EP0288166A2
Expired / Lapsed
EP
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Process for selective formation of III - V group compound film
Assignee: Canon Inc
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Filing: 1988-03-28
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Granted: —
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Expires: 2008-03-28
Abstract
Abstract A process for selective formation of a III-V group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group III atoms of Periodic Table and a starting material for supplying the group V atoms of Periodic Table, on a substrate having a non-nucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) with a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and a large area sufficient for a number of nuclei to be formed, and forming selectlvely a III-V group compound film only on said nucleation surface (S NDL ).
Inventors
- 👤 Hiroyuki Tokunaga
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 17:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10P14/24; H10P14/27; H10P14/271; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3422; Y; Y10; Y10S; Y10S117/00; Y10S117/913
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
121 words
A process for selective formation of a III-V group compound film, which comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group III atoms of periodic Table and a starting material for supplying the group V atoms of Periodic Table, on a substrate having a non-nucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) with a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and a large area sufficient for a number of nuclei to be formed, and forming selectively a III-V group compound film only on said nucleation surface (S NDL ).
Claim 2
Dependent Claim
121 words
A process for selective formation of a III-V group compound film, which comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group III atoms of periodic Table and a starting material for supplying the group V atoms of Periodic Table, on a substrate having a non-nucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) with a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and a large area sufficient for a number of nuclei to be formed, and forming selectively a III-V group compound film only on said nucleation surface (S NDL ).
Claim 3
Dependent Claim
29 words
A process for selective formation of a III-V group compound film according to Claim 1, wherein said III-V group compound film is a binary system III-V group compound film.
Claim 4
Dependent Claim
36 words
A process for selective formation of a III-V group compound film according to Claim 1, wherein said III-V group compound film is a multi-component system mixed crystal III-V group compound film of ternary system or more.
Claim 5
Dependent Claim
37 words
A process for selective formation of a III-V group compound film according to Claim 1, wherein the nucleation surface (S NDL ) is formed by ion implantation onto a part of said non-nucleation surface (S NDS ).
Claim 6
Dependent Claim
46 words
A process for selective formation of a III-V group compound film according to Claim 1, wherein the nucleation surface is formed by deposition a nucleation surface forming substance having a large nucleation density (ND L ) on a part of said non-nucleation surface (S NDS ).
Claim 7
Dependent Claim
26 words
A process for selective formation of a III-V group compound film according to Claim 1, wherein said non-nucleation surface is comprised of an amorphous insulating material.
Claim 8
Dependent Claim
22 words
A process for selective formation of a III-V group compound film according to Claim 6, wherein said amorphous insulating material is SiO₂.
Claim 9
Dependent Claim
30 words
A process for selective formation of a III-V group compound film according to Claim 5, wherein said non-nucleation surface and said nucleation surface are constituted of SiO₂ and Al₂O₃, respectively.
Claim 10
Dependent Claim
25 words
A process for selective formation of a III-V group compound film according to Claim 1, wherein said compound film forming treatment is the MOCVD method.
References Cited (Backward Citations)
No citation records indexed.
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