EP0283519A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
Assignee: NTT Inc
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Filing: 1987-09-24
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Granted: —
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Expires: 2007-09-24
Abstract
Abstract High density plasma is obtained by generating plasma by electron cyclotron resonance utilizing microwave and entrapping the plasma In a plasma generation chamber by a mirror magnetic field. A target (23) is disposed in the plasma generation chamber (14) and is sputtered by Ions in the high density plasma. Thus, large quantities of ions can be generated. The ion generation apparatus of the invention can be applied to a thin film formation apparatus which Introduces the ions and neutral particles onto a substrate (21) to form a thin film, and also to an ion source by providing an ion pickup grid in order to form a thin film on the substrate or to etch the thin film. The film can be formed at a high speed even when the voltage to be applied to the target is reduced, by disposing permanent magnets (34A, 34B) for leaking the inner surface magnetic flux of the target at the positions corresponding to the upper and lower ends of the target (23) ln the plasma generation chamber (14).
Inventors
- 👤 Morito Matsuoka
- 👤 Ken'ichi Ono
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 05:05
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J27/00; H01J27/02; H01J27/16; H01J27/18; H01J37/32009; H01J37/32192; H01J37/32357; H01J37/3266; H01J37/32678; H01J2237/00; H01J2237/06; H01J2237/08; H01J2237/081
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
148 words
An ion generation apparatus characterized by comprising: a vacuum chamber consisting of a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of the introduced microwave and an end portion of said plasma generation chamber all connected with each other in the order named and further having a gas introduction inlet; a target disposed in said plasma generation chamber and applied with a negative voltage; and at least one pair of magnetic field producing means which are disposed around said vacuum waveguide and said end portion of said plasma generation chamber so that a mirror field is produced in such a way that the center of the magnetic field exists within said plasma generation chamber.
Claim 2
Dependent Claim
148 words
An ion generation apparatus characterized by comprising: a vacuum chamber consisting of a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of the introduced microwave and an end portion of said plasma generation chamber all connected with each other in the order named and further having a gas introduction inlet; a target disposed in said plasma generation chamber and applied with a negative voltage; and at least one pair of magnetic field producing means which are disposed around said vacuum waveguide and said end portion of said plasma generation chamber so that a mirror field is produced in such a way that the center of the magnetic field exists within said plasma generation chamber.
Claim 3
Dependent Claim
48 words
An ion generation apparatus as claimed in claim 1, characterized in that at least one pair of second magnetic field producing means is disposed to surround said plasma generation chamber in opposite magnetic polarity relationship so that the magnetic flux leaks to the inner surface of said target.
Claim 4
Dependent Claim
22 words
An ion generation apparatus as claimed in claim 2, characterized in that said second magnetic field producing means is ring-shaped permanent magnet.
Claim 5
Dependent Claim
21 words
An ion generation apparatus as claimed in claim 2, characterized in that said second magnetic field producing means is magnetic yoke.
Claim 6
Dependent Claim
50 words
An ion generation apparatus as claimed in claim 1, characterized in that around said vacuum waveguide a magnetic flux absorbing yoke is disposed in such a way that said yoke surrounds one of said at least one pair of magnetic flux producing means and is disposed along said vacuum waveguide.
Claim 7
Dependent Claim
33 words
An ion generation apparatus as claimed in claim 1, characterized in that said vacuum waveguide is connected to said plasma generation chamber in the direction perpendicular to the direction of the magnetic flux.
Claim 8
Dependent Claim
38 words
An ion generation apparatus as claimed in claim 5, characterized in that said vacuum waveguide has at least one bend and said microwave introduction window is disposed at a position which cannot be viewed directly from said target.
Claim 9
Dependent Claim
38 words
An ion generation apparatus as claimed in claim 6, characterized in that said vacuum waveguide has at least one bend and said microwave introduction window is disposed at a position which cannot be viewed directly from said target.
Claim 10
Dependent Claim
160 words
A thin film forming apparatus characterized by comprising: a vacuum chamber consisting of a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of the introduced microwave, an end portion of said plasma generation chamber and a specimen chamber having a substrate holder disposed therein all of which are connected with each other in the order named and further having a gas introduction inlet; a target disposed within said plasma generation chamber and applied with a negative voltage; and at least one pair of magnetic field producing means disposed to surround said vacuum waveguide and said end portion of said plasma generation chamber so that a mirror field is produced in such a way that the center of the magnetic field exists within said plasma generation chamber.
Claim 11
Dependent Claim
160 words
A thin film forming apparatus characterized by comprising: a vacuum chamber consisting of a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of the introduced microwave, an end portion of said plasma generation chamber and a specimen chamber having a substrate holder disposed therein all of which are connected with each other in the order named and further having a gas introduction inlet; a target disposed within said plasma generation chamber and applied with a negative voltage; and at least one pair of magnetic field producing means disposed to surround said vacuum waveguide and said end portion of said plasma generation chamber so that a mirror field is produced in such a way that the center of the magnetic field exists within said plasma generation chamber.
Claim 12
Dependent Claim
48 words
A thin film forming apparatus as claimed in claim 9, characterized in that at least one pair of second magnetic field producing means are disposed around said plasma generation chamber in opposite magnetic polarity relationship so that the magnetic flux leaks to the inner surface of said target.
Claim 13
Dependent Claim
23 words
A thin film forming apparatus as claimed in claim 10, characterized in that said second magnetic field producing means is ring-shaped permanent magnet.
Claim 14
Dependent Claim
22 words
A thin film forming apparatus as claimed in claim 10, characterized in that said second magnetic field producing means is magnetic yoke.
Claim 15
Dependent Claim
46 words
A thin film forming apparatus as claimed in claim 9, characterized in that around said vacuum waveguide a magnetic flux absorbing yoke is disposed in such a way that said yoke surrounds one of said magnetic field producing means and is disposed along said vacuum waveguide.
Claim 16
Dependent Claim
41 words
A thin film forming apparatus as claimed in claim 9, characterized in that said vacuum waveguide is connected to said plasma generation chamber in the direction perpendicular to the direction of the magnetic flux produced by said magnetic field producing means.
Claim 17
Dependent Claim
39 words
A thin film forming apparatus as claimed in claim 13, characterized in that said vacuum waveguide has at least one bend and said microwave introduction window is disposed at a position which cannot be viewed directly from said target.
Claim 18
Dependent Claim
39 words
A thin film forming apparatus as claimed in claim 14, characterized in that said vacuum waveguide has at least one bend and said microwave introduction window is disposed at a position which cannot be directly viewed from said target.
Claim 19
Dependent Claim
188 words
An ion source characterized by comprising: a vacuum chamber consisting of a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of the introduced microwave, an end portion of said plasma generation chamber and a specimen chamber having a substrate holder disposed therein all of which are connected to each other in the order named and further having a gas introduction inlet; a target disposed in plasma generation chamber and applied with a negative voltage; at least one pair of magnetic field producing means disposed to surround said vacuum waveguide and said end portion of said plasma chamber so that a mirror field is produced in such a way that the center of the magnetic field exists within said plasma chamber; and an ion extraction mechanism which is disposed at said end portion of said plasma generation chamber to selectively extract ions which are obtained by sputtering of said target and are ionized within plasma.
Claim 20
Dependent Claim
188 words
An ion source characterized by comprising: a vacuum chamber consisting of a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of the introduced microwave, an end portion of said plasma generation chamber and a specimen chamber having a substrate holder disposed therein all of which are connected to each other in the order named and further having a gas introduction inlet; a target disposed in plasma generation chamber and applied with a negative voltage; at least one pair of magnetic field producing means disposed to surround said vacuum waveguide and said end portion of said plasma chamber so that a mirror field is produced in such a way that the center of the magnetic field exists within said plasma chamber; and an ion extraction mechanism which is disposed at said end portion of said plasma generation chamber to selectively extract ions which are obtained by sputtering of said target and are ionized within plasma.
Claim 21
Dependent Claim
47 words
An ion source as claimed in claim 17, characterized in that at least one pair of second magnetic field producing means are disposed to surround said plasma generation chamber in opposite magnetic polarity relationship so that the magnetic flux leaks to the inner surface of said target.
Claim 22
Dependent Claim
21 words
An in source as claimed in claim 18, characterized in that said second magnetic field producing means is ring-shaped permanent magnet.
Claim 23
Dependent Claim
20 words
An ion source as claimed in claim 18, characterized in that said second magnetic field producing means is magnetic yoke.
Claim 24
Dependent Claim
42 words
An ion source as claimed in claim 17, characterized in that around said vacuum waveguide a magnetic flux absorbing yoke is disposed in such a way that said yoke surrounds said magnetic field producing means and is disposed along said vacuum waveguide.
Claim 25
Dependent Claim
39 words
An ion source as claimed in claim 17, characterized in that said vacuum waveguide is connected to said plasma generation chamber in the direction perpendicular to the direction of the magnetic flux produced by said magnetic field producing means.
Claim 26
Dependent Claim
37 words
An ion source as claimed in claim 21, characterized in that said vacuum waveguide has at least one bend and said microwave introduction window is disposed at a position which cannot be viewed directly from said target.
Claim 27
Dependent Claim
37 words
An ion source as claimed in claim 22, characterized in that said vacuum waveguide has at least one bend and said microwave introduction window is disposed at a position which cannot be viewed directly from said target.
References Cited (Backward Citations)
No citation records indexed.
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