EP0318037A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for forming a fine pattern by using a patterned resist layer
Assignee: Sony Corp
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Filing: 1988-11-25
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Granted: —
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Expires: 2008-11-25
Abstract
Abstract A fine pattern formation using an electron beam induced resist, and use of the resist in making semiconductor devices are disclosed. Collimated electron beam is irradiated and scanned along a desired pattern on a layer on which a resist layer of a desired pattern is deposited under an atmosphere containing a starting material layer for the resist. The resist thus deposited is partially removed by reactive ion etching to remove the skirt like portion of the resist layer, or totally removed by reactive ion ethcing during or after processing by using the resist layer as a processing mask. Since the resist layer width is determined by a diameter of the collimated electron beam, line width of less than hundred Å can be directly drawn. There are also disclosed processes using the resist layer in manufacturing semiconductor devices.
Inventors
- 👤 Akira Ishibashi
- 👤 Yoshifumi Mori
- 👤 Kenji Funato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 17:52
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/20; G03F7/2041
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
107 words
A method for forming a fine pattern by using a patterned resist layer comprising the steps of; a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern, b) directing a collimated charged particle ray on said layer and scanning along said desired pattern to form said patterned resist layer induced from said starting material gas, c) processing by using said patterned resist layer as a processing mask, and d) removing said patterned resist layer by reactive ion etching.
Claim 2
Independent Claim
107 words
A method for forming a fine pattern by using a patterned resist layer comprising the steps of; a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern, b) directing a collimated charged particle ray on said layer and scanning along said desired pattern to form said patterned resist layer induced from said starting material gas, c) processing by using said patterned resist layer as a processing mask, and d) removing said patterned resist layer by reactive ion etching.
Claim 3
Independent Claim
116 words
A method for forming a fine pattern by using a patterned resist layer for use in manufacturing a semiconductor device comprising the steps of; a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern. b) directing a collimated charged particle ray on said layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, c) etching said layer by using said patterned resist layer as an etching mask, and d) removing said patterned resist layer by reactive ion etching.
Claim 4
Independent Claim
116 words
A method for forming a fine pattern by using a patterned resist layer for use in manufacturing a semiconductor device comprising the steps of; a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern. b) directing a collimated charged particle ray on said layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, c) etching said layer by using said patterned resist layer as an etching mask, and d) removing said patterned resist layer by reactive ion etching.
Claim 5
Independent Claim
118 words
A method for forming a fine pattern by using a patterned resist layer for use in manufacturing a semiconductor device comprising the steps of; a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern, b) directing a collimated charged particle ray on said layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, c) forming a metal layer over said layer on said substrate and said patterned resist layer, and d) removing said pattern resist layer by reactive ion etching.
Claim 6
Independent Claim
118 words
A method for forming a fine pattern by using a patterned resist layer for use in manufacturing a semiconductor device comprising the steps of; a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern, b) directing a collimated charged particle ray on said layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, c) forming a metal layer over said layer on said substrate and said patterned resist layer, and d) removing said pattern resist layer by reactive ion etching.
Claim 7
Independent Claim
113 words
A method for forming a fine pattern by using a patterned resist layer comprising the steps of; a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern, b) directing a collimated charged particle ray on said layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, and c) applying reactive ion etching to said patterned resist layer under such condition that a skirt portion of said patterned resist layer adjacent to said layer is removed.
Claim 8
Independent Claim
113 words
A method for forming a fine pattern by using a patterned resist layer comprising the steps of; a) placing a substrate having a layer on which a patterned resist layer is to be formed in an evacuated chamber, said chamber containing a starting material gas to be deposited on said layer as a desired resist pattern, b) directing a collimated charged particle ray on said layer and scanning along said desired pattern to form said patterned resist layer derived from said starting material gas, and c) applying reactive ion etching to said patterned resist layer under such condition that a skirt portion of said patterned resist layer adjacent to said layer is removed.
Claim 9
Independent Claim
18 words
A method according to claims 1, 2, 3 or 4, said charged particle ray is an electron beam.
Claim 10
Independent Claim
23 words
A method according to claims 1, 2, 3 or 4, said evacuated chamber contains said starting material gas of 10⁻⁵ ∼ 10⁻⁸ Torr.
Claim 11
Independent Claim
17 words
A method according to claims 1, 2, 3 or 4, said starting material gas is hydrocarbon gas.
Claim 12
Independent Claim
48 words
A method according to claims 1, 2 or 3, said reactive ion etching is carried out under the condition that gaseous pressure is larger than (3 X 10/L) Pa and electrical power density is larger than 0.3 W/cm², wherein L represents a distance between a pair of electrodes.
Claim 13
Dependent Claim
45 words
A method according to claim 4, said reactive ion etching is carried out under the condition that gaseous pressure is less than (0.3 X 10/L) Pa and electrical power density is less than 0.3 W/cm², wherein L represents a distance between a pair of electrodes.
Claim 14
Dependent Claim
12 words
A method according to claim 2, said layer is a semiconductor layer.
Claim 15
Dependent Claim
27 words
A method according to claim 2, said substrate is a semiconductor substrate and said layer is a metal layer which forms schottky contact to said semiconductor substrate.
Claim 16
Dependent Claim
51 words
A method according to claim 11, wherein said collimated charged particle ray is directed to said substrate from two or more directions to form said patterned resist layer having a wider width at the top of said patterned resist layer than a width at the bottom of said patterned resist layer.
Claim 17
Dependent Claim
35 words
A method according to claim 11, further comprising a step of depositing a metal layer by using said patterned resist layer as a deposition mask, and said metal forms an ohmic contact to said substrate.
Claim 18
Dependent Claim
24 words
A method according to claim 3, wherein said substrate is formed of semiconductor material and said metal forms an ohmic contact to said substrate.
Claim 19
Dependent Claim
31 words
A method according to claim 14, further comprising a step of depositing another metal which forms a schottky contact to said substrate by using said metal layer as a deposition mask.
Claim 20
Dependent Claim
24 words
A method according to claim 4, further comprising a step of etching said layer by using said patterned resist layer as an etching mask.
Claim 21
Dependent Claim
13 words
A method according to claim 16, said layer is a semi-insulating semiconductor layer.
References Cited (Backward Citations)
No citation records indexed.
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