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EP0308516A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of determining end point of cleaning in an apparatus for manufacturing semiconductor devices

Assignee: Toshiba Corp
•
Filing: 1988-03-31
•
Granted: —
•
Expires: 2008-03-31
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Abstract

Abstract A method of determining the end point of cleaning in an apparatus for manufacturing semiconductor devices. When the room for treating semiconductor substrates in an apparatus for manufacturing semiconductor devices is cleaned by dry etching using plasma discharge, the impedance between the discharge electrodes or the temperature in the room for treating semiconductor substrates is monitored with the electrodes supplied with a constant current or a constant voltage from a high-frequency power source during the plasma discharge, and an abrupt point in the impedance curve or the temperature curve is detected to determine the end point of cleaning.

Inventors

  • 👤 Yasukazu Mase
  • 👤 Masahiro Abe
  • 👤 Osamu Hirata

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-06 10:23
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/513; H01J37/32532; H01J37/32541; H01J37/32917; H01J37/32935; H01J37/32963; H10P72/06; H10P72/0602

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 89 words
1 . A method of determining an end of cleaning of a semiconductor manufacturing apparatus, wherein when an interior of a semiconductor substrate process chamber of said semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes, an impedance between said electrodes or a temperature in said process chamber is monitored, and an end of cleaning is determined on the basis of a time point at which the impedance or temperature changes abruptly.
Claim 2
Dependent Claim 89 words
1 . A method of determining an end of cleaning of a semiconductor manufacturing apparatus, wherein when an interior of a semiconductor substrate process chamber of said semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes, an impedance between said electrodes or a temperature in said process chamber is monitored, and an end of cleaning is determined on the basis of a time point at which the impedance or temperature changes abruptly.
Claim 3
Dependent Claim 42 words
A method according to claim 1, wherein said semiconductor manufacturing apparatus is a plasma CVD apparatus of a parallel plate electrode type, and a voltage between said electrodes and an injected electrode current are measured to monitor the impedance between said electrodes.
Claim 4
Dependent Claim 39 words
A method according to claim 1, wherein said semiconductor manufacturing apparatus is a plasma CVD apparatus of a parallel plate electrode type, and a temperature sensor is arranged in said reaction chamber to monitor the temperature in said chamber.
Claim 5
Dependent Claim 21 words
A method according to claim 1 , wherein after the end of cleaning is determined, cleaning is completed upon predetermined overetching.

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