

Claim 15

Dependent Claim 72 words

A process set forth in Claim 11 or 12, characterized in that said superconducting thin film layer is composed of a compound oxide of at least one element α selected from IIa group of the Periodic Table, at least one element β selected from IIIa group of the Periodic Table and at least one element γ selected from a group comprising Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table.

Claim 16

Dependent Claim 40 words

A process set forth in Claim 13, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: (La 1-x α x )₂CuO₄ in which α stands for Ba or Sr.

Claim 17

Dependent Claim 72 words

A process set forth in Claim 13, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Ln₁Ba₂Cu₃O 7-δ in which Ln stands for at least one lanthanide element selected from a group comprising La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Yb, Tm and Lu and δ is a number which satisfies a range of 0 ≦ δ < 1.

Claim 18

Dependent Claim 115 words

A process set forth in Claim 13, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Θ₄(Φ 1-q , Ca q ) m Cu n O p+r in which Θ stands for Bi or Tl, Φ stands for Sr when Θ is Bi and stands for Ba when Θ is Tl, m and n are numbers each satisfying ranges of 6 ≦ m ≦ 10 and 4 ≦ n ≦ 8 respectively, p = (6+m+n), q is a number which satisfies a range of 0 < q < 1, and r is a number which satisfies a range of -2 ≦ r ≦ +2.

Claim 19

Dependent Claim 38 words

A process set forth in any one of Claim 11 to 18, characterized in that said intermediate semiconductor material is selected from a group comprising SiC, GaAs, GaP, InP, InSb, ZnSe, CdTe, HgCdTe, GaAlAs, GaInAs, InAlAs and InGaAsP.

A semiconductor substrate having a superconducting thin film

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