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EP0321239A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Fabricating method of semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1988-12-15
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Granted: —
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Expires: 2008-12-15
Abstract
Abstract This invention relates to mounting of LSI chip (3 of multiple electrodes and narrow pitch such as gate array and microcomputer. In a semiconductor device having an LSI chip with bump electrode (36) affixed to a wiring board (32) by means of insulation resin (34), and the bump electrode of the LSI chip electrically connected by the contact between the wiring board and conductor wiring (30), by mounting with the bump electrode in a state of elastic deformation, both heat resistance and productivity are enhanced, and a semiconductor device of high reliability and low cost is obtained.
Inventors
- 👤 Hiroaki Fujimoto
- 👤 Kenzo Hatada
- 👤 Takeo Ochi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 09:21
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/012; H10W72/00; H10W72/30; H10W74/10; H10W74/15; H10W72/071; H10W72/073; H10W72/851; H10W72/853; H10W72/856; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
102 words
A frabricating method of semiconductor device comprising: a step of applying an insulating resin to a conductor wiring part of an insulation substrate having the conductor wiring; a step of matching the conductor wiring and the electrode of the semiconductor device, pressing the semiconductor device to the applied region of the insulating resin of the insualtion substrate, and connecting the conductor wiring in the state of elastic deformation of the semiconductor device, and a step of stiffening the insulating resin and affixing the semiconductor device to the insulation substrate, while electrically connecting the conductor wiring and the electrode of the semiconductor device.
Claim 2
Dependent Claim
102 words
A frabricating method of semiconductor device comprising: a step of applying an insulating resin to a conductor wiring part of an insulation substrate having the conductor wiring; a step of matching the conductor wiring and the electrode of the semiconductor device, pressing the semiconductor device to the applied region of the insulating resin of the insualtion substrate, and connecting the conductor wiring in the state of elastic deformation of the semiconductor device, and a step of stiffening the insulating resin and affixing the semiconductor device to the insulation substrate, while electrically connecting the conductor wiring and the electrode of the semiconductor device.
Claim 3
Dependent Claim
21 words
A fabricating method of semiconductor device according to claim 1, wherein the electrode of the semiconductor device is a bump electrode.
Claim 4
Dependent Claim
110 words
A fabricating method of semiconductor device comprising: a step of applying an insulating resin to a conductor wiring part of an insulation substrate having the conductor wiring; a step of matching the conductor wiring with the electrode of the semiconductor device, pressing the semiconductor device to the applied region of the insulating resin of the insulation substrate, and contacting the electrode of the semiconductor device with the conductor wiring; and a step of stiffening the insulating resin by irradiating with ultraviolet rays and heating at the same time to affix the semiconductor device to the insulation substrate, and electrically connecting the conductor wiring and the electrode of the semiconductor device.
Claim 5
Dependent Claim
110 words
A fabricating method of semiconductor device comprising: a step of applying an insulating resin to a conductor wiring part of an insulation substrate having the conductor wiring; a step of matching the conductor wiring with the electrode of the semiconductor device, pressing the semiconductor device to the applied region of the insulating resin of the insulation substrate, and contacting the electrode of the semiconductor device with the conductor wiring; and a step of stiffening the insulating resin by irradiating with ultraviolet rays and heating at the same time to affix the semiconductor device to the insulation substrate, and electrically connecting the conductor wiring and the electrode of the semiconductor device.
Claim 6
Dependent Claim
116 words
A fabricating method of semiconductor device comprising: a step of applying an insulating resin to a conductor wiring part of an insulation substrate having the conductor wiring; a step of matching the conductor wiring with the electrode of the semiconductor device, pressing the semiconductor device to the applied region of the insulating resin of the insulation substrate, and contacting the conductor wiring with the electrode of the semiconductor device kept in an elastically deformed state; and a step of stiffening the insulation resin by irradiating with ultraviolet rays and heating at the same time to affix the semiconductor device to the insulation substrate, while electrically connecting the conductor wiring and the electrode of the semiconductor device.
Claim 7
Dependent Claim
116 words
A fabricating method of semiconductor device comprising: a step of applying an insulating resin to a conductor wiring part of an insulation substrate having the conductor wiring; a step of matching the conductor wiring with the electrode of the semiconductor device, pressing the semiconductor device to the applied region of the insulating resin of the insulation substrate, and contacting the conductor wiring with the electrode of the semiconductor device kept in an elastically deformed state; and a step of stiffening the insulation resin by irradiating with ultraviolet rays and heating at the same time to affix the semiconductor device to the insulation substrate, while electrically connecting the conductor wiring and the electrode of the semiconductor device.
References Cited (Backward Citations)
No citation records indexed.
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