EP0308971A2
Expired / Lapsed
EP
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Bump and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1988-09-23
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Granted: —
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Expires: 2008-09-23
Abstract
Abstract According to the present invention, there is provided a method for forming a bump and comprising the steps of dipping a semiconductor element (18) with an A l electrode (12) and a passivation film (13) formed thereon in a palladium solution containing 5 to 2,000 ppm of at least one element selected from the group consisting of Zn, Pb, Sn, Cd, and Cr, selectively precipitating palladium (14) on the electrode, and conducting electroless nickel-plating on the semiconductor element, including the electrode on which palladium is precipitated.
Inventors
- 👤 Koji C/O Patent Division Yamakawa
- 👤 Nobuo C/O Patent Division Iwase
- 👤 Michihiko C/O Patent Division Inaba
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 19:01
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/019; H10W72/20; H10W72/221; H10W72/222; H10W72/223; H10W72/251; H10W72/252; H10W72/255; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
84 words
A method for forming a bump, characterized in that it comprises the steps of: dipping a semiconductor element (18) with an Aℓ electrode (12) and a passivation film (13) formed thereon in a palladium solution containing 5 to 2,000 ppm of at least one element selected from a group consisting of Zn, Pb, Sn, Cd, and Cr; selectively precipitating palladium (14) on said electrode (12); and performing electroless nickel-plating on said semiconductor element (18), including said electrode (12) on which palladium (14) is precipitated.
Claim 2
Independent Claim
84 words
A method for forming a bump, characterized in that it comprises the steps of: dipping a semiconductor element (18) with an Aℓ electrode (12) and a passivation film (13) formed thereon in a palladium solution containing 5 to 2,000 ppm of at least one element selected from a group consisting of Zn, Pb, Sn, Cd, and Cr; selectively precipitating palladium (14) on said electrode (12); and performing electroless nickel-plating on said semiconductor element (18), including said electrode (12) on which palladium (14) is precipitated.
Claim 3
Dependent Claim
30 words
A method according to claim 1, characterized in that it further includes the step of annealing said semiconductor element (18) at 100 to 500°C, after said step of electroless nickel-plating.
Claim 4
Dependent Claim
31 words
A method according to claim 1, characterized in that it further includes a step of forming a copper layer (218) on a nickel film (217), after said step of electroless nickel-plating.
Claim 5
Dependent Claim
29 words
A method according to claim 1, characterized in that it further includes a step of forming a gold layer on a nickel film, after said step of electroless nickel-plating.
Claim 6
Dependent Claim
31 words
A method according to claim 1, characterized in that it further includes a step of forming a solder layer (319) on a nickel film (317), after said step of electroless nickel-plating.
Claim 7
Dependent Claim
16 words
A method according to claim 1, characterized in that said semiconductor element is an LSI chip.
Claim 8
Dependent Claim
45 words
A bump, characterized in that it comprises: an Aℓ electrode (112) formed on a semiconductor element (111); and a palladium layer (114₁) formed on said electrode (112) and a bump material layer (115₁) formed by electroless nickel plating which are alternatively laminated twice or more.
Claim 9
Dependent Claim
45 words
A bump, characterized in that it comprises: an Aℓ electrode (112) formed on a semiconductor element (111); and a palladium layer (114₁) formed on said electrode (112) and a bump material layer (115₁) formed by electroless nickel plating which are alternatively laminated twice or more.
Claim 10
Dependent Claim
24 words
A bump according to claim 7, characterized in that a material of said bump (115₁) comprises nickel, or contains nickel as a major constituent.
Claim 11
Dependent Claim
21 words
A bump according to claim 7, characterized in that an Au layer is formed as the uppermost layer of said bump.
Claim 12
Dependent Claim
21 words
A bump according to claim 7, characterized in that an Sn layer is formed as the uppermost layer of said bump.
Claim 13
Dependent Claim
21 words
A bump according to claim 7, characterized in that a Cu layer is formed as the uppermost layer of said bump.
Claim 14
Dependent Claim
16 words
A bump according to claim 7, characterized in that said semiconductor element is an LSI chip.
References Cited (Backward Citations)
No citation records indexed.
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