EP0312389A2
Expired / Lapsed
EP
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A liquid-crystal panel
Assignee: Sharp Corp
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Filing: 1988-10-14
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Granted: —
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Expires: 2008-10-14
Abstract
Abstract A liquid-crystal panel is disclosed that comprises thin-film transistors, wherein a terminal electrode for a gate electrode of the thin-film transistor is composed of a layer that is made of an electrode material used for the gate electrode, and a transparent conductive coating formed on the said layer.
Inventors
- 👤 Keiji Yamamura
- 👤 Takashi Nukii
- 👤 Shigeo Nakabu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 14:28
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13458; G02F1/136; G02F1/1362; G02F1/1368
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
44 words
A liquid-crystal panel comprising thin-film transistors, wherein a terminal electrode for a gate electrode of said thin-film transistor is composed of a layer that is made of an electrode material used for said gate electrode, and a transparent conductive coating formed on said layer.
Claim 2
Dependent Claim
44 words
A liquid-crystal panel comprising thin-film transistors, wherein a terminal electrode for a gate electrode of said thin-film transistor is composed of a layer that is made of an electrode material used for said gate electrode, and a transparent conductive coating formed on said layer.
Claim 3
Dependent Claim
48 words
A liquid-crystal panel according to claim 1, wherein said thin-film transistor has a gate insulator film and an amorphous semiconductor layer formed thereon, said gate insulator film comprising an anodic oxidation film formed on said gate electrode and a protective insulator film formed on said anodic oxidation film.
Claim 4
Dependent Claim
19 words
A liquid-crystal panel according to claim 1, wherein said transparent conductive coating is made of indium tin oxide (ITO).
Claim 5
Dependent Claim
24 words
A liquid-crystal panel according to claim 2, wherein said gate electrode is made of Ta and said anodic oxidation film is made of Ta₂O₅.
Claim 6
Dependent Claim
17 words
A liquid-crystal panel according to claim 2, wherein said amorphous semiconductor layer is made of amorphous silicon.
References Cited (Backward Citations)
No citation records indexed.
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