EP0307246A2
Expired / Lapsed
EP
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Method of manufacturing superconducting devices
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1988-09-07
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Granted: —
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Expires: 2008-09-07
Abstract
Abstract A method of manufacturing Josephson devices is described. A superconducting ceramics film is deposited on a non-conductive surface and partly spoiled in order to form a barrier film by means of which two superconducting regions are separated. The spoiling is performed by adding a spoiling element into the ceramics film by ion implantation.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 16:17
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H10N60/0716; H10N60/10; H10N60/128; H10N60/0884; H10N60/0912; H10N60/0941; H10N60/12; H10N60/124; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/706; Y10S505/725
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
78 words
A method of producing a superconducting device comprising: forming upon a non-conductive surface a ceramics film of a composition capable of exhibiting superconductivity; and establishing in said ceramics film a superconducting structure having its C plane parallel to said surface by application of thermal treatment to said film; and wherein a spoiling element is introduced into a selected region of said ceramic film in order to change the composition thereof to a composition which does not support superconductivity.
Claim 2
Independent Claim
78 words
A method of producing a superconducting device comprising: forming upon a non-conductive surface a ceramics film of a composition capable of exhibiting superconductivity; and establishing in said ceramics film a superconducting structure having its C plane parallel to said surface by application of thermal treatment to said film; and wherein a spoiling element is introduced into a selected region of said ceramic film in order to change the composition thereof to a composition which does not support superconductivity.
Claim 3
Dependent Claim
37 words
The method of claim 1 wherein the selected region into which the spoiling element is introduced is such as to define in the superconducting device spaced apart superconducting regions separated by a barrier film of non-superconducting material.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein the thickness of said barrier film is such that tunnel currents can flow therethrough.
Claim 5
Independent Claim
18 words
The method of any preceding claim wherein the introduction of said spoiling element is performed by ion implantation.
Claim 6
Independent Claim
16 words
The method of any preceding claim wherein said surface is the surface of a YSZ substrate.
Claim 7
Independent Claim
26 words
The method of any of claims 1 to 4 wherein said surface is formed by coating a silicon semiconductor substrate with an insulating ceramic oxide film.
Claim 8
Dependent Claim
33 words
The method of claim 3 or any of claims 4, 5 and 6 as dependent upon claim 3 wherein the upper surface of said ceramic film is covered by an insulating oxide film.
Claim 9
Dependent Claim
18 words
The method of claim 7 wherein an upper superconducting pattern is formed on said insulating ceramic oxide film.
Claim 10
Dependent Claim
23 words
The method of claim 8 wherein said upper superconducting pattern is formed so as to be in contact with said spaced-apart superconducting regions.
Claim 11
Dependent Claim
25 words
The method of claim 9 wherein said upper superconducting pattern defines two lead electrodes each contacting a respective one of said spaced apart superconducting regions.
Claim 12
Dependent Claim
25 words
The method of claim 10 wherein said upper superconducting pattern further defines a control electrode located above said. barrier film with said insulating film therebetween.
Claim 13
Dependent Claim
37 words
The method of claim 10 or 11 wherein said lead electrodes and/or said control electrode is fabricated by forming a superconducting film and spoiling all but the portion(s) thereof which define said lead electrodes and/or control electrodes.
Claim 14
Independent Claim
86 words
The method of any preceding claim wherein said composition capable of exhibiting superconductivity is consistent with the stoichiometric formula (A 1-x B x ) y Cu z O w where A is one or more elements of Group IIIa of the Japanese Periodic Table, e.g. the rare earth elements or lanthanides, B is one or more alkaline earth metals, i.e. Ba, Sr and Ca, and 0 < x < 1; y = 2.0 - 4.0, z = 1.0 - 4.0 and W = 4.0 - 10.0.
Claim 15
Dependent Claim
31 words
The method of claim 13 wherein said spoiling element is selected from the group comprising Si, Ge, B, Ga, P, Ta, Mg, Al, Fe, Co, Ni, Cr, Ti, Mn and Zr.
Claim 16
Dependent Claim
112 words
The method of claim 14 wherein the composition of said spoiled ceramic film conforms to the stoichiometric formula [(A′ p A˝ 1-p ) 1-x (B′ q B˝ 1-q ) x ] y (Cu r X 1-r ) z O w where A′ is one or more elements of Group IIIa of the Japanese Periodic Table, e.g. the rare earth elements or lanthanides, B′ is one or more alkaline earth metals, l.e. Ba, Sr and Ca, A˝, B˝ and X are at least one of said spoiling elements, and x = 0.1 - 1; y = 2.0 - 4.0, 2.5 - 3.5; z = 1.0 - 4.0, and w = 4.0 - 10.0.
Claim 17
Dependent Claim
42 words
16 A method of manufacturing a superconducting device in accordance with which one or more non-superconducting or less-superconductive regions are defined in a superconducting ceramics material by introduction of a spoiling agent into the ceramics material at said one or more regions.
Claim 18
Dependent Claim
42 words
16 A method of manufacturing a superconducting device in accordance with which one or more non-superconducting or less-superconductive regions are defined in a superconducting ceramics material by introduction of a spoiling agent into the ceramics material at said one or more regions.
Claim 19
Dependent Claim
14 words
A superconducting device manufactured by a method according to any of the preceding claims.
References Cited (Backward Citations)
No citation records indexed.
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