EP0279638A2
Expired / Lapsed
EP
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Multi-gate thin film transistor
Assignee: Xerox Corp
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Filing: 1988-02-17
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Granted: —
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Expires: 2008-02-17
Abstract
Abstract A thin film transistor (34) in which there is independent injection control of both electrons and holes into the charge transport layer (44). Control is achieved by a gate electrode (38 and 40) facing each of the electron and hole injecting electrodes (52 and 54). The injecting electrodes are contiguous with the charge transport layer and are laterally spaced from one another across a channel region (60) of the charge transport layer so that the respective charge carriers travel in opposite directions through the charge transport layer.hannel region.
Inventors
- 👤 Malcolm James Thompson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 05:22
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/34; H10D48/345
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
194 words
A thin film transistor including a charge transport layer, an electron injecting electrode contiguous with said charge transport layer, a hole injecting electrode contiguous with said charge transport layer, said electron injecting and hole injecting electrodes having their facing edges laterally spaced relative to one another by a first distance which defines the channel region of said charge transport layer, a dielectric layer having one side contiguous with the opposite side of said charge transport layer and sustantially coextensive with the entire lateral dimension of said charge transport layer, and first and second control electrodes each being located in facing relationship with one of said injecting electrodes so that the facing edges of said control electrodes are laterally spaced from one another by substantially said first distance, said control electrodes being spaced from said charge transport layer by the dielectric layer, the facing surfaces of said control electrodes and said injecting electrodes being separated by a second distance which is substantially smaller than said first distance, whereby electrons and holes may be selectively injected into said charge transport layer and each will travel in a direction opposite to the other across said channel region.
Claim 2
Dependent Claim
194 words
A thin film transistor including a charge transport layer, an electron injecting electrode contiguous with said charge transport layer, a hole injecting electrode contiguous with said charge transport layer, said electron injecting and hole injecting electrodes having their facing edges laterally spaced relative to one another by a first distance which defines the channel region of said charge transport layer, a dielectric layer having one side contiguous with the opposite side of said charge transport layer and sustantially coextensive with the entire lateral dimension of said charge transport layer, and first and second control electrodes each being located in facing relationship with one of said injecting electrodes so that the facing edges of said control electrodes are laterally spaced from one another by substantially said first distance, said control electrodes being spaced from said charge transport layer by the dielectric layer, the facing surfaces of said control electrodes and said injecting electrodes being separated by a second distance which is substantially smaller than said first distance, whereby electrons and holes may be selectively injected into said charge transport layer and each will travel in a direction opposite to the other across said channel region.
Claim 3
Dependent Claim
33 words
The thin film transistor as recited in claim 1 characterized in that said injecting electrodes are oppositely doped in order for each to inject either electrons or holes in accordance with its doping.
Claim 4
Dependent Claim
42 words
The thin film transistor as recited in claim 1 characterized in that said charge transport layer is doped, one of said injecting electrodes is oppositely doped and said other injecting electrode comprises an electrically conductive contact contiguous with said charge transport layer.
Claim 5
Dependent Claim
36 words
The thin film transistor as recited in claim 3 characterized in that said charge transport layer is doped p+, one of said injecting electrodes is doped n+ and said other injecting electrode comprises a metal contact.
Claim 6
Dependent Claim
26 words
The thin film transistor as recited in any preceding claim characterized in that said first distance is about a hundred times greater than said second distance.
Claim 7
Dependent Claim
60 words
The thin film transistor as recited in any preceding claim characterized by further including a third control electrode facing said channel region and spaced from said charge transport layer by the dielectric layer, said third control electrode affecting the lateral transport of the injected electrons and holes by causing them to move in separated lateral paths of said channel region.
Claim 8
Dependent Claim
23 words
The thin film transistor as recited in any preceding claim characterized in that said charge carrier transport means comprises an amorphous silicon layer.
References Cited (Backward Citations)
No citation records indexed.
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