Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
82 words
A thin film single crystal substrate which comprises a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride.
Claim 2
Dependent Claim
82 words
A thin film single crystal substrate which comprises a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride.
Claim 3
Dependent Claim
27 words
The thin film single crystal substrate according to claim 1, which further comprises an intermediate layer between the base substrate and the thin film of single crystal.
Claim 4
Dependent Claim
19 words
The thin film single crystal substrate according to claim 2, wherein the intermediate layer comprises a diamond single crystal.
Claim 5
Dependent Claim
37 words
The thin film single crystal substrate according to claim 1, wherein the diamond single crystal base is made of a p-type diamond containing at least one impurity element selected from the group consisting of boron and aluminum.
Claim 6
Dependent Claim
28 words
The thin film single crystal substrate according to claim 1, wherein the thin film single crystal comp rises a thin film of cubic system silicon carbide single crystal.
Claim 7
Dependent Claim
27 words
The thin film single crystal substrate according to claim 1, wherein the thin film single crystal comprises a thin film of hexagonal system silicon carbide single crystal.
Claim 8
Dependent Claim
44 words
The thin film single crystal substrate according to claim 1, wherein the thin film single crystal comprises a thin film of a p-type silicon carbide single crystal containing at least one impurity element selected from the group consisting of boron, aluminum, gallium and indium.
Claim 9
Dependent Claim
45 words
The thin film single crystal substrate according to claim 1, wherein the thin film single crystal comprises a thin film of an n-type silicon carbide single crystal containing at least one impurity element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and lithium.