EP0300569A1
Expired / Lapsed
EP
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Method of manufacturing a semiconductor device having a planarized construction
Assignee: Koninklijke Philips NV
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Filing: 1988-07-14
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Granted: —
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Expires: 2008-07-14
Abstract
Abstract A method of manufacturing a semiconductor device, in which a depression (1,2,3) in a surface (4) of a semiconductor substrate (5) is filled by covering it with a preplanarized filling layer (8,19,22) and a further planarization layer (9), after which the substrate (5) is brought into contact with an etchant, in which both layers (8,19,22) and (9) are etched at substantially the same rate. According to the invention, the preplanarized filling layer (8,19,22) is formed by covering the surface (4) with a layer of filling material (6) and then removing it beside the depression (1,2,3) over part of its thickness. Thus, the depression (1,2,3) is filled homogeneously in a comparatively simple manner with material of the filling layer (6).
Inventors
- 👤 Paulus Antonius Van Der Plas
- 👤 Reinier De Werdt
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 05:58
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
93 words
A method of manufacturing a semiconductor device, in which a depression in a surface of a semiconductor substrate is filled by covering it with a preplanarized layer and with a further planarization layer, after which the substrate is brought into contact with an etchant, in which the planarization layer and the preplanarized filling layer are etched at substantially the same rate, characterized in that the preplanarized filling layer is formed by covering the surface with a layer of filling material and by then removing it beside the depression over part of its thickness.
Claim 2
Independent Claim
93 words
A method of manufacturing a semiconductor device, in which a depression in a surface of a semiconductor substrate is filled by covering it with a preplanarized layer and with a further planarization layer, after which the substrate is brought into contact with an etchant, in which the planarization layer and the preplanarized filling layer are etched at substantially the same rate, characterized in that the preplanarized filling layer is formed by covering the surface with a layer of filling material and by then removing it beside the depression over part of its thickness.
Claim 3
Dependent Claim
38 words
A method as claimed in Claim 1, characterized in that the layer of filling material is etched until the layer of filling material reaches beside the depression substantially the same level as at the area of the depression.
Claim 4
Dependent Claim
39 words
A method as claimed in Claim 2, characterized in that the layer of filling material is formed with a top layer which can be selectively etched away and has a thickness substantially equal to the depth of the depression.
Claim 5
Dependent Claim
40 words
A method as claimed in Claim 3, characterized in that the top layer is transferred to an intermediate layer that can be selectively etched away and is manufactured from the same material as the filling layer under the intermediate layer.
Claim 6
Independent Claim
37 words
A method as claimed in any one of the preceding Claims, characterized in that during the step of etching the layer of filling material a photoresist mask is used which, viewed in projection, lies within the depression.
Claim 7
Independent Claim
35 words
A method as claimed in any one of the preceding Claims, characterized in that a layer of filling material is provided having an overall thickness which is at least twice the depth of the depression.
Claim 8
Independent Claim
49 words
A method as claimed in any one of the preceding Claims, characterized in that the layer of filling material is formed at least in part by heating the substrate to a temperature of 600 to 800°C in a flow of gas only comprising tetraethyl orthosilicate and an inert gas.
References Cited (Backward Citations)
US4038110A
Cited
FR2599892A1
Cited
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