Thin film transistor array
Abstract
Abstract A thin film transistor array which comprises an insulating substrate (1); gate electrodes (2) formed on one surface of the substrate; a first insulating layer (6) made of anodically oxidized film and formed on the substrate so as to overlay each of the gate electrodes; a second insulating layer (7) and a semiconductor layer (8) positioned one above the other and formed so as to overlay the first insulating layer (6) with the second insulating layer (7) intervening between the semiconductor layer (8) and the first insulating layer (6); and source (11) and drain (13) electrodes formed on the semiconductor layer (8). Each of the gate electrode (2) is of a double-layered structure including a first metal layer (4) made of metal having a high electroconductivity and a second metal layer (5) made of metal having a high property of being anodically oxidized.
Inventors
- 👤 Hirohisa Tanaka
Bibliographic Details
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