EP0301893A2
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EP
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A light-emitting semiconductor device
Assignee: Shin-Etsu Handotai Co Ltd
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Filing: 1988-07-29
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Granted: —
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Expires: 2008-07-29
Abstract
Abstract In a light-emitting semiconductor device of double heterostructure consisting of GaAlAs mixed crystal, a film of Ga 1-y Al y As having a thickness less than 1 µm is sandwiched in between a p-type clad layer of mixed crystal Ga 1-x1 Al x1 As and in an n-type clad layer of mixed crystal Ga 1-z Al z As, whereby the wavelength of the emitted light is stabilized, and the thyristor phenomenon is curbed in the n-type clad layer, and at the same time the p-type carrier concentration is increased in the growth layer or in the substrate.
Inventors
- 👤 Masato C/O Semiconductor Laboratory Of Yamada
- 👤 Shinji C/O Semiconductor Laboratory Of Orimo
- 👤 Takao C/O Semiconductor Laboratory Of Takenaka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 14:14
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/8215; H10H20/811; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
146 words
A light-emitting semiconductor device of a multilayer structure consisting of the following layers accumulated in the following order: a highly-doped substrate or a growth layer of a p-type mixed crystal Ga 1-x2 Al x2 As with carrier concentration p₂, a clad layer of Ga 1-x1 Al x1 As with carrier concentration p₁, a non-dope active layer of mixed crystal Ga 1-y Al y As, and an n-type mixed crystal Ga 1-z Al z As-clad layer with carrier concentration n; where the compositions of the mixed crystals are selected as follows: y <x₁, y <z, 0<x₁<1, 0≦x₂<1, 0<y <1, 0<z <1; and the parameters p₁, p₂, and n are restricted, respectively, within the following limits: 1 × 10¹⁷cm⁻³ < n <5 × 10¹⁷ cm⁻³ 1 × 10¹⁶cm⁻³ < p₁ <3 × 10¹⁷ cm⁻³ 5 × 10¹⁷ cm⁻³ < p₂ and at the same time p₁ < n.
Claim 2
Dependent Claim
146 words
A light-emitting semiconductor device of a multilayer structure consisting of the following layers accumulated in the following order: a highly-doped substrate or a growth layer of a p-type mixed crystal Ga 1-x2 Al x2 As with carrier concentration p₂, a clad layer of Ga 1-x1 Al x1 As with carrier concentration p₁, a non-dope active layer of mixed crystal Ga 1-y Al y As, and an n-type mixed crystal Ga 1-z Al z As-clad layer with carrier concentration n; where the compositions of the mixed crystals are selected as follows: y <x₁, y <z, 0<x₁<1, 0≦x₂<1, 0<y <1, 0<z <1; and the parameters p₁, p₂, and n are restricted, respectively, within the following limits: 1 × 10¹⁷cm⁻³ < n <5 × 10¹⁷ cm⁻³ 1 × 10¹⁶cm⁻³ < p₁ <3 × 10¹⁷ cm⁻³ 5 × 10¹⁷ cm⁻³ < p₂ and at the same time p₁ < n.
References Cited (Backward Citations)
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