EP0304335A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Photosensor device
Assignee: Canon Inc
•
Filing: 1988-08-19
•
Granted: —
•
Expires: 2008-08-19
Abstract
Abstract A photosensor device, comprises a semiconductor layer formed on an insulating substrate and composed of first semiconductor areas (e.g. 3, 13) of one conductivity type or intrinsic type and second semiconductor areas (e.g. 4, 24, 14) of the other conductivity type. A horizontal type photosensor is formed by a junction between said first semiconductor areas and second semiconductor areas while a field effect transistor constituting a processing circuit for the sensor signal is simultaneously formed with a source and a drain composed of said second semiconductor areas (e.g. 14, 24) and with a channel area composed of said first semi-conductor area (e.g. 13) positioned between said source and drain.
Inventors
- 👤 Hidemasa Mizutani
- 👤 Shigeki Kondo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 22:45
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F30/00; H10F30/20; H10F30/21; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
98 words
A photosensor device, comprising a semiconductor layer formed on an insulating substrate and composed of first semiconductor area of one conductivity type or intrinsic type and second semiconductor areas of the other conductivity type, wherein a horizontal type photosensor is formed by a junction between said first semiconductor areas and second semiconductor area while a filed effect transistor constituting a processing circuit for the sensor signal is simultaneously formed with a source and a drain composed of said second semiconductor areas and with a channel area composed of said first semiconductor area positioned between said source and drain.
Claim 2
Dependent Claim
98 words
A photosensor device, comprising a semiconductor layer formed on an insulating substrate and composed of first semiconductor area of one conductivity type or intrinsic type and second semiconductor areas of the other conductivity type, wherein a horizontal type photosensor is formed by a junction between said first semiconductor areas and second semiconductor area while a filed effect transistor constituting a processing circuit for the sensor signal is simultaneously formed with a source and a drain composed of said second semiconductor areas and with a channel area composed of said first semiconductor area positioned between said source and drain.
Claim 3
Dependent Claim
23 words
A photosensor device according to Claim 1, wherein the light receiving portion of said photosensor is constructed as a pattern of plural stripes.
Claim 4
Dependent Claim
26 words
A photosensor device according to Claim 1, wherein said first semiconductor layer is composed of polycrystalline silicon with a grain size of 0.5 µm or larger.
Claim 5
Dependent Claim
20 words
A photosensor device according to Claim 1, wherein the base of said phototransistor is constructed in a rectangular waving form.
Claim 6
Dependent Claim
30 words
A photosensor device according to Claim 4, wherein the semiconductor layer formed on the insulating substrate is composed of polycrystalline silicon with a grain size of 0.5 µm or larger.
Claim 7
Dependent Claim
51 words
A photosensor device comprising a layer (2) of semiconductor on an insulating substrate (1), a lateral photosensor (7) and a lateral read-out switch (8) both being formed in the layer of semiconductor and both comprising an area of intrinsic or first conductivity type semiconductor and an area of second type semiconductor.
Claim 8
Dependent Claim
51 words
A photosensor device comprising a layer (2) of semiconductor on an insulating substrate (1), a lateral photosensor (7) and a lateral read-out switch (8) both being formed in the layer of semiconductor and both comprising an area of intrinsic or first conductivity type semiconductor and an area of second type semiconductor.
Claim 9
Dependent Claim
37 words
A photosensor device according to claim 6 further comprising a capacitor (9) between the lateral photosensor (7) and the lateral read-out switch (8), the capacitor including an area of second conductivity type in the layer of semiconductor.
Claim 10
Dependent Claim
110 words
A photosensor device according to claim 6 or claim 7 in which the lateral photosensor (7) comprises at least a portion of a first semiconductor region (3) of intrinsic or said first conductivity type and a portion (4) of a second semiconductor region (4, 14) of said second conductivity type, and the lateral read-out switch (8) comprises a portion (14) of said second semiconductor region (4, 14), a third semiconductor region (13) of intrinsic or said first conductivity type, and at least a portion of a fourth semiconductor region (24) of said second conductivity type, said first, second, third and fourth semiconductor regions all being formed in said semiconductor layer.
Claim 11
Dependent Claim
26 words
A photosensor device according to claim 8 as dependent on claim 7, in which the capacitor (9) includes a portion (34) of said second semiconductor region.
Claim 12
Dependent Claim
21 words
A photosensor device according to any one of claims 6 to 9 in which the lateral read-out switch comprises an IGFET.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.