EP0286272A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
High contrast, positive photoresist developer containing alkanolamine
Assignee: CNA Holdings LLC
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Filing: 1988-03-23
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Granted: —
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Expires: 2008-03-23
Abstract
Abstract Compositions and methods for developing quinone diazide positive-working photoresists. The compositions consist essentially of an aqueous solution of a tetraalkylammonium hydroxide and an adjunct having a structure selected from: <CHEM> wherein n is 0 or 1; m is 1 or 2; and each R<1> and R<2> is independently selected from hydrogen, methyl, or ethyl, but in Structure I the two R<2>'s are not both ethyl. The addition of this adjunct prevents the formation of irregular deposits on the edges of unexposed portions of the photoresist lines when the photoresist is developed, increases the uniformity of line widths of photoresist lines developed according to the present invention, and increases the process latitude of the developer.
Inventors
- 👤 Richard M. Lazarus
- 👤 Kenneth L. Bell
- 👤 Carla M. Bauer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 14:08
CPC Classifications
G; G03; G03C; G03C7/00; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/32; G03F7/322
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
124 words
A composition for developing an image-wise exposed quinone diazide positive-working photoresist, consisting essentially of an aqueous solution of: A. at least one tetraalkylammonium hydroxide, present in an amount effective to enable said composition to develop said photoresist; and B. at least one adjunct having a structure selected from: wherein n is 0 or 1; m is 1 or 2; each R¹ and R² is independently selected from hydrogen, methyl or ethyl, but in Structure I the two R²'s are not both ethyl; and said adjunct is present in an amount sufficient to increase the C p value and/or the process latitude of the composition or to reduce formation of irregular deposits on the edges of unexposed portions of said photoresist while it is developed.
Claim 2
Dependent Claim
124 words
A composition for developing an image-wise exposed quinone diazide positive-working photoresist, consisting essentially of an aqueous solution of: A. at least one tetraalkylammonium hydroxide, present in an amount effective to enable said composition to develop said photoresist; and B. at least one adjunct having a structure selected from: wherein n is 0 or 1; m is 1 or 2; each R¹ and R² is independently selected from hydrogen, methyl or ethyl, but in Structure I the two R²'s are not both ethyl; and said adjunct is present in an amount sufficient to increase the C p value and/or the process latitude of the composition or to reduce formation of irregular deposits on the edges of unexposed portions of said photoresist while it is developed.
Claim 3
Dependent Claim
13 words
A composition according to claim 1, wherein said tetraalkylammonium hydroxide is tetramethylammonium hydroxide.
Claim 4
Dependent Claim
21 words
A composition according to claim 1 or claim 2 which contains from 0.7 to 2.0 weight percent of said tetraalkylammonium hydroxide.
Claim 5
Dependent Claim
18 words
A composition according to claim 3, which contains from 0.8 to 1.6 weight percent of said tetraalkylammonium hydroxide.
Claim 6
Dependent Claim
18 words
A composition according to claim 4, which contains from 0.9 to 1.1. weight percent of said tetraalkylammonium hydroxide.
Claim 7
Dependent Claim
12 words
A composition according to any preceding claim wherein said adjunct comprises morpholine.
Claim 8
Dependent Claim
16 words
A composition according to any one of claims 1 to 5, wherein said adjunct comprises dimethyl-3-amino-1-propanol.
Claim 9
Dependent Claim
16 words
A composition according to any one of claims 1 to 5 wherein said adjunct is 3-amino-1-propanol.
Claim 10
Dependent Claim
16 words
A composition according to any one of claims 1 to 5 wherein said adjunct is 3-amino-2-propanol.
Claim 11
Dependent Claim
16 words
A composition according to any one of claims 1 to 5 wherein said adjunct is 2-aminoethanol.
Claim 12
Dependent Claim
25 words
A composition according to any preceding claim, wherein the weight ratio of said tetraalkylammonium hydroxide to said adjunct is less than or equal to 1:9.
Claim 13
Dependent Claim
22 words
A composition according to claim 11, wherein the weight ratio of said tetraalkylammonium hydroxide to said adjunct is from 1:12 to 1:38.
Claim 14
Dependent Claim
20 words
A composition according to claim 12, wherein the weight ratio of said tetraalkylammonium hydroxide to said adjunct is about 1:15.
Claim 15
Dependent Claim
20 words
A composition according to any preceding claim further comprising from 0 to 0.05 percent by weight of a nonionic surfactant.
Claim 16
Dependent Claim
42 words
A composition according to claim 14, which contains: A. from 0.8 to 1.6 weight percent tetramethylammonium hydroxide as said primary alkali and B. 1-amino-3-hydroxypropane as said alkanolamine, and wherein the weight ratio of tetramethylammonium hydroxide to 1-amino-3-hydroxypropane is from 1:12 to 1:38.
Claim 17
Independent Claim
69 words
A method for developing an image-wise exposed quinone diazide positive-working photoresist, comprising the steps of: A. providing said exposed photoresist; B. providing a developer composition according to any preceding claim wherein the weight ratio of said primary alkali to said adjunct is less than 1:9: C. developing said photoresist with said developer until the exposed portions of said photoresist are cleared; and D. rinsing said developer from said photoresist.
Claim 18
Dependent Claim
14 words
A method according to Claim 16, wherein said step C is an immersion development.
Claim 19
Dependent Claim
14 words
A method according to Claim 16, wherein said step C is a spray development.
Claim 20
Independent Claim
28 words
A method according to any one of claims 16 to 18 which is carried out in a manner providing a C p value of at least about 1.33.
Claim 21
Dependent Claim
89 words
A method according to Claim 19, wherein said C p value is at least 1.33 when said exposed photoresist thickness is 1.3 mm. plus or minus 0.1 mm; the exposure energy used to expose said photoresist is from 220 to 260 millijoules per square centimeter; the soft bake temperature for said photoresist is from 115°C to 120°C; the temperature of said developer is 15°C, plus or minus 1°C; and the tool used to expose said photoresist is focused on the upper surface of said photoresist, plus or minus 1mm.
Claim 22
Independent Claim
34 words
A method according to any one of claims 16 to 20 wherein enough of said adjunct is used to prevent the formation of irregular deposits on the edges of unexposed portions of the photoresist.
References Cited (Backward Citations)
No citation records indexed.
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