EP0316793A2
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EP
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Bipolar-complementary metal oxide semiconductor circuit
Assignee: Fujitsu VLSI Ltd
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Filing: 1988-11-11
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Granted: —
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Expires: 2008-11-11
Abstract
Abstract A bipolar-complementary metal oxide semiconductor circuit includes a p-channel MOS transistor (M1), an n-channel MOS transistor (M2), first and second bipolar transistors (Q1, Q2). A base of the first bipolar transistor (Q1) is connected to a negative power source (V EE ) through the n-channel MOS transistor (M2). A diode (D1) is connected to the base and emitter of the first bipolar transistor (Q1). The diode (D1) functions to prevent a reverse-biased voltage exceeding a base-emitter breakdown voltage (V out - V B ) from being applied between the base and emitter of the first bipolar transistor (Q1).
Inventors
- 👤 Isao Fukushi
- 👤 Takahisa Muroi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:44
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/09448; H03K19/003; H03K19/00307; H10D84/40; H10D84/401; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/854
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
214 words
A bipolar-complementary metal oxide semiconductor circuit comprising first and second power sources (V CC , V EE ); logic means comprising first and second metal oxide semiconductor (MOS) transistors (M1, M2) serially connected between said first and second power sources (V CC , V EE ), an input signal (V in ) being applied to gates of said first and second MOS transistors (M1, M2); a first bipolar transistor (Q1) having a collector coupled to said first power source (V CC ) and a base coupled to a connecting point between said first and second MOS transistors (M1, M2); a second bipolar transistor (Q2) having an emitter coupled to said second power source (V /EE ) and a collector coupled to an emitter of said first bipolar transistor (Q1) and used as an output terminal (OUT) of the circuit; and a third MOS transistor (M3) connected between a base of said second bipolar transistor (Q2) and said output terminal (OUT) of the circuit, a gate of said third MOS transistor (M3) begin supplied with said input signal (V in ), characterized in the circuit comprises a diode (D1) having an anode connected to the emitter of said first bipolar transistor (Q1) and a cathode connected to the base of said first bipolar transistor (Q1).
Claim 2
Dependent Claim
214 words
A bipolar-complementary metal oxide semiconductor circuit comprising first and second power sources (V CC , V EE ); logic means comprising first and second metal oxide semiconductor (MOS) transistors (M1, M2) serially connected between said first and second power sources (V CC , V EE ), an input signal (V in ) being applied to gates of said first and second MOS transistors (M1, M2); a first bipolar transistor (Q1) having a collector coupled to said first power source (V CC ) and a base coupled to a connecting point between said first and second MOS transistors (M1, M2); a second bipolar transistor (Q2) having an emitter coupled to said second power source (V /EE ) and a collector coupled to an emitter of said first bipolar transistor (Q1) and used as an output terminal (OUT) of the circuit; and a third MOS transistor (M3) connected between a base of said second bipolar transistor (Q2) and said output terminal (OUT) of the circuit, a gate of said third MOS transistor (M3) begin supplied with said input signal (V in ), characterized in the circuit comprises a diode (D1) having an anode connected to the emitter of said first bipolar transistor (Q1) and a cathode connected to the base of said first bipolar transistor (Q1).
Claim 3
Dependent Claim
57 words
A bipolar-complementary metal oxide semiconductor circuit as claimed in claim 1, characterized in that when the input signal (V in ) is switched from a low level to a high level, a current passes from the output terminal (OUT) to the second power source (V EE ) through the diode (D1) and the second MOS transistor (M2).
Claim 4
Dependent Claim
61 words
A bipolar-complementary metal oxide semiconductor circuit as claimed in any of claims 1 and 2, characterized in that the diode (D1) is constituted by a bipolar transistor (Q5) in which the anode of the diode (D1) is collector and base of said bipolar transistor (Q5) mutually connected, the cathode of the diode (D1) is an emitter of said bipolar transistor (Q5).
Claim 5
Dependent Claim
50 words
A bipolar-complementary metal oxide semiconductor circuit as claimed in claim 3, characterized in that the collector of the bipolar transistor (Q5) of the diode (D1) and the collector of the first bipolar transistor (Q2) are formed in common by an impurity diffusion region (30) formed in a semiconductor substrate (18).
Claim 6
Dependent Claim
35 words
A bipolar-complementary metal oxide semiconductor circuit as claimed in any of claims 1 to 4, further comprising a fourth MOS transistor (M4) between the output terminal (OUT) and the negative power source (V EE ).
References Cited (Backward Citations)
No citation records indexed.
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