EP0319213A2
Expired / Lapsed
EP
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Method for fabricating semiconductor devices which include metal-containing material regions
Assignee: AT&T Inc
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Filing: 1988-11-25
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Granted: —
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Expires: 2008-11-25
Abstract
Abstract A new method for fabricating a semiconductor device, e.g., a MOS or MES IC, is disclosed. In accordance with the new method, a semiconductor device is formed, at least in part, by forming a material region (60,70) which includes metal, e.g., elemental metal or a metal-containing compound, on a semiconductor substrate(10). One or more dopants are implanted into the material region, and the substrate is heated in order to diffuse the dopants out of the material region and into the substrate, thus forming a dopant-diffused substrate region, e.g., a source or drain (100,110). The new method involves implant conditions which yield a material region-to-substrate specific contact resistance equal to or less than about 10⁻⁶Ω-cm⁻². In addition, the new method involves heating temperatures and heating times which yield a dopant-diffused substrate region having a depth, relative to the top of the material region, equal to or less than about 0.2 micrometres.
Inventors
- 👤 Ruichen Liu
- 👤 William Thomas Lynch
- 👤 David Slate Williams
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 21:49
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
218 words
A method for fabricating a device, comprising the steps of: forming a metal-containing material region (60,70) on a substrate (10) which includes underlying semiconductor material; implanting at least one dopant into said material region, said dopant being a donor in said underlying semiconductor material if said underlying semiconductor material is of p-type conductivity or an acceptor is said underlying semiconductor material is of n-type conductivity; heating said substrate to one or more temperatures for one or more corresponding time periods to diffuse said dopant out of said material region and into said substrate, thereby forming a dopant-containing region (100,110) in said substrate; and completing the fabrication of said device, CHARACTERIZED IN THAT said material region (60,70) has an average thickness, t, less than 0.2 µm, the heating temperature or temperatures and corresponding heating time or times are chosen so that the depth of said dopant-containing regions (100,110) as measured from the top of said material region (110,111), is equal to or less than about 0.2 µm, and the amount of dopant per unit area implanted into said material region, I, is chosen so that the ratio of 1 to t is equal to or greater than about one-half of the solid solubility of said dopant in said material region at the temperature or temperatures employed during said heating.
Claim 2
Independent Claim
218 words
A method for fabricating a device, comprising the steps of: forming a metal-containing material region (60,70) on a substrate (10) which includes underlying semiconductor material; implanting at least one dopant into said material region, said dopant being a donor in said underlying semiconductor material if said underlying semiconductor material is of p-type conductivity or an acceptor is said underlying semiconductor material is of n-type conductivity; heating said substrate to one or more temperatures for one or more corresponding time periods to diffuse said dopant out of said material region and into said substrate, thereby forming a dopant-containing region (100,110) in said substrate; and completing the fabrication of said device, CHARACTERIZED IN THAT said material region (60,70) has an average thickness, t, less than 0.2 µm, the heating temperature or temperatures and corresponding heating time or times are chosen so that the depth of said dopant-containing regions (100,110) as measured from the top of said material region (110,111), is equal to or less than about 0.2 µm, and the amount of dopant per unit area implanted into said material region, I, is chosen so that the ratio of 1 to t is equal to or greater than about one-half of the solid solubility of said dopant in said material region at the temperature or temperatures employed during said heating.
Claim 3
Dependent Claim
15 words
A method as claimed in claim 1 wherein said metal-containing material region includes elemental metal.
Claim 4
Dependent Claim
16 words
A method as claimed in claim 1 wherein said metal-containing material region includes a metal-containing compound.
Claim 5
Dependent Claim
15 words
A method as claimed in claim 3 wherein said metal-containing compound is a metal silicide.
Claim 6
Independent Claim
110 words
A device comprising: a semiconductor substrate (10) which includes a substrate region (100,110) having a conductivity which is opposite to that of the surrounding semiconductor material, said substrate region extending from the surface of said substrate into said substrate and having a lateral extent less than that of said surface; and a metal containing material region (60,70) contacting and overlying said substrate region CHARACTERIZED IN THAT the depth of said substrate region, as measured from the top of said material region, is equal to or less than about 0.2 µm, and the specific contact resistance of said material region to said substrate is equal to or less than about 10⁻⁶Ω-cm⁻².
Claim 7
Independent Claim
110 words
A device comprising: a semiconductor substrate (10) which includes a substrate region (100,110) having a conductivity which is opposite to that of the surrounding semiconductor material, said substrate region extending from the surface of said substrate into said substrate and having a lateral extent less than that of said surface; and a metal containing material region (60,70) contacting and overlying said substrate region CHARACTERIZED IN THAT the depth of said substrate region, as measured from the top of said material region, is equal to or less than about 0.2 µm, and the specific contact resistance of said material region to said substrate is equal to or less than about 10⁻⁶Ω-cm⁻².
Claim 8
Dependent Claim
29 words
A device as claimed in claim 5, wherein said device includes a MOSFET, and said material region and said substrate region constitute a source or drain of said MOSFET.
Claim 9
Dependent Claim
29 words
A device as claimed in claim 5, wherein said device includes a MESFET, and said material region and said substrate region constitute a source or drain of said MESFET...
Claim 10
Independent Claim
19 words
A device as claimed in any of claims 5 to 7, wherein said metal-containing material region includes elemental metal.
Claim 11
Independent Claim
20 words
A device as claimed in any of claims 5 to 7, wherein said metal-containing material region includes a metal-containing compound.
Claim 12
Dependent Claim
15 words
A device as claimed in claim 9, wherein said metal-containing compound is a metal silicide.
References Cited (Backward Citations)
No citation records indexed.
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