Semiconductor memory device having an ohmic contact between an aluminum-silicon alloy metallization film and a silicon substrate

Claim 2

A semiconductor memory device comprising a memory cell portion and a peripheral circuit portion which are provided on a silicon substrate (11), the memory cell portion comprising a first insulation film (20) formed on the silicon substrate; and a first metallization film (40) formed on the first insulation film, the first metallization film including a polysilicon film (21) and a metal silicide film (22) which are stacked in this sequence, characterized in that the peripheral circuit portion comprises a second insulation film (17) having a contact hole (33, 34) formed on the silicon substrate; a barrier layer (50, 60) formed in the contact hole having a layer structure which is the same as that of the first metallization film (40) and which is formed at the same time as forming the first metallization film (40); and a second metallization film (29, 30) of an alloy of aluminum and silicon which overlies the barrier layer (50, 60) in the contact hole (33, 34).

Claim 3

A semiconductor memory device as claimed in claim 1, characterized in that the memory cell portion comprises a memory cell array (110, 111) which includes a plurality of memory cells.

Claim 4

A semiconductor memory device as claimed in claim 2, characterized in that the peripheral circuit portion comprises sense amplifier means (112, 113) for amplifying an information signal read out from the memory cell array, address decoder means (114, 115, 116) for decoding an address signal supplied from an external circuit, and logic means (500) for carrying out a logic operation on a signal supplied from the sense amplifier means or supplied to the decoder means.

Claim 5

A semiconductor memory device as claimed in claim 1, characterized in that the metal silicide film (22) included in each of the first metallization film (40) and the barrier layer (50, 60) comprises a refractory metal silicide.

Claim 6

A semiconductor memory device as claimed in claim 4, characterized in that the metal silicide film (22) comprises a material selected from the group consisting of tungsten silicide, molybdenum silicide, tantalum silicide and titanium silicide.

Claim 7

A semiconductor memory device as claimed in claim 1, characterized in that the polysilicon film (21) included in each of the first metallization film (40) and the barrier layer (50, 60) is doped with an n-type impurity.

Claim 8

A semiconductor memory device as claimed in claim 1, characterized in that the semiconductor memory device is a dynamic random access memory device, and in that the first metallization film (40) is a bit line of the dynamic random access memory device.

Claim 9

A semiconductor memory device as claimed in claim 1, characterized by further comprising a third insulation film (23) formed on which the second metallization film (29, 30) is formed, and characterized in that the third insulation film (23) has a through hole (33, 34) through which the barrier layer (50, 60) is exposed, and the second metallization film (29, 30) overlies the barrier layer (50, 60) in the through hole (33, 34), and in that the third insulation film (23) also cover the first metallization film (40).

Claim 10

A semiconductor memory device comprising a memory cell portion and a peripheral circuit portion which are provided on a silicon substrate (11), the memory cell portion comprising a first field insulation film (12) formed on the substrate; a first insulation film (20) formed on the silicon substrate and the first field insulation film; and a first metallization film (40) formed on the first insulation film, the first metallization film including a polysilicon film (21) and a metal silicide film (22) which are stacked in this sequence, the peripheral circuit portion comprising a second field insulation film (12) formed on the substrate and the second insulation film; a second insulation film (17) having a contact hole (33, 34) formed on the silicon substrate; a barrier layer (50, 60) formed in the contact hole having a layer structure which is the same as that of the first metallization film (40) and which is formed at the same time as forming the first metallization film; and a second metallization film (29, 30) of an alloy of aluminum and silicon which overlies the barrier layer (50, 60) in the contact hole (33, 34), an edge of the contact hole extending in a first direction being defined by an edge of the second field insulation film (12), and an edge of the contact hole extending in a second direction being defined by patterning the second insulation film (17).

Claim 11

A semiconductor memory device comprising a memory cell portion and a peripheral circuit portion which are provided on a silicon substrate (11), the memory cell portion comprising a first field insulation film (12) formed on the substrate; a first insulation film (20) formed on the silicon substrate and the first field insulation film; and a first metallization film (40) formed on the first insulation film, the first metallization film including a polysilicon film (21) and a metal silicide film (22) which are stacked in this sequence, the peripheral circuit portion comprising a second field insulation film (12) formed on the substrate and the second insulation film; a second insulation film (17) having a contact hole (33, 34) formed on the silicon substrate; a barrier layer (50, 60) formed in the contact hole having a layer structure which is the same as that of the first metallization film (40) and which is formed at the same time as forming the first metallization film; and a second metallization film (29, 30) of an alloy of aluminum and silicon which overlies the barrier layer (50, 60) in the contact hole (33, 34), an edge of the contact hole extending in a first direction being defined by an edge of the second field insulation film (12), and an edge of the contact hole extending in a second direction being defined by patterning the second insulation film (17).

Claim 12

A semiconductor memory device as claimed in claim 1, characterized in that the second direction is the same direction as the second metallization film extends, and the first direction is perpendicular to the second direction.