EP0285393A2
Expired / Lapsed
EP
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Wavelength Conversion Element
Assignee: NTT Inc
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Filing: 1988-03-30
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Granted: —
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Expires: 2008-03-30
Abstract
Abstract A wavelength conversion element is disclosed, which comprises a substrate (1) having integrated thereon close to each other a wavelength-tunable semiconductor laser portion (13) which oscillates in a single mode and whose oscillation wavelength can be set up at a desired value within a given wavelength range by changing operational conditions, and a saturable absorption region (12) optically connected to said wavelength-tunable semiconductor laser (13).
Inventors
- 👤 Kunishige Oe
- 👤 Hitoshi Kawaguchi
- 👤 Yuzo Yoshikuni
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 23:07
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/0607; H01S5/0608; H01S5/0609; H01S5/0601; H01S5/0602; H01S5/0611; H01S5/062; H01S5/0625; H01S5/06255; H01S5/06256; H01S5/06258
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
58 words
A wavelength conversion element, comprising a substrate having integrated thereon close to each other a wavelength-tunable semiconductor laser portion which oscillates in a single mode and whose oscillation wavelength can be set up at a desired value within a given wavelength range by changing operational conditions, and a saturable absorption region optically connected to said wavelength-tunable semiconductor laser.
Claim 2
Dependent Claim
58 words
A wavelength conversion element, comprising a substrate having integrated thereon close to each other a wavelength-tunable semiconductor laser portion which oscillates in a single mode and whose oscillation wavelength can be set up at a desired value within a given wavelength range by changing operational conditions, and a saturable absorption region optically connected to said wavelength-tunable semiconductor laser.
Claim 3
Dependent Claim
73 words
The wavelength conversion element as claimed in Claim 1, wherein said wavelength-tunable semiconductor laser portion is a multi-electrode distributed feedback semiconductor laser comprising at least two separate electrodes arranged in the direction of light axis one after another, and a diffractive grating arranged along the entire length of said light axis, said at least two separate electrodes being adjustable with respect to the quantity of current to be injected independently of each other.
Claim 4
Dependent Claim
71 words
The wavelength conversion element as claimed in Claim 1, wherein said wavelength-tunable semiconductor laser portion is a distributed reflection type semiconductor laser which comprises an active portion that lacks said diffractive grating, and a light reflecting portion composed of said diffractive grating, and wherein said light reflection portion is adapted for varying the refractive index thereof by changing the quantity of current to be injected to render the oscillation wavelength tunable.
Claim 5
Dependent Claim
48 words
The wavelength conversion element as claimed in Claim 1, wherein said saturable absorption region has the same laminated structure as that of said wavelength-tunable laser portion, and wherein said active layer in said saturable absorption region is continuously connected to said active layer in said wavelength-tunable laser portion.
References Cited (Backward Citations)
No citation records indexed.
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