EP0317445A2
Expired / Lapsed
EP
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Method for fabricating a silicon carbide substrate
Assignee: Fujitsu Ltd
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Filing: 1988-11-18
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Granted: —
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Expires: 2008-11-18
Abstract
Abstract Two realizations of a method are disclosed for fabricating semiconductor substrate having an S0I β -SiC on insulator structure. In the first realization, two substrates are prepared. The first substrate is silicon coated with SIO₂ ; the second substrate is silicon on which β -SiC is hetero-epitaxially grown. These substrates are bonded to each other by a heating process. During the heating process, anodic bonding may be applied. The bonded substrate is then etched or mechanically polished off from the side of the second substrate, to expose the β -SiC layer. In the second realization, β -SiC is grown on a silicon substrate. The surface of the substrate is coated with SiO₂ ; then polysilicon or poly-SiC is deposited on the surface of the β-SiC side. The substrate is then etched or mechanically polished from the side of the silicon substrate to expose the β -SiC.
Inventors
- 👤 Hiroshi Gotou
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 03:40
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10D; H10D12/00; H10D12/01; H10D12/031; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10W; H10W10/00; H10W10/01; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/135; Y10S148/148
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
126 words
A method for fabricating semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide (β -SiC), said method comprising the following steps : a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal ; b) forming a layer of β -SiC single crystal on one surface of said second substrate ; c) coating the surface of said first substrate with an insulator layer ; d) stacking said second substrate onto said first substrate with said β -SiC layer facing said first substrate ; e) bonding said first and second substrates by heating them in an inert gas ambient ; and f) removing said second substrate to expose said β -SiC layer.
Claim 2
Independent Claim
126 words
A method for fabricating semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide (β -SiC), said method comprising the following steps : a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal ; b) forming a layer of β -SiC single crystal on one surface of said second substrate ; c) coating the surface of said first substrate with an insulator layer ; d) stacking said second substrate onto said first substrate with said β -SiC layer facing said first substrate ; e) bonding said first and second substrates by heating them in an inert gas ambient ; and f) removing said second substrate to expose said β -SiC layer.
Claim 3
Dependent Claim
22 words
A method for fabricating semiconductor substrate as set forth in claim 1, wherein said insulator layer is a silicon dioxide layer (SiO₂).
Claim 4
Dependent Claim
18 words
A method for fabricating semiconductor substrate as set forth in claim 1, wherein said inert gas is nitrogen.
Claim 5
Dependent Claim
31 words
A method for fabricating semiconductor substrate as set forth in claim 1, wherein said bonding step (e) further comprises a substep of applying electric potential between said first and second substrates.
Claim 6
Dependent Claim
22 words
A method for fabricating semiconductor substrate as set forth in claim 1, wherein said first semiconductor material is silicon or silicon carbide.
Claim 7
Independent Claim
127 words
A method for fabricating semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide (β -SiC) said method comprising the following steps : a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal ; b) forming a layer of β -SiC single crystal on one surface of said second substrate ; c) coating surface of said second substrate and β-SiC layer with an insulator layer ; d) stacking said second substrate onto said first substrate with said β -SiC layer facing said first substrate ; e) bonding said first and second substrates by heating them in an inert gas ambient ; and f) removing said second substrate to expose said β-SiC layer.
Claim 8
Independent Claim
127 words
A method for fabricating semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide (β -SiC) said method comprising the following steps : a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal ; b) forming a layer of β -SiC single crystal on one surface of said second substrate ; c) coating surface of said second substrate and β-SiC layer with an insulator layer ; d) stacking said second substrate onto said first substrate with said β -SiC layer facing said first substrate ; e) bonding said first and second substrates by heating them in an inert gas ambient ; and f) removing said second substrate to expose said β-SiC layer.
Claim 9
Dependent Claim
22 words
A method for fabricating semiconductor substrate as set forth in claim 6, wherein said insulator layer is a silicon dioxide layer (SiO₂).
Claim 10
Independent Claim
18 words
A method for fabricating semiconductor substrate as set forth in clam 6, wherein said inert gas is nitrogen.
Claim 11
Independent Claim
18 words
A method for fabricating semiconductor substrate as set forth in clam 6, wherein said inert gas is nitrogen.
Claim 12
Dependent Claim
31 words
A method for fabricating semiconductor substrate as set forth in claim 6, werein said bonding step (e) further comprises a substep of applying electric potential between said first and second substrates.
Claim 13
Dependent Claim
22 words
A method for fabricating semiconductor substrate as set forth in claim 6, wherein said first semiconductor material is silicon or silicon carbide.
Claim 14
Independent Claim
125 words
A method for fabricating semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide (β -SiC), said method comprising the following : a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal ; b) forming a layer of β -SiC single crystal on one surface of said second substrate ; c) coating said first substrate, second substrate and β-SiC layer with an insulator layer ; d) stacking said second substrate on said first substrate with said β-SiC layer facing said first substrate ; e) bonding said first and second substrates by heating them in an inert gas ambient ; and f) removing said second substrate to expose said β-SiC layer.
Claim 15
Independent Claim
125 words
A method for fabricating semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide (β -SiC), said method comprising the following : a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal ; b) forming a layer of β -SiC single crystal on one surface of said second substrate ; c) coating said first substrate, second substrate and β-SiC layer with an insulator layer ; d) stacking said second substrate on said first substrate with said β-SiC layer facing said first substrate ; e) bonding said first and second substrates by heating them in an inert gas ambient ; and f) removing said second substrate to expose said β-SiC layer.
Claim 16
Dependent Claim
42 words
A method for fabricating semiconductor substrate as set forth in claim 11, further comprising a step of : c') further coating said second substrate and β -SiC layer with phosphosilicate glass (PSG), said step c′) being inserted between steps c) and d).
Claim 17
Dependent Claim
21 words
A method for fabricating semiconductor substrate as set forth n claim 11 or 12, wherein said insulator is silicon dioxide (SiO₂).
Claim 18
Dependent Claim
20 words
A method for fabricating semiconductor substrate as set forth in claim 11 or 12, wherein said inert gas is nitrogen.
Claim 19
Dependent Claim
33 words
A method for fabricating semiconductor substrate as set forth in claim 11 or 12, wherein said bonding step e) further comprises a substep of applying electric potential between said first and second substrates.
Claim 20
Dependent Claim
24 words
A method for fabricating semiconductor substrate as set forth in claim 11 or 12, wherein said first semiconductor material is silicon or silicon carbide.
Claim 21
Independent Claim
98 words
A method for fabricating semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide (β-SiC), said method comprising the following steps : a) forming a layer of β -SiC crystal on one surface of a silicon substrate which is made of silicon single crystal ; b) coating the surface of said silicon substrate and β -SiC layer with an insulator layer ; c) depositing polycrystalline silicon (polysilicon) or polycrystalline silicon carbide (poly-SiC) on the SiC side of said silicon substrate ; and d) removing said silicon substrate to expose said β -SiC layer.
Claim 22
Independent Claim
98 words
A method for fabricating semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide (β-SiC), said method comprising the following steps : a) forming a layer of β -SiC crystal on one surface of a silicon substrate which is made of silicon single crystal ; b) coating the surface of said silicon substrate and β -SiC layer with an insulator layer ; c) depositing polycrystalline silicon (polysilicon) or polycrystalline silicon carbide (poly-SiC) on the SiC side of said silicon substrate ; and d) removing said silicon substrate to expose said β -SiC layer.
Claim 23
Independent Claim
20 words
A method for fabricating semiconductor substrate as set forth in claims 17, wherein said insulator layer is silicon dioxide (SiO₂).
References Cited (Backward Citations)
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