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EP0320110A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Memory device comprising a resonant-tunneling semiconductor diode and mode of operation

Assignee: AT&T Inc
•
Filing: 1988-11-03
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Granted: —
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Expires: 2008-11-03
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Abstract

Abstract A memory bistable cell well suited for integration in memory integrated circuits, comprising a voltage source, a load resistor and a resonant-tunneling semiconductor diode (in lieu of two-transistor flip-flop). A device comprising an InAlAs-InGaAs-InAlAs single quantum well resonant-tunneling structure formed between an InP-InGaAs substrate/buffer structure and an InGaAs cap layer. An undoped InGaAs layer is further formed between the resonant-tunneling structure and the cap layer in order to accelerate the emitted carriers and provide more gradual current peaks. The device can be operated at temperatures greater than look, and in particular at or near room temperature. A three terminal resonant-tunneling composite structure is further disclosed.

Inventors

  • 👤 Federico Capasso
  • 👤 Alfred Yi Cho
  • 👤 Susanta Sen

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-06 17:01
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/70; H10D8/755; B; B82; B82Y; B82Y10/00; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/36; G11C11/38; G11C11/56; H03; H03B; H03B19/00; H03B19/16; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362; H10D62/00; H10D62/80; H10D62/81; H10D62/812; G11C2211/00; G11C2211/56; G11C2211/561; G11C2211/5614; Y; Y10; Y10S; Y10S257/00; Y10S257/926

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 26 words
A device comprising a memory cell having two stable states, said memory cell comprising, in series, a voltage source, a resonant-tunneling diode, and a resistor element.
Claim 2
Independent Claim 26 words
A device comprising a memory cell having two stable states, said memory cell comprising, in series, a voltage source, a resonant-tunneling diode, and a resistor element.
Claim 3
Independent Claim 29 words
A method for operating a resonant-tunneling device, said device comprising an InAlAs-InGaAs-InAlAs resonant-tunneling structure, and operation of said device being at temperature which is greater than 100 degrees K.
Claim 4
Independent Claim 29 words
A method for operating a resonant-tunneling device, said device comprising an InAlAs-InGaAs-InAlAs resonant-tunneling structure, and operation of said device being at temperature which is greater than 100 degrees K.
Claim 5
Dependent Claim 15 words
The method of claim 2, operation of said device being at or near room temperature.

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