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EP0276959A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Process for producing crystal article

Assignee: Canon Inc
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Filing: 1988-01-25
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Granted: —
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Expires: 2008-01-25
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Abstract

Abstract process for producing a crystal article comprises the step of preparing a substrate having a concavity and a nucleation surface provided thereon, said nucleation surface being constituted of a material which is sufficiently greater in nucleation density than the material constituting the bottom surface of the concavity and having a surface area which is sufficiently small to the extent such only a single nucleus can grow, the step of forming a single nucleus on said nucleation surface and permitting a single crystal to grow by applying crystal growth treatment onto said nucleus, and the step of removing the surface portion of the crystal formed over the upper surface of the convexity of said substrate by selective polishing.

Inventors

  • 👤 Hidemasa Mizutani

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-01 13:13
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 118 words
A process for producing a crystal article, comprising the step of preparing a substrate having a recess and a nucleation surface provided thereon, said nucleation surface being constituted of a material which is sufficiently greater in nucleation density than the material constituting the bottom surface of the recess and having a surface area which is sufficiently small to the extent such only a single nucleus can grow, the step of forming a single nucleus on said nucleation surface and permitting a single crystal to grow by applying crystal growth treatment onto said nucleus, and the step of removing the surface portion of the crystal formed over the upper surface of the convexity of said substrate by selective polishing.
Claim 2
Dependent Claim 118 words
A process for producing a crystal article, comprising the step of preparing a substrate having a recess and a nucleation surface provided thereon, said nucleation surface being constituted of a material which is sufficiently greater in nucleation density than the material constituting the bottom surface of the recess and having a surface area which is sufficiently small to the extent such only a single nucleus can grow, the step of forming a single nucleus on said nucleation surface and permitting a single crystal to grow by applying crystal growth treatment onto said nucleus, and the step of removing the surface portion of the crystal formed over the upper surface of the convexity of said substrate by selective polishing.
Claim 3
Dependent Claim 91 words
A process for producing a crystal article, comprising providing a nucleation surface on or in the surface of a substrate, the nucleation surface being of a material whose nucleation density is sufficiently greater than that of the material constituting the substrate, and the area of the nucleation surface being sufficiently small, that only a single nucleus can grow, forming a single nucleus on said nucleation surface and applying a crystal growth treatment to the nucleus to grow a single crystal thereon, and selectively polishing the crystal to flatten the surface thereof.
Claim 4
Dependent Claim 91 words
A process for producing a crystal article, comprising providing a nucleation surface on or in the surface of a substrate, the nucleation surface being of a material whose nucleation density is sufficiently greater than that of the material constituting the substrate, and the area of the nucleation surface being sufficiently small, that only a single nucleus can grow, forming a single nucleus on said nucleation surface and applying a crystal growth treatment to the nucleus to grow a single crystal thereon, and selectively polishing the crystal to flatten the surface thereof.

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