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EP0285797A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Process for obtaining resist structures

Assignee: Siemens AG
•
Filing: 1988-02-29
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Granted: —
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Expires: 2008-02-29
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Abstract

Abstract Translated from German Bei der Erzeugung von Resistrukturen nach der Zweilagen-Technik werden an siliciumhalitige Positivresists eine Reihe von Anforderungen gestellt. Das neue Verfahren soll unter anderem die Profilerhaltung bzw. die Maßhaltigkeit der Resiststrukturen gewährleisten. Erfindungsgemäß werden als Resistmaterialien Vinylphenol-Vinylsilan-Copolymere folgender Struktur verwendet: <IMAGE> Bilevel-Resist When producing resist structures using the two-layer technique, a number of requirements are placed on silicon-containing positive resists. Among other things, the new process is intended to ensure the maintenance of the profile and the dimensional accuracy of the resist structures. According to the invention, vinylphenol-vinylsilane copolymers of the following structure are used as resist materials: <IMAGE> bilevel resist

Inventors

  • 👤 Recai Dr. Sezi
  • 👤 Hans-Dieter Dr. Feucht
  • 👤 Siegfried Dr. Birkle
  • 👤 Rainer Dr. Leuschner

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 08:08
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758

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