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EP0321226A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Intermediate potential generation circuit for generating a potential intermediate between a power source potential and ground potential

Assignee: Toshiba Corp
•
Filing: 1988-12-14
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Granted: —
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Expires: 2008-12-14
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Abstract

Abstract An intermediate potential generation circuit for outputting an intermediate potential (VM) intermediate between a power source potential (VCC) and ground potential, including a reference potential generator circuit (40) for generating first and second reference potentials (VN7, VN8), and a comparator circuit (41) for comparing the intermediate output with the first and second reference potentials. When the intermediate output potential is lower than the first reference potential, the comparator circuit outputs a first control signal at the level of the power source potential to a first MOS transistor (M9) supplied with the power source potential (VCC) to raise the intermediate output potential level. When the output intermediate potential is higher than the second reference potential, the comparator circuit outputs a second control signal at the level of the power source potential level to a second MOS transistor (M10) supplied with ground potential to lower the intermediate output potential.

Inventors

  • 👤 Takashi Ohsawa

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 17:03
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/147; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/461; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 182 words
In an intermediate potential generation circuit for outputting at an output node (14,16, 18, 20, 23) an intermediate potential (VM) intermediate between a first power source potential (VCC, GND) and a second power source potential, the improvement which comprises: reference potential generating means (40,50) for generating first and second reference potentials responsive to the first and second power source potentials, wherein the first reference potential is lower than the second reference potential; comparing means (41,42, 43, 44, 51) responsive to the fist reference potential, the second reference potential and the intermediate potential for producing first control signal when the intermediate potential is lower than the first reference potential, and for producing second control signal when the intermediate potential is higher than the second reference potential; first circuit means (M9,M15) having an output connected to said output node and an input responsive to the fist control signal for raising the intermediate potential and second circuit means (M10,M22) having an output connected to said output node and an input responsive to the second control signal for lowering the intermediate potential at said output node.
Claim 2
Dependent Claim 182 words
In an intermediate potential generation circuit for outputting at an output node (14,16, 18, 20, 23) an intermediate potential (VM) intermediate between a first power source potential (VCC, GND) and a second power source potential, the improvement which comprises: reference potential generating means (40,50) for generating first and second reference potentials responsive to the first and second power source potentials, wherein the first reference potential is lower than the second reference potential; comparing means (41,42, 43, 44, 51) responsive to the fist reference potential, the second reference potential and the intermediate potential for producing first control signal when the intermediate potential is lower than the first reference potential, and for producing second control signal when the intermediate potential is higher than the second reference potential; first circuit means (M9,M15) having an output connected to said output node and an input responsive to the fist control signal for raising the intermediate potential and second circuit means (M10,M22) having an output connected to said output node and an input responsive to the second control signal for lowering the intermediate potential at said output node.
Claim 3
Dependent Claim 53 words
The intermediate potential generation circuit of claim 1, wherein the potential difference across the input and the output of respective of said first and second output circuit means upon production of respective of said first and second control signals is the difference between one of said power source potentials and said intermediate potential.
Claim 4
Dependent Claim 72 words
The intermediate potential generation circuit of claim 1, wherein the comparing means (41, 42, 43, 44, 51) comprises: first and second comparators (CMP1, CMP2, CMP3, CMP6) responsive to the power source potential, wherein the first comparator outputs the first control signal in response to the first reference potential and the intermediate potential, and the second comparator outputs the second control signal in response to the second reference potential and the intermediate potential.
Claim 5
Dependent Claim 54 words
The intermediate potential generation circuit of claim 1, wherein the first and the second circuit means each includes a P -channel MOS transistor (M9, M10) having a gate electrode supplied with a respective of the first and second control signals and a selected of a drain and a source connected to said output node.
Claim 6
Dependent Claim 59 words
The intermediate potential generation circuit according to claim 4, wherein tbe gate to source potential of the P -channel MOS transistors of said first and second circuit means upon application of respective of said fist and second control signals to said P -channel MOS transistors is the diffetence beteween one of said power source potentials and said intermediate potential.
Claim 7
Dependent Claim 316 words
The intermediate potential genetration circuit of claim 1, wherein the reference potential generating means comprising: a first path between the first power source potential and second power source potential, including; a first resistor (R6) having a first end supplied with the first power source potential, and a second end, a first MOS transistor (M5) of first conductivity type having a gate electrode and a drain electrode connected to the other end of the first resistor, and a source electrode, a second MOS transistor (M6) of a second conductivity type, having a source electrode connected to the source electrode of the first MOS transistor, and a gate electrode and a drain electrode connected in common, and a second resistor (R7) having a first end connected to the common connection of the gate and the drain electrodes of the second MOS transistor, and a second end supplied with the second power source potential, a second path between the first power source potential and the second power source potential, including; a third MOS transitor (M7) of first conductivity having a drain electrode supplied with the first power source potential, and a gate electrode connected to the drain electrode of the first MOS transistor, and a source electode, and a third resistor (R8) having a first end connected to the source electrode of the third MOS transistor, and a second end supplied with the second power source potential, and a third path between the first power source potential and the second power source potential, including; a fourth resistor (R9) having first end supplied with the first power source potential, and a second end, and a fourth MOS transistor (M8) of second conductivity type having a gate electrode connected to the drain electrode of the second MOS transistor, a source electrode connected to the second end of the fourth resistor and a drain electrode supplied with the second power source potential.
Claim 8
Dependent Claim 58 words
The intermediate potential generation circuit of claim 3, wherein the first comparator has a non-inverting input terminal supplied with the first reference potential and an inverting input terminal supplied with the intermediate potential, and the second comparator has an inverting input terminal supplied with the second reference potential, and a non-inverting input terminal supplied with the intermediate potential.
Claim 9
Dependent Claim 58 words
The intermediate potential generation circuit of claim 3, wherein the first comparator has an inverting input terminal supplied with the first reference potential and a non-inverting input terminal supplied with the intermediate potential, and the second comparator has an inverting input terminal supplied with the second reference potential and a non-inverting input terminal supplied with the intermediate potential.
Claim 10
Dependent Claim 60 words
The intermediate potential generation circuit of claim 3, wherein the first comparator (CMP1) has a non-­inverting input terminal supplied with the first reference potential and an inverting input terminal supplied with the intermediate potential, and the second comparator (CMP2) has a non-inverting input terminal supplied with the second refence potential and an inverting input terminal supplied with the intermediate potential.
Claim 11
Dependent Claim 60 words
The intermediate potential generation circuit of claim 3, wherein the first comparator (CMP3) has an inverting input terminal supplied with the first reference potential, and a non-inverting input terminal supplied with the intermediate potential, and the second comparator (CMP6) has a non-inverting input terminal supplied with the second reference potential and an inverting input terminal supplied with the intermediate potential.
Claim 12
Dependent Claim 34 words
The intermediate potential generation circuit of claim 3, wherein the reference potential generating means includes a plurality of resistors (R22, R23, R24, R25) connected in series between the first and second power source potentials.

References Cited (Backward Citations)

EP0205104A2 Cited
GB2180710A Cited

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