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EP0289250A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Phase-shift distributed-feedback semiconductor laser

Assignee: NTT Inc
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Filing: 1988-04-25
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Granted: —
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Expires: 2008-04-25
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Abstract

Abstract A phase-shift distributed-feedback semiconductor laser includes an electrode (6,7) for injecting a current to the entire area of the semiconductor laser. The laser also includes portions (4a min ,4a) each for shifting an optical phase by a 1/4 wavelength at at least three locations, the number of which is an odd number. These portions (4a min ,4a) are formed in a light propagation direction of the phase-shift distributed-feedback semiconductor laser structure.

Inventors

  • 👤 Akira Sugimura
  • 👤 Tatsuya Kimura

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 16:16
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/06; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06258; H01S5/124; H01S5/1246

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 61 words
A phase-shift distributed-feedback semiconductor laser including an electrode for injecting a current to an entire area of said semiconductor laser, comprising portions each for shifting an optical phase by a 1/4 wavelength at at least three locations, the number of which is an odd number, said portions being formed in a light propagation direction of a phase-shift distributed-feedback semiconductor laser structure.
Claim 2
Dependent Claim 61 words
A phase-shift distributed-feedback semiconductor laser including an electrode for injecting a current to an entire area of said semiconductor laser, comprising portions each for shifting an optical phase by a 1/4 wavelength at at least three locations, the number of which is an odd number, said portions being formed in a light propagation direction of a phase-shift distributed-feedback semiconductor laser structure.
Claim 3
Dependent Claim 55 words
A laser according to claim 1, wherein said phase-shift distributed-feedback semiconductor laser structure comprises a plurality of units each having said 1/4 wavelength phase-shift portion at a central portion thereof, and a 1/4 wavelength phase-shift connecting portion for connecting said units so as to shift the optical phase by a 1/4 wavelength between said units.
Claim 4
Dependent Claim 38 words
A laser according to claim 1, wherein said 1/4 wavelength phase-shift portion is constituted by a junction plane where a phase of a diffraction grating constituting said phase-shift distributed-feedback semiconductor laser structure is shifted by a 1/2 wavelength.
Claim 5
Dependent Claim 27 words
A laser according to claim 1, wherein said 1/4 wavelength phase-shift portion is formed by partially removing a diffraction grating constituting said phase-shift distributed-feedback semiconductor laser structure.
Claim 6
Dependent Claim 56 words
A laser according to claim 1, wherein said respective 1/4 wavelength phase-shift portions are formed by combining a junction plane where a phase of a diffraction grating constituting said phase-shift distributed-feedback semiconductor laser is shifted by a 1/2 wavelength and a portion obtained by partially removing said diffraction grating constituting said phase-shift distributed-feedback semiconductor laser structure.
Claim 7
Dependent Claim 27 words
A laser according to claim 1, including said 1/4 wavelength phase-shift portions, and wherein said electrode is formed on an entire surface along the light propagation direction.
Claim 8
Dependent Claim 81 words
A laser according to claim 1, wherein said 1/4 wavelength phase-shift portions are three in number, and further comprising four separate electrodes divided by said 1/4 wavelength phase-shift portions, and a common electrode formed to oppose said four separate electrodes, two inner ones of said four separate electrodes being applied with a modulation current having a polarity opposite to that applied to two outer ones of said four separate electrodes but the same magnitude as that of said two outer electrodes.

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