EP0304824A2
Expired / Lapsed
EP
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Thin film mos transistor having pair of gate electrodes opposing across semiconductor layer
Assignee: Sony Corp
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Filing: 1988-08-19
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Granted: —
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Expires: 2008-08-19
Abstract
Abstract A thin film MOS transistor (1) has a construction which can minimize scattering of electron and thus maximize electron mobility for allowing higher speed operation of the transistor. Toward this, the MOS transistor has a thin film form semiconductor layer (5) having a thickness in a range less than or equal to 100 nm, between a pair of gate electrodes (3, 7) which oppose to each other across the semiconductor layer (5).
Inventors
- 👤 Hisao Sony Corporation Hayashi
- 👤 Michio Sony Corporation Negishi
- 👤 Takashi Sony Corporation Noguchi
- 👤 Takefumi Sony Corporation Oshima
- 👤 Yuji Sony Corporation Hayashi
- 👤 Toshikazu Sony Corporation Maekawa
- 👤 Takeshi Sony Corporation Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 23:33
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6757
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
90 words
A thin film MOS transistor comprising: a first gate electrode formed on a substrate; a semiconductor active layer formed over said first gate electrode and opposing to the latter via a first insulating layer and defining source, drain and a channel regions, said channel region being force between said source and drain regions, and which active layer has a thickness in a range less than or equal to 100 nm; and a second gate electrode formed over said active layer and opposing to the latter via a second insulating layer.
Claim 2
Dependent Claim
90 words
A thin film MOS transistor comprising: a first gate electrode formed on a substrate; a semiconductor active layer formed over said first gate electrode and opposing to the latter via a first insulating layer and defining source, drain and a channel regions, said channel region being force between said source and drain regions, and which active layer has a thickness in a range less than or equal to 100 nm; and a second gate electrode formed over said active layer and opposing to the latter via a second insulating layer.
Claim 3
Dependent Claim
23 words
A thin film MOS transistor as set forth in claim 1, wherein said second insulating layer is thinner than said first insulating layer.
Claim 4
Dependent Claim
31 words
A thin film MOS transistor as set forth in claim 1, wherein said first and second gate electrodes and said channel region of said active layer are arranged substantially in alignment.
Claim 5
Dependent Claim
20 words
A thin film MOS transistor as set forth in claim 1, wherein said active layer is formed of polycrystalline silicon.
Claim 6
Dependent Claim
27 words
A thin film MOS transistor as set forth in claim 1, wherein said first and second gate electrodes are arranged at opposite sides of said active layer.
Claim 7
Dependent Claim
33 words
A thin film MOS transistor as set forth in claim 1, wherein said first gate electrode is so arranged as to establish substantially smaller input capacity than that established by said second electrode.
Claim 8
Dependent Claim
32 words
A thin film MOS transistor as set forth in claim 1, wherein said first gate electrode has a first gate length shorter than a second gate length of said second gate electrode.
Claim 9
Dependent Claim
23 words
A thin film MOS transistor as set forth in claim 7, wherein said second insulating layer is thinner than said first insulating layer.
Claim 10
Dependent Claim
31 words
A thin film MOS transistor as set forth in claim 7, wherein said first and second gate electrodes and said channel region of said active layer are arranged substantially in alignment.
Claim 11
Dependent Claim
20 words
A thin film MOS transistor as set forth in claim 7, wherein said active layer is formed of polycrystalline silicon.
Claim 12
Dependent Claim
27 words
A thin film MOS transistor as set forth in claim 7, wherein said first and second gate electrodes are arranged at opposite sides of said active layer.
Claim 13
Dependent Claim
33 words
A thin film MOS transistor as set forth in claim 7, wherein said first gate electrode is so arranged as to establish substantially smaller input capacity than that established by said second electrode.
Claim 14
Dependent Claim
134 words
A thin film MOS transistor comprising: a first gate electrode formed on a substrate and having a first gate length; a second gate electrode opposing to said first gate electrode, said second gate electrode having a second gate length longer than said first length of said first gate electrode, said second gate electrode being arranged substantially in alignment with said first electrode; and a semiconductor active layer formed between said first and second gate electrodes and defining source, drain and a channel regions, said channel region being defined between said source and drain regions and opposing to said first gate electrode via a first insulating layer and to said second gate electrode via a second insulating layer, and said active layer having a thickness in a range less than or equal to 100 nm.
Claim 15
Dependent Claim
134 words
A thin film MOS transistor comprising: a first gate electrode formed on a substrate and having a first gate length; a second gate electrode opposing to said first gate electrode, said second gate electrode having a second gate length longer than said first length of said first gate electrode, said second gate electrode being arranged substantially in alignment with said first electrode; and a semiconductor active layer formed between said first and second gate electrodes and defining source, drain and a channel regions, said channel region being defined between said source and drain regions and opposing to said first gate electrode via a first insulating layer and to said second gate electrode via a second insulating layer, and said active layer having a thickness in a range less than or equal to 100 nm.
Claim 16
Dependent Claim
23 words
A thin film MOS transistor as set forth in claim 13, wherein said first insulating layer is thicker than said second insulating layer.
Claim 17
Dependent Claim
31 words
A thin film MOS transistor as set forth in claim 13, wherein said first and second gate electrodes and said channel region of said active layer are arranged substantially in alignment.
Claim 18
Dependent Claim
20 words
A thin film MOS transistor as set forth in claim 13, wherein said active layer is formed of polycrystalline silicon.
Claim 19
Dependent Claim
27 words
A thin film MOS transistor as set forth in claim 13, wherein said first and second gate electrodes are arranged at opposite sides of said active layer.
Claim 20
Dependent Claim
33 words
A thin film MOS transistor as set forth in claim 13, wherein said first gate electrode is so arranged as to establish substantially smaller input capacity than that established by said second electrode.
Claim 21
Dependent Claim
117 words
A thin film MOS transistor comprising: a first gate electrode formed on a substrate and having a first gate length; a second gate electrode opposing to said first gate electrode, said second gate electrode having a second gate length longer than said first length of said first gate electrode, said second gate electrode being arranged substantially in alignment with said first electrode; and a semiconductor active layer formed between said first and second gate electrodes and defining source, drain and a channel regions, said channel region being defined between said source and drain regions and opposing to said first gate electrode via a first insulating layer and to said second gate electrode via a second insulating layer.
Claim 22
Dependent Claim
117 words
A thin film MOS transistor comprising: a first gate electrode formed on a substrate and having a first gate length; a second gate electrode opposing to said first gate electrode, said second gate electrode having a second gate length longer than said first length of said first gate electrode, said second gate electrode being arranged substantially in alignment with said first electrode; and a semiconductor active layer formed between said first and second gate electrodes and defining source, drain and a channel regions, said channel region being defined between said source and drain regions and opposing to said first gate electrode via a first insulating layer and to said second gate electrode via a second insulating layer.
Claim 23
Dependent Claim
23 words
A thin film MOS transistor as set forth in claim 19, wherein said first insulating layer is thicker than said second insulating layer.
Claim 24
Dependent Claim
31 words
A thin film MOS transistor as set forth in claim 20, wherein said first and second gate electrodes and said channel region of said active layer are arranged substantially in alignment.
Claim 25
Dependent Claim
20 words
A thin film MOS transistor as set forth in claim 21, wherein said active layer is formed of polycrystalline silicon.
Claim 26
Dependent Claim
27 words
A thin film MOS transistor as set forth in claim 22, wherein said first and second gate electrodes are arranged at opposite sides of said active layer.
Claim 27
Dependent Claim
33 words
A thin film MOS transistor as set forth in claim 23, wherein said first gate electrode is so arranged as to establish substantially smaller input capacity than that established by said second electrode.
Claim 28
Dependent Claim
26 words
A thin film MOS transistor as set forth in claim 24, wherein the thickness of said active layer is less than or equal to 100 nm.
References Cited (Backward Citations)
No citation records indexed.
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