EP0281038A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Film carrier and method of manufacturing same
Assignee: Eneos Corp
•
Filing: 1988-02-26
•
Granted: —
•
Expires: 2008-02-26
Abstract
Abstract There is provided a film carrier comprising a resin base film (2) and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5 % by weight of one or two or more selected from a group consisting of P 0.005 - 0.05 wt%, B 0.005 - 0.05 wt%, Al 0.01 - 0.5 wt%, As 0.01 - 0.5 wt%, Cd 0.01 - 0.5 wt%, Co 0.01 - 0.5 wt%, Fe 0.01 - 0.5 wt%, In 0.01 - 0.5 wt%, Mg 0.01 - 0.5 wt%, Mn 0.01 - 0.5 wt%, Ni 0.01 - 0.5 wt%, Si 0.01 - 0.5 wt%, Sn 0.01 - 0.5 wt%, Te 0.01 - 0.5 wt%, Ag 0.01 - 1 wt%, Cr 0.01 - 1 wt%, Hf 0.01 - 1 wt%, Zn 0.01 - 1 wt% and Zn 0.01 - 1 wt% and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followd by etching.
Inventors
- 👤 Masahiro Tsuji
- 👤 Susumu Kawauchi
- 👤 Hiroshi Nakayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 16:55
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H05; H05K; H05K1/00; H05K1/02; H05K1/09; H10W70/67; H10W70/688; H10W72/00; H10W72/01; H10W72/019; H05K1/03; H05K1/0393; H05K2201/00; H05K2201/03; H05K2201/0332; H05K2201/0335; H05K2201/0355; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121; Y10T428/00; Y10T428/31504; Y10T428/31678; Y10T428/31681; Y10T428/31692
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
173 words
1) A film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5 % by weight of one or two or more selected from the group consisting of P 0.005 - 0.05 wt%, B 0.005 - 0.05 wt%, Al 0.01 - 0.5 wt%, As 0.01 - 0.5 wt%, Cd 0.01 - 0.5 wt%, Co 0.01 - 0.5 wt%, Fe 0.01 - 0.5 wt%, In 0.01 - 0.5 wt%, Mg 0.01 - 0.5 wt%, Mn 0.01 - 0.5 wt%, Ni 0.01 - 0.5 wt%, Si 0.01 - 0.5 wt%, Sn 0.01 - 0.5 wt%, Te 0.01 - 0.5 wt%, Ag 0.01 - 1 wt%, Cr 0.01 - 1 wt%, Hf 0.01 - 1 wt%, Zn 0.01 - 1 wt% and Zr 0.01 - 1 wt% and the remainder Cu with inevitable impurities.
Claim 2
Dependent Claim
173 words
1) A film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5 % by weight of one or two or more selected from the group consisting of P 0.005 - 0.05 wt%, B 0.005 - 0.05 wt%, Al 0.01 - 0.5 wt%, As 0.01 - 0.5 wt%, Cd 0.01 - 0.5 wt%, Co 0.01 - 0.5 wt%, Fe 0.01 - 0.5 wt%, In 0.01 - 0.5 wt%, Mg 0.01 - 0.5 wt%, Mn 0.01 - 0.5 wt%, Ni 0.01 - 0.5 wt%, Si 0.01 - 0.5 wt%, Sn 0.01 - 0.5 wt%, Te 0.01 - 0.5 wt%, Ag 0.01 - 1 wt%, Cr 0.01 - 1 wt%, Hf 0.01 - 1 wt%, Zn 0.01 - 1 wt% and Zr 0.01 - 1 wt% and the remainder Cu with inevitable impurities.
Claim 3
Dependent Claim
20 words
2) The film carrier according to the claim 1 wherein one or more of In, Sn and Ag is selected.
Claim 4
Dependent Claim
22 words
3) The film carrier according to the claim 1 or 2 wherein the content of oxygen is not more than 50 ppm.
Claim 5
Dependent Claim
179 words
4) A method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by providing a rolled copper alloy foil having the composition consisting essentially of a total of 0.005 to 1.5 % by weight of one or two or more selected from the group consisting of P 0.005 - 0.05 wt%, B 0.005 - 0.05 wt%, Al 0.01 - 0.5 wt%, As 0.01 - 0.5 wt%, Cd 0.01 - 0.5 wt%, Co 0.01 - 0.5 wt%, Fe 0.01 - 0.5 wt%, In 0.01 - 0.5 wt%, Mg 0.01 - 0.5 wt%, Mn 0.01 - 0.5 wt%, Ni 0.01 - 0.5 wt%, Si 0.01 - 0.5 wt%, Sn 0.01 - 0.5 wt%, Te 0.01 - 0.5 wt%, Ag 0.01 - 1 wt%, Cr 0.01 - 1 wt%, Hf 0.01 - 1 wt%, Zn 0.01 - 1 wt% and Zr 0.01 - 1 wt% and the remainder Cu with inevitable impurities, and by laminating the foil onto a resin base film, followed by etching.
Claim 6
Dependent Claim
179 words
4) A method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by providing a rolled copper alloy foil having the composition consisting essentially of a total of 0.005 to 1.5 % by weight of one or two or more selected from the group consisting of P 0.005 - 0.05 wt%, B 0.005 - 0.05 wt%, Al 0.01 - 0.5 wt%, As 0.01 - 0.5 wt%, Cd 0.01 - 0.5 wt%, Co 0.01 - 0.5 wt%, Fe 0.01 - 0.5 wt%, In 0.01 - 0.5 wt%, Mg 0.01 - 0.5 wt%, Mn 0.01 - 0.5 wt%, Ni 0.01 - 0.5 wt%, Si 0.01 - 0.5 wt%, Sn 0.01 - 0.5 wt%, Te 0.01 - 0.5 wt%, Ag 0.01 - 1 wt%, Cr 0.01 - 1 wt%, Hf 0.01 - 1 wt%, Zn 0.01 - 1 wt% and Zr 0.01 - 1 wt% and the remainder Cu with inevitable impurities, and by laminating the foil onto a resin base film, followed by etching.
Claim 7
Dependent Claim
19 words
5) The method according to the claim 4 wherein one or more of In, Sn and Ag is selected.
Claim 8
Dependent Claim
21 words
6) The method according to the claim 4 or 5 wherein the content of oxygen is not more than 50 ppm.
Claim 9
Dependent Claim
192 words
7) A method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by providing a rolled copper alloy foil having the composition consisting essentially of a total of 0.005 to 1.5 % by weight of one or two or more selected from the group consisting of P 0.005 - 0.05 wt%, B 0.005 - 0.05 wt%, Al 0.01 - 0.5 wt%, As 0.01 - 0.5 wt%, Cd 0.01 - 0.5 wt%, Co 0.01 - 0.5 wt%, Fe 0.01 - 0.5 wt%, In 0.01 - 0.5 wt%, Mg 0.01 - 0.5 wt%, Mn 0.01 - 0.5 wt%, Ni 0.01 - 0.5 wt%, Si 0.01 - 0.5 wt%, Sn 0.01 - 0.5 wt%, Te 0.01 - 0.5 wt%, Ag 0.01 - 1 wt%, Cr 0.01 - 1 wt%, Hf 0.01 - 1 wt%, Zn 0.01 - 1 wt% and Zr 0.01 - 1 wt% and the remainder Cu with inevitable impurities, and by strain relief annealing the foil after its final cold rolling and then laminating the annealed foil onto a resin base film, followed by etching.
Claim 10
Dependent Claim
192 words
7) A method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by providing a rolled copper alloy foil having the composition consisting essentially of a total of 0.005 to 1.5 % by weight of one or two or more selected from the group consisting of P 0.005 - 0.05 wt%, B 0.005 - 0.05 wt%, Al 0.01 - 0.5 wt%, As 0.01 - 0.5 wt%, Cd 0.01 - 0.5 wt%, Co 0.01 - 0.5 wt%, Fe 0.01 - 0.5 wt%, In 0.01 - 0.5 wt%, Mg 0.01 - 0.5 wt%, Mn 0.01 - 0.5 wt%, Ni 0.01 - 0.5 wt%, Si 0.01 - 0.5 wt%, Sn 0.01 - 0.5 wt%, Te 0.01 - 0.5 wt%, Ag 0.01 - 1 wt%, Cr 0.01 - 1 wt%, Hf 0.01 - 1 wt%, Zn 0.01 - 1 wt% and Zr 0.01 - 1 wt% and the remainder Cu with inevitable impurities, and by strain relief annealing the foil after its final cold rolling and then laminating the annealed foil onto a resin base film, followed by etching.
Claim 11
Dependent Claim
19 words
8) The method according to the claim 7 wherein one or more of In, Sn and Ag is selected.
Claim 12
Dependent Claim
21 words
9) The method according to the claim 7 or 8 wherein the content of oxygen is not more than 50 ppm.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.