EP0319907A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Light emitting diode array chip and method of fabricating the same
Assignee: Hitachi Cable Ltd
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Filing: 1988-12-06
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Granted: —
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Expires: 2008-12-06
Abstract
Abstract A LED array chip (6/26/46) comprising: a first semiconductor layer (16) having a p-type conduction; a second semiconductor layer (17) having a n-type conduction possessing a forbidden band width smaller than the first layer (16) and provided on the first layer (16), so as to form a semiconductor chip having a pn junction (8) at the interface with the first layer (16); the second layer (17) being divided into a first region (A) and a second region (B) by etching the second layer (17) until the pn junction (8), the first region (A) thereof being divided to form individual plural LEDs (22) of predetermined configuration, and the n-type layer (17) in the second region (B) being converted to the p-type layer as so to serve as a common region (13); individual electrodes (18) respectively provided to the surfaces of the LEDs (22); and a common electrode (19) provided to the common region (13), parts of the exposed surface of the p-type layer (16) corresponding to the LEDs ( 22) serving as light emitting surfaces (10). The LED array chip (6/26/46) is mounted on a printed circuit board (1) by directly bonding the individual electroeds (18 ) and the common electroed (19) to the corresponding terminals (7, 9) of the printed circuit (1).
Inventors
- 👤 Toshio Sagawa
- 👤 Kazuhiro Kurata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 21:38
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H10H29/14; B; B41; B41J; B41J2/00; B41J2/435; B41J2/447; B41J2/45; H10W; H10W90/00; H10H20/00; H10H20/80; H10H20/85; H10H20/855; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5522
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
207 words
A LED array chip (6/26/46) comprising: a semiconductor layer (16) (called "first layer) having a particular type (p-type) (called "first type) of conduction; another semiconductor layer (17) (called "second layer") having a type (n-type) called " second type"), of conduction opposite to the first type (n-type), possessing a forbidden band width smaller than the first layer (16) and provided on the first layer (16), so as to form a semiconductor chip (6/26/46) having a pn junction (8) at the interface with the first layer (16); the second layer (17) being divided into two regions (A, B) (called "first region" and " second region") by etching the second layer (17) until the pn junction (8), the first region (A) thereof being divided to form individual plural LEDs ( 22) of predetermined configuration, and the second layer (17) in the second region (B) being removed or converted to the first type (p-type) layer as so to serve as a common region ( 13), individual electrodes (18) respectively provided to the surfaces of the LEDs (22); and a common electrode (19) provided to the common region (13), parts of the exposed surface of the first layer ( 16 ) corresponding to the LEDs (22) serving as light emitting surfaces (10).
Claim 2
Dependent Claim
207 words
A LED array chip (6/26/46) comprising: a semiconductor layer (16) (called "first layer) having a particular type (p-type) (called "first type) of conduction; another semiconductor layer (17) (called "second layer") having a type (n-type) called " second type"), of conduction opposite to the first type (n-type), possessing a forbidden band width smaller than the first layer (16) and provided on the first layer (16), so as to form a semiconductor chip (6/26/46) having a pn junction (8) at the interface with the first layer (16); the second layer (17) being divided into two regions (A, B) (called "first region" and " second region") by etching the second layer (17) until the pn junction (8), the first region (A) thereof being divided to form individual plural LEDs ( 22) of predetermined configuration, and the second layer (17) in the second region (B) being removed or converted to the first type (p-type) layer as so to serve as a common region ( 13), individual electrodes (18) respectively provided to the surfaces of the LEDs (22); and a common electrode (19) provided to the common region (13), parts of the exposed surface of the first layer ( 16 ) corresponding to the LEDs (22) serving as light emitting surfaces (10).
Claim 3
Dependent Claim
32 words
A LED array chip (6/26/46) according to claim 1, wherein said individual electrodes (18) provided on said individual LEDs (22) are bonded directly to a circuit (2) printed on a substrate (1).
Claim 4
Dependent Claim
25 words
A LED array chip (6/26/46) according to claim 1 or 2, wherein said first layer (16) has a thickness ranging from 50 to 500 µm.
Claim 5
Dependent Claim
26 words
A LED array chip (6/26/46) according to claim 1, 2, or 3, wherein said second layer (17) has a thickness of between 1 to 30 µm.
Claim 6
Dependent Claim
32 words
A LED array chip according to one of claims 1 to 4, wherein the pitch of said individual electrodes ( 22) is substantially equal to the dot pitch of said LEDs (22).
Claim 7
Dependent Claim
32 words
A LED array chip (46) according to one of claims 1 to 5, wherein convex lenses (40) formed by resin-moding are provided on the light emitting surface (41) of the first layer.
Claim 8
Independent Claim
138 words
A method of fabricating a LED array chip (6/26/46) comprising the steps of: (C) fabricating a p-type substrate (16); (D) forming on the p-type substrate a n-type layer (17) possessing mixed crystal ratio smaller than the substrate (16), and defining a pn junction (8) at the interface with the substrate (16); (E) etching the n-type layer (17) until the pn junction (8) so as to divide the n-type layer (17) into a first region (A) and a second region (B); (F) dividing the first region (A) of the n-type layer (17) so as to form a plurality of individual LEDs (22); (G) forming a common region (13) in n-type layer (17) of the second region (B); (H) forming a common electrode (19) in the second region (B); and (I) forming individual electrodes (18) on the LEDs (22) respectively.
Claim 9
Independent Claim
138 words
A method of fabricating a LED array chip (6/26/46) comprising the steps of: (C) fabricating a p-type substrate (16); (D) forming on the p-type substrate a n-type layer (17) possessing mixed crystal ratio smaller than the substrate (16), and defining a pn junction (8) at the interface with the substrate (16); (E) etching the n-type layer (17) until the pn junction (8) so as to divide the n-type layer (17) into a first region (A) and a second region (B); (F) dividing the first region (A) of the n-type layer (17) so as to form a plurality of individual LEDs (22); (G) forming a common region (13) in n-type layer (17) of the second region (B); (H) forming a common electrode (19) in the second region (B); and (I) forming individual electrodes (18) on the LEDs (22) respectively.
Claim 10
Dependent Claim
22 words
A method of fabricating a LED array chip (6/26/46) according to claim 7, wherein the step (C) includes liquid phase epitaxial growth;
Claim 11
Dependent Claim
43 words
A method of fabricating a LED array chip (6/26/46) according to claim 7, wherein the step (G) includes diffusing Zn or ion-implanting into the n-type layer (17) of the second region (B) so as to change the n-type (17) layer to p-type layer.
Claim 12
Dependent Claim
20 words
A method of fabricating a LED array chip (6/26/46) according to claim 7, wherein the step (I) includes vapor deposition.
References Cited (Backward Citations)
No citation records indexed.
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