EP0311446A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Apparatus for producing compound semiconductor
Assignee: Mitsubishi Chemical Corp
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Filing: 1988-10-07
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Granted: —
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Expires: 2008-10-07
Abstract
Abstract In apparatus for producing compound semiconductor by applying vaporized organometal compound onto a substrate (15) carried by a susceptor (16), pressure of organometal compound gas is detected by a pressure sensor (1) at an outlet side of a bubbler (18) which vaporizes starting organometal compound for effecting feedback control. The pressure information is used to control flow rate of carrier gas (10) fed to the bubbler (18). The feedback controlled organometal compound gas (11) is fed via a mass flow controller (3B) to a reaction tube (14) in which the susceptor (16) is provided. An upper surface (43) of the susceptor (16) is inclined by an angle which is less than 45 degrees with respect to horizontal plane including axis of gas flow applied to the substrate (15) within the horizontal reaction tube (14), while the susceptor (16) is rotated about its center axis perpendicular to the upper surface (43) thereof. Feedback control may be effected by detecting the pressure of an exhaust gas from the reaction tube.
Inventors
- 👤 Kiyoshi Ichimura
- 👤 Akihito Tsushi
- 👤 Hideo Kawanishi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:24
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C23C16/4401; C23C16/4402; C23C16/448; C23C16/4481; C23C16/4482; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584; C23C16/52; C30; C30B; C30B25/00; C30B25/02; C30B25/12; C30B25/14; C30B25/16
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
122 words
Apparatus for producing a compound semiconductor having a bubbler ( 4) for producing vaporized organometal compound by leading a carrier gas thereinto, and a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate by leading said vaporized organometal compound to said reaction tube (14), characterized by first means (3B) provided between said bubbler and said reaction tube for accurately controlling flow rate of said vaporized organometal compound, second means (1) for detecting pressure of said vaporized organometal compound at outlet side of said bubbler (4), and third means (2) provided at inlet side of said bubbler (4) for controlling flow rate of said carrier gas in accordance with an output signal from said second means (1).
Claim 2
Dependent Claim
122 words
Apparatus for producing a compound semiconductor having a bubbler ( 4) for producing vaporized organometal compound by leading a carrier gas thereinto, and a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate by leading said vaporized organometal compound to said reaction tube (14), characterized by first means (3B) provided between said bubbler and said reaction tube for accurately controlling flow rate of said vaporized organometal compound, second means (1) for detecting pressure of said vaporized organometal compound at outlet side of said bubbler (4), and third means (2) provided at inlet side of said bubbler (4) for controlling flow rate of said carrier gas in accordance with an output signal from said second means (1).
Claim 3
Dependent Claim
52 words
Apparatus as claimed in Claim 1, wherein said second means (1) comprises a pressure sensor for detecting the pressure of said vaporized gas, and a signal processing circuit (31) responsive to an output signal from said pressure sensor (1) and a reference signal (Vr) representing a desired pressure of said vaporized gas.
Claim 4
Dependent Claim
27 words
Apparatus as claimed in Claim 1 or 2 further comprising means (24) for maintaining the temperature of said organometal compound contained in said bubbler (4) substantially constant.
Claim 5
Dependent Claim
101 words
Apparatus for producing compound semiconductor having a bubbler (14) for producing vaporized organometal compound by leading a carrier gas thereinto, a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate by leading said vaporized organometal compound to said reaction tube, and an exhauster (23) communicated with an outlet of said reaction tube (14) via an exhaust pipe for exhausting said vaporized organometal compound from said reaction tube (14), characterized by means (51, 52) responsive to pressure of said exhaust gas for maintaining pressure of said vaporized organometal compound within said reaction tube (U1) substantially constant.
Claim 6
Dependent Claim
101 words
Apparatus for producing compound semiconductor having a bubbler (14) for producing vaporized organometal compound by leading a carrier gas thereinto, a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate by leading said vaporized organometal compound to said reaction tube, and an exhauster (23) communicated with an outlet of said reaction tube (14) via an exhaust pipe for exhausting said vaporized organometal compound from said reaction tube (14), characterized by means (51, 52) responsive to pressure of said exhaust gas for maintaining pressure of said vaporized organometal compound within said reaction tube (U1) substantially constant.
Claim 7
Dependent Claim
62 words
Apparatus as claimed in Claim 4, wherein said means (51, 52) comprises means (51) for detecting pressure of said exhaust gas from said reaction tube (14), means for supplying inactive gas to said reaction tube (14) at a portion near outlet thereof, and means (52) for controlling flow rate of said inactive gas in accordance with said pressure of said exhaust gas.
Claim 8
Dependent Claim
24 words
Apparatus as claimed in Claim 4, wherein said means comprises means (52) for controlling flow speed of said exhaust gas from said reaction tube.
Claim 9
Dependent Claim
60 words
Apparatus as claimed in Claim 6, wherein said means comprises means (51) for detecting pressure of said exhaust gas from said reaction tube, means for supplying inactive gas to said exhaust pipe connected to an outlet of said reaction tube, and means (52) for controlling flow rate of said inactive gas in accordance with said pressure of said exhaust gas.
Claim 10
Dependent Claim
122 words
Apparatus for producing compound semiconductor having a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate (43) carried by a susceptor (16) by leading vaporized organometal compound to said reaction tube (14) characterised in that said reaction tube (14) is a horizontal reaction tube so that said vaporized organometal compound is supplied in a horizontal direction to said substrate (43) an upper surface of said susceptor (16) is in inclined by an angle less than 45 degrees with respect to the general direction of flow of said vaporized organometal compound, and by means (20, 41, 42) for rotating said susceptor (16) about a center axis which is perpendicular to said upper surface of said susceptor (16).
Claim 11
Dependent Claim
122 words
Apparatus for producing compound semiconductor having a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate (43) carried by a susceptor (16) by leading vaporized organometal compound to said reaction tube (14) characterised in that said reaction tube (14) is a horizontal reaction tube so that said vaporized organometal compound is supplied in a horizontal direction to said substrate (43) an upper surface of said susceptor (16) is in inclined by an angle less than 45 degrees with respect to the general direction of flow of said vaporized organometal compound, and by means (20, 41, 42) for rotating said susceptor (16) about a center axis which is perpendicular to said upper surface of said susceptor (16).
Claim 12
Dependent Claim
51 words
Apparatus as claimed in Claim 8, wherein said susceptor (16) is supported within said reaction tube (14) by way of a supporting shaft (19) having a supporting plate (18), a freely rotatable spacer (17) made of carbon being interposed between lower surface of said susceptor (16) and said supporting plate (18).
Claim 13
Dependent Claim
20 words
Apparatus as claimed in Claim 8 or 9, further comprising means for maintaining pressure within said reaction tube (14) constant.
Claim 14
Dependent Claim
62 words
Apparatus as claimed in Claim 10, wherein said constant pressure maintaining means comprises means (51) for detecting pressure of an exhaust gas from said reaction tube (14), means for supplying inactive gas to said reaction tube at a portion near outlet thereof, and means (52) for controlling flow rate of said inactive gas in accordance with said pressure of said exhaust gas.
Claim 15
Dependent Claim
26 words
Apparatus as claimed in Claim 10, wherein said constant pressure maintaining means comprises means (52) for controlling speed of exhaust gas flow from said reaction tube.
Claim 16
Dependent Claim
64 words
Apparatus as claimed in Claim 12, wherein said constant pressure maintaining means comprises means (51) for detecting pressure of said exhaust gas from said reaction tube, means for supplying inactive gas to an exhaust pipe connected to an outlet of said reaction tube (14), and means (52) for controlling flow rate of said inactive gas in accordance with said pressure of said exhaust gas.
Claim 17
Dependent Claim
181 words
Apparatus for producing compound semiconductor having a bubbler (4) for producing vaporized organometal compound by leading a carrier gas thereinto, and a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate carried by a susceptor (16) by leading said vaporized organometal compound to said reaction tube, characterised by first means (3B) provided between said bubbler (4) and said reaction tube (14) for accurately controlling flow rate of said vaporized organometal compound, second means (1) for detecting pressure of said vaporized organometal compound at outlet side of said bubbler (4), third means (2) provided at inlet side of said bubbler (4) for controlling flow rate of said carrier gas in accordance with an output signal from said second means (1), in that an upper surface of said susceptor (16) is inclined by an angle less than 45 degrees with respect to the general direction of flow of said vaporized organometal compound and by means (20, 41, 42) for rotating said susceptor about a center axis which is perpendicular to said upper surface of said susceptor (16).
Claim 18
Dependent Claim
181 words
Apparatus for producing compound semiconductor having a bubbler (4) for producing vaporized organometal compound by leading a carrier gas thereinto, and a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate carried by a susceptor (16) by leading said vaporized organometal compound to said reaction tube, characterised by first means (3B) provided between said bubbler (4) and said reaction tube (14) for accurately controlling flow rate of said vaporized organometal compound, second means (1) for detecting pressure of said vaporized organometal compound at outlet side of said bubbler (4), third means (2) provided at inlet side of said bubbler (4) for controlling flow rate of said carrier gas in accordance with an output signal from said second means (1), in that an upper surface of said susceptor (16) is inclined by an angle less than 45 degrees with respect to the general direction of flow of said vaporized organometal compound and by means (20, 41, 42) for rotating said susceptor about a center axis which is perpendicular to said upper surface of said susceptor (16).
Claim 19
Dependent Claim
55 words
Apparatus according to any one of claims 8 to 14 wherein said reaction tube (14) is a horizontal reaction tube so that said vaporized organometal compound is supplied in a horizontal direction to said substrate, said upper surface of the susceptor (16) is inclined at an angle of less than 45 degrees to the horizontal.
Claim 20
Dependent Claim
171 words
Apparatus for producing compound semiconductor having a bubbler (4) for producing vaporized organometal compound by leading a carrier gas thereinto, a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate by leading said vaporized organometal compound to said reaction tube (14), and an exhauster (23) communicated with an outlet of said reaction tube (14) via an exhaust pipe for exhausting said vaporized organometal compound from said reaction tube (14), characterized by first means (3B) provided between said bubbler (4) and said reaction tube (14) for accurately controlling flow rate of said vaporized organometal compound, second means (1) for detecting pressure of said vaporized organometal compound at outlet side of said bubbler (4), third means (2) provided at inlet side of said bubbler (4), for controlling flow rate of said carrier gas in accordance with an output signal from said second means (1), and fourth rmeans responsive to pressure of said exhaust gas for maintaining pressure of said vaporized organometal compound within said reaction tube constant.
Claim 21
Dependent Claim
171 words
Apparatus for producing compound semiconductor having a bubbler (4) for producing vaporized organometal compound by leading a carrier gas thereinto, a reaction tube (14) for performing vapor phase growth of a semiconductor crystal on a substrate by leading said vaporized organometal compound to said reaction tube (14), and an exhauster (23) communicated with an outlet of said reaction tube (14) via an exhaust pipe for exhausting said vaporized organometal compound from said reaction tube (14), characterized by first means (3B) provided between said bubbler (4) and said reaction tube (14) for accurately controlling flow rate of said vaporized organometal compound, second means (1) for detecting pressure of said vaporized organometal compound at outlet side of said bubbler (4), third means (2) provided at inlet side of said bubbler (4), for controlling flow rate of said carrier gas in accordance with an output signal from said second means (1), and fourth rmeans responsive to pressure of said exhaust gas for maintaining pressure of said vaporized organometal compound within said reaction tube constant.
References Cited (Backward Citations)
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