EP0304811A1
Expired / Lapsed
EP
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MOS transistor
Assignee: ABB AB
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Filing: 1988-08-19
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Granted: —
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Expires: 2008-08-19
Abstract
Abstract A MOS transistor is formed in a silicon layer (3) applied on an insulating base (1). The channel region (24,23) of the transistor has a weakly doped region (24) located nearest the surface of the layer and a more heavily doped region (23) nearest the base. The latter region extends in under the source region (22) of the transistor and is connected to the source contact of the transistor via a highly doped region (21) of the same conduction type. The more heavily doped region (23) is doped with a doping dose of at least 2 x 10¹² cm⁻².
Inventors
- 👤 Per Svedberg
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 17:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D86/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
164 words
A MOS transistor (3) formed in a semiconductor layer, arranged on an insulating base (1), with source and drain regions (22,20) of a first conduction type (N) which are separated by a channel region (24,23) of a second conduction type (P), the channel region having a more heavily doped part (23) nearest the base and a more weakly doped part (24) nearest the surface of the semiconductor layer, with a source contact (28) connected to the source region, with a drain contact (14) connected to the drain region, and with a control electrode (27) arranged on top of the channel region and separated therefrom by an insulating layer (26), characterized in that the transistor comprises a first region (23) of said second conduction type which extends from the channel region and in under the source region, and that said first region and the more heavily doped part of the channel region are doped with a doping dose of at least 2 x 10¹² cm⁻².
Claim 2
Dependent Claim
164 words
A MOS transistor (3) formed in a semiconductor layer, arranged on an insulating base (1), with source and drain regions (22,20) of a first conduction type (N) which are separated by a channel region (24,23) of a second conduction type (P), the channel region having a more heavily doped part (23) nearest the base and a more weakly doped part (24) nearest the surface of the semiconductor layer, with a source contact (28) connected to the source region, with a drain contact (14) connected to the drain region, and with a control electrode (27) arranged on top of the channel region and separated therefrom by an insulating layer (26), characterized in that the transistor comprises a first region (23) of said second conduction type which extends from the channel region and in under the source region, and that said first region and the more heavily doped part of the channel region are doped with a doping dose of at least 2 x 10¹² cm⁻².
Claim 3
Dependent Claim
45 words
MOS transistor according to Claim 1, characterized in that it comprises a second region (21) of said second conduction type (P), which is connected to said first region (23) and forms the surface of the semiconductor layer on the source side of the channel region.
Claim 4
Dependent Claim
22 words
MOS transistor according to Claim 2, characterized in that said second region (21) is more heavily doped than said first region (23).
Claim 5
Dependent Claim
27 words
MOS transistor according to any of Claims 2 or 3, characterized in that the source contact (28) of the transistor is connected to said second region (21).
Claim 6
Dependent Claim
65 words
MOS transistor according to any of the preceding Claims, in which the channel region and control electrode of the transistor extend to the edge of the semiconductor layer, characterized in that it comprises a third region (21a,21b), arranged at the edge of the semiconductor layer, of said second conduction type (P), said region being connected to the channel region and to said first region (23).
Claim 7
Dependent Claim
22 words
MOS transistor according to Claim 5, characterized in that the third region (21a,21b) is more heavily doped than said first region (23).
Claim 8
Dependent Claim
25 words
MOS transistor according to Claims 2 and 5, characterized in that said second region (21) and said third region (21a,21b) constitute one single coherent region.
References Cited (Backward Citations)
SE402035B
Cited
DE2527621B2
Cited
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