Process for depositing a superconducting thin film

Abstract

Abstract This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-­perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering a power mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by final sintering of preliminary sintered material at a temperature raging from 700 to 1,500 °C, preferably from 700 to 1,300 °C. The physical vapor deposition is performed by high-­frequency sputtering technique under Ar and O₂ containing atmosphere, at a partial pressure of Ar ranging from 1.0 x 10⁻³ to 1 x 10⁻¹ Torr, preferably 5.0 x 10⁻³ to 1 x 10⁻¹ Torr and at a partial pressure of O₂ ranging from 0.5 x 10⁻³ to 1 x 10⁻¹ Torr, preferably 1.0 x 10⁻³ to 1 x 10⁻¹ Torr. The obtained thin film may be further heat-treated at a temperature ranging from 250 °C to 1,700 °C, preferably from 250 °C to 1,200 °C.

Inventors

• 👤 Nobuhiko Fujita
• 👤 Naoji Fujimori
• 👤 Hideo Itozaki
• 👤 Saburo Tanaka
• 👤 Keizo Harada
• 👤 Tetsuji Jodai

Bibliographic Details