EP0317952A2
Expired / Lapsed
EP
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Device having superlattice structure, and method of and apparatus for manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1988-11-22
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Granted: —
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Expires: 2008-11-22
Abstract
Abstract An ion beam (113) focused into a diameter of at most 0.1 µm bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.
Inventors
- 👤 Hiroshi Yamaguchi
- 👤 Keiya Saito
- 👤 Fumikazu Itoh
- 👤 Koji Ishida
- 👤 Shinji E403 Hitachi-Koyasudai-Apartment Sakano
- 👤 Masao Tamura
- 👤 Shoji Shukuri
- 👤 Tohru Ishitani
- 👤 Tsuneo A403 Hitachi-Koyasudai-Apartment Ichiguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 12:24
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; H01J37/3056; B; B82; B82Y; B82Y10/00; H01J37/02; H01J37/04; H01J37/08; H10; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D84/05; H10D88/00; H10D88/01; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/21; H10P30/28; H10P50/00; H10P50/20; Y; Y10; Y10S; Y10S148/00; Y10S148/046; Y10S148/051; Y10S148/084; Y10S148/16; Y10S438/00; Y10S438/962
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
92 words
A method of manufacturing a device of superlattice structure, comprising: i) the step of preparing a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked; ii) the step of generating a focused ion beam (113); and iii) the step of bombarding the superlattice layers of said one-dimensional superlattice structure by said ion beam (113), and scanning said ion beam rectilinearly in a direction of said superlattice layers, thereby to form potential barrier layers 108, 109, 110, 111, 114, 115, 116, 117).
Claim 2
Independent Claim
92 words
A method of manufacturing a device of superlattice structure, comprising: i) the step of preparing a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked; ii) the step of generating a focused ion beam (113); and iii) the step of bombarding the superlattice layers of said one-dimensional superlattice structure by said ion beam (113), and scanning said ion beam rectilinearly in a direction of said superlattice layers, thereby to form potential barrier layers 108, 109, 110, 111, 114, 115, 116, 117).
Claim 3
Dependent Claim
29 words
A method of manufacturing a device of superlattice structure as defined in Claim 1, wherein said ion beam (113) is focused into a diameter of at most 0.1 µm.
Claim 4
Dependent Claim
26 words
A method of manufacturing a device of superlattice structure as defined in Claim 1, wherein said ion beam (113) bombards substantially perpendicularly to said superlattice layers.
Claim 5
Dependent Claim
38 words
A method of manufacturing a device of superlattice structure as defined in Claim 1, wherein at least two parallel grooves (108, 109, 110, 111) are formed by the bombardment of the scanned ion beam at said step iii).
Claim 6
Dependent Claim
36 words
A method of manufacturing a device of superlattice structure as defined in Claim 1, wherein at least two parallel impurity-implanted parts (2109) are formed by the bombardment of the scanned ion beam at said step iii).
Claim 7
Dependent Claim
46 words
A method of manufacturing a device of superlattice structure as defined in Claim 4, further comprising the step of depositing a desired material into said at least two parallel grooves (108, 109, 110, 111) by energy beam-induced CVD, thereby to form deposition parts (2403, 2404, 2405).
Claim 8
Dependent Claim
52 words
A method of manufacturing a device of superlattice structure as defined in Claim 1, wherein at least two parallel grooves (108, 109, 110, 111) and at least two grooves (114, 115, 116, 117) orthogonal to said prallel grooves are formed by the bombardment of the scanned ion beam at said step iii).
Claim 9
Dependent Claim
48 words
A method of manufacturing a device of superlattice structure as defined in Claim 1, wherein at least two parallel impurity-implanted parts (2109) and at least two impurity-implanted parts orthogonal to said parallel impurity-implanted parts are formed by the bombardment of the scanned ion beam at said step iii).
Claim 10
Dependent Claim
48 words
A method of manufacturing a device of superlattice structure as defined in Claim 7, further comprising the step of depositing an insulator into said at least two parallel grooves (108, 109, 110, 111′) and said at least two grooves (114, 115, 116, 117) orthogonal to said parallel grooves.
Claim 11
Independent Claim
47 words
A device of superlattice structure having a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked; comprising at least two parallel grooves (108, 109, 110, 111) which are formed by processing with a focused ion beam.
Claim 12
Independent Claim
47 words
A device of superlattice structure having a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked; comprising at least two parallel grooves (108, 109, 110, 111) which are formed by processing with a focused ion beam.
Claim 13
Dependent Claim
34 words
A device of superlattice structure as defined in Claim 10, further comprising at least two grooves (114, 115, 116, 117) which intersect orthogonally to said at least two parallel grooves (108, 109, 110, 111).
Claim 14
Independent Claim
45 words
A device of superlattice structure having a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked; comprising at least two parallel impurity-implanted parts (2109) which are formed by implantation with a focused ion beam.
Claim 15
Independent Claim
45 words
A device of superlattice structure having a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked; comprising at least two parallel impurity-implanted parts (2109) which are formed by implantation with a focused ion beam.
Claim 16
Dependent Claim
29 words
A device of superlattice structure as defined in Claim 12, further comprising at least two impurity-implanted parts which intersect orthogonally to said at least two parallel impurity-implanted parts (2109).
Claim 17
Independent Claim
72 words
A device of superlattice structure having a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked; comprising at least two parallel grooves (108, 109, 110, 110) which are formed by processing with a focused ion beam, and deposition parts (2403, 2404, 2405) which are formed by depositing a desired material into said grooves (108, 109, 110, 111) by energy beam-induced CVD.
Claim 18
Independent Claim
72 words
A device of superlattice structure having a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked; comprising at least two parallel grooves (108, 109, 110, 110) which are formed by processing with a focused ion beam, and deposition parts (2403, 2404, 2405) which are formed by depositing a desired material into said grooves (108, 109, 110, 111) by energy beam-induced CVD.
Claim 19
Dependent Claim
60 words
A device of superlattice structure as defined in Claim 14, further comprising at least two grooves (114, 115, 116, 117) which intersect orthogonally to said at least two parallel grooves (108, 109, 110, 111), and deposition parts (2403, 2404, 2405) which are formed by depositing a desired material into said grooves (114, 115, 116, 117) by the energy beam-induced CVD.
Claim 20
Independent Claim
104 words
An apparatus for manufacturing a device of superlattice structure, comprising first means (1200 - 1211, 1217; 1904) for extracting, and focusing an ion beam (113) and bombarding by said ion beam (113), and second means (1212, 1218, 1220, 1221, 1223) for positioning the ion beam focused and bombarding by said first means, relative to a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked, and for scanning said ion beam rectilinearly in a direction of the superlattice layers, thereby to form a plurality of potential barrier layers (108 - 111, 114 - 117).
Claim 21
Independent Claim
104 words
An apparatus for manufacturing a device of superlattice structure, comprising first means (1200 - 1211, 1217; 1904) for extracting, and focusing an ion beam (113) and bombarding by said ion beam (113), and second means (1212, 1218, 1220, 1221, 1223) for positioning the ion beam focused and bombarding by said first means, relative to a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked, and for scanning said ion beam rectilinearly in a direction of the superlattice layers, thereby to form a plurality of potential barrier layers (108 - 111, 114 - 117).
Claim 22
Dependent Claim
34 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, wherein said first means comprises a focusing optical system (1204 - 1208, 1214 - 1216, 1219) which includes two lenses.
Claim 23
Dependent Claim
56 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 17, wherein a plurality of sets (1212, 1213) of deflector electrodes for deflecting said ion beam, as said second means, are interposed between said two stages of lenses of said first means, and a power supply (1218) is provided for said deflector electrodes.
Claim 24
Dependent Claim
32 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, wherein third means (1901 - 1903) for separating a specified ion species is provided as said first means.
Claim 25
Dependent Claim
37 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, further comprising means (2402; 3102, 3103) for depositing a desired material into grooves formed as said potential barrier layers, by energy beam-induced CVD.
Claim 26
Dependent Claim
38 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, wherein reactive gas introducing means (1907) for forming grooves as said potential barrier layers, by ion beam-induced etching is provided as said second means.
Claim 27
Dependent Claim
42 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, further comprising energy beam irradiation means (2901 - 2905, 2911, 3001, 1203, 3102 - 3104) for remedying defects ascribable to the bombardment of said ion beam, by annealing.
Claim 28
Dependent Claim
49 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, further comprising observation means (1221, 1220; 3001) for detecting charged particles generated from the superlattice structure when an energy beam irradiates the structure, so as to boserve said superlattice structure including said potential barrier layers.
Claim 29
Dependent Claim
48 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, further comprising analysis means (3106, 3107) for detecting charged particles generated from the superlattice structure when an energy beam irradiates the structure, so as to analyze said superlattice structure including said potential barrier layers.
Claim 30
Dependent Claim
41 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, further comprising detection means (1401 - 1403, 1405; 1905 - 1907) for detecting a depth of the potential barrier layer which is formed by said second means.
Claim 31
Dependent Claim
50 words
An apparatus for manufacturing a device of superlattice structure as defined in Claim 16, further comprising means (2908, 2909, 2910) for detecting an output such as current flowing through the superlattice structure when an energy beam irradiates the structure, so as to inspect characteristics of said device of superlattice structure.
Claim 32
Independent Claim
121 words
An apparatus for manufacturing a device of superlattice structure, comprising first means (3203 - 3209) for forming a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked, second means (1200 - 1211, 1217; 1904, 1212, 1218, 1220, 1221, 1223) for positioning a focused ion beam (113) for bombardment relative to said one-dimensional superlattice structure and for scanning said ion beam (113) rectilinearly in a direction of the superlattice layers, thereby to form a plurality of potential barrier layers (108 - 111, 114 - 117), and connection means (3202, 3212, 3213) for connecting a sample chamber of said first means and a sample chamber of said second means through gate valves.
Claim 33
Independent Claim
121 words
An apparatus for manufacturing a device of superlattice structure, comprising first means (3203 - 3209) for forming a one-dimensional superlattice structure in which well layers (103, 105, 107) and potential barrier layers (102, 104, 106) are alternately stacked, second means (1200 - 1211, 1217; 1904, 1212, 1218, 1220, 1221, 1223) for positioning a focused ion beam (113) for bombardment relative to said one-dimensional superlattice structure and for scanning said ion beam (113) rectilinearly in a direction of the superlattice layers, thereby to form a plurality of potential barrier layers (108 - 111, 114 - 117), and connection means (3202, 3212, 3213) for connecting a sample chamber of said first means and a sample chamber of said second means through gate valves.
References Cited (Backward Citations)
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