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EP0303083A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Barrier layer containing conductive articles

Assignee: Eastman Kodak Co
•
Filing: 1988-07-23
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Granted: —
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Expires: 2008-07-23
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Abstract

Abstract A circuit element is disclosed comprised of a substrate and an electrically conductive layer located on the substrate. The electrically conductive layer is comprised of a crystalline rare earth alkaline earth copper oxide. The substrate is formed of a material which increases the electrical resistance of the conductive layer when in contact with the rare earth alkaline earth copper oxide during crystalliza­tion of the latter to an electrically conductive form. A barrier layer is interposed between the electrically conductive layer and the substrate. The barrier layer contains magnesium, a group IVA metal, or a platinum group metal, either in an elemental state or in the form of an oxide or silicide. The circuit element is produced by first forming the barrier layer on the substrate followed by coating conductor precursor metal-ligand compounds of each of rare earth, alkaline earth, and copper containing at least one thermally volatilizable ligand and heating the precursor metal-ligand compounds in the presence of oxygen to produce a crystalline rare earth alkaline earth copper oxide electrically conductive layer.

Inventors

  • 👤 John Alfonse C/O Eastman Kodak Co. Agostinelli
  • 👤 Jose Manuel C/O Eastman Kodak Co. Mir
  • 👤 Gustavo Roberto C/O Eastman Kodak Co. Paz-Pujalt
  • 👤 Mark C/O Eastman Kodak Co. Lelental
  • 👤 Ralph Alexander Iii C/Oeastman Kodak Co. Nicholas

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 09:15
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632

Claims Analysis

Total Claims: 25
Claim 1
Independent Claim 118 words
A circuit element comprised of a substrate and an electrically conductive layer located on the substrate characterized in that the electrically conductive layer is comprised of a crystalline rare earth alkaline earth copper oxide, the substrate is formed of a material which increases the electrical resistance of the conductive layer when in contact with the rare earth alkaline earth copper oxide during its crystallization to an electrically conductive form, a barrier layer is interposed between the electrically conductive layer and the substrate, the barrier layer containing a metal in its elemental form or in the form of an oxide, silicide or silicate chosen from the group consisting of magnesium, a group IVA metal, or a platinum group metal.
Claim 2
Dependent Claim 118 words
A circuit element comprised of a substrate and an electrically conductive layer located on the substrate characterized in that the electrically conductive layer is comprised of a crystalline rare earth alkaline earth copper oxide, the substrate is formed of a material which increases the electrical resistance of the conductive layer when in contact with the rare earth alkaline earth copper oxide during its crystallization to an electrically conductive form, a barrier layer is interposed between the electrically conductive layer and the substrate, the barrier layer containing a metal in its elemental form or in the form of an oxide, silicide or silicate chosen from the group consisting of magnesium, a group IVA metal, or a platinum group metal.
Claim 3
Dependent Claim 17 words
A circuit element according to claim 1 further characterized in that the substrate is comprised of glass.
Claim 4
Dependent Claim 18 words
A circuit element according to claim 1 further characterized in that the substrate is comprised of a semiconductor.
Claim 5
Dependent Claim 18 words
A circuit element according to claim 3 further characterized in that the semiconductor substrate is comprised of silicon.
Claim 6
Dependent Claim 31 words
A circuit element according to any one of claims 1 to 4 inclusive further characterized in that the barrier layer contains a group IVA metal silicide or a platinum group silicide.
Claim 7
Dependent Claim 22 words
A circuit element according to any one of claims 1 to 4 inclusive further characterized in that the barrier contains magnesium silicate.
Claim 8
Dependent Claim 37 words
A circuit element according to any one of claims 1 to 4 further characterized in that the barrier layer contains magnesium or a group IVA metal in its elemental form or in the form of an oxide.
Claim 9
Dependent Claim 27 words
A circuit element according to claim 7 further characterized in that the substrate is comprised of a metal oxide other than that contained in the barrier layer.
Claim 10
Dependent Claim 17 words
A circuit element according to claim 8 further characterized in that the substrate is comprised of alumina.
Claim 11
Dependent Claim 21 words
A circuit element according to claim 8 further characterized in that the barrier layer consists essentially of magnesium or magnesium oxide.
Claim 12
Dependent Claim 20 words
A circuit element according to claim 8 further characterized in that the barrier layer consists essentially of zirconium or zirconia.
Claim 13
Dependent Claim 29 words
A circuit element according to any one of claims 1 to 11 inclusive further characterized in that the conductive layer exhibits a superconducting transition temperature of at least 30°K.
Claim 14
Dependent Claim 45 words
A circuit element according to any one of claims 1 to 12 inclusive further characterized in that greater than 45 percent by volume of the conductive layer consists essentially of a rare earth alkaline earth copper oxide which is in a tetragonal K₂NiF₄ crystalline form.
Claim 15
Dependent Claim 25 words
A circuit element according to claim 13 further characterized in that the rare earth is lanthanum and the alkaline earth metal is barium or strontium.
Claim 16
Dependent Claim 43 words
A circuit element according to any one claims 1 to 12 inclusive further characterized in that greater than 45 percent by volume of the conductive layer consists essentially of a rare earth alkaline earth copper oxide which is in an R₁A₂C₃ crystalline phase.
Claim 17
Dependent Claim 42 words
A circuit element according to claim 15 further characterized in that the rare earth alkaline earth copper oxide consists of yttrium as the rare earth and barium, optionally in combination with at least one of strontium and calcium, as the alkaline earth.
Claim 18
Dependent Claim 32 words
A circuit element according to any one of claims 1 to 16 inclusive further characterized in that the barrier layer is a thin film having a thickness of less than 5 µm.
Claim 19
Dependent Claim 169 words
A process of forming a circuit element according to any one of claims 1 to 17 inclusive including coating a conductor precursor on a substrate and converting the conductor precursor to an electrical conductor, characterized by the steps of choosing, as the conductor precursor, metal-ligand compounds of each of rare earth, alkaline earth, and copper containing at least one thermally volatilizable ligand, heating the precursor metal-ligand compounds in the presence of oxygen to produce a crystalline rare earth alkaline earth copper oxide electrically conductive layer, choosing, as the substrate, a material which increases the electrical resistance of the conductive layer when in contact with the rare earth alkaline earth copper oxide during its crystallization to an electrically conductive form, and prior to coating the conductor precursor on the support forming on the substrate a barrier layer containing a metal in its elemental form or in the form of an oxide, silicide or silicate chosen from the group consisting of magnesium, a group IVA metal, or a platinum group metal.
Claim 20
Dependent Claim 82 words
A process according to claim 18 further characterized in that the electrical conductor is formed by coating onto the barrier layer a solution consisting essentially of a volatilizable film forming solvent and metal-ligand compounds of each of rare earth, alkaline earth, and copper containing at least one thermally volatilizable ligand and removing the solvent and ligands from the substrate, this step including heating in the presence of oxygen to form an amorphous rare earth alkaline earth copper oxide coating on the substrate.
Claim 21
Dependent Claim 43 words
A process according to claim 19 further characterized in that the amorphous rare earth alkaline earth copper oxide is converted to a crystalline coating by heating the amorphous coating to a temperature at which rare earth alkaline earth copper oxide crystals are formed.
Claim 22
Dependent Claim 69 words
A process according to any one of claims 18 to 20 further characterized in that the barrier layer is formed by coating onto the substrate a solution consisting essentially of a volatilizable film forming solvent and at least one zirconium-ligand compound containing at least one thermally volatilizable ligand and removing the solvent and ligands from the substrate, this step including heating in the presence of oxygen to form zirconia.
Claim 23
Dependent Claim 18 words
A process according to claim 21 further characterized in that the zirconia is formed in a microcrystalline form.
Claim 24
Dependent Claim 18 words
A process according to claim 21 further characterized in that the zirconia is formed in an amorphous form.
Claim 25
Dependent Claim 37 words
A process according to any one of claims 21 to 23 inclusive further characterized in that the steps of solution coating and removing the solvent and ligands are repeated to obtain a barrier layer of increased thickness.

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