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EP0276572A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Intermediate potential generating circuit

Assignee: Toshiba Corp
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Filing: 1987-12-23
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Granted: —
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Expires: 2007-12-23
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Abstract

Abstract This invention provides an intermediate potential generating circuit comprising a load element (Q01) of which one end is connected to a first potential supply source (V DD ), a first transistor (Q02) of a first conductivity type of which one end and the gate are connected to the other end of the load element (Q01), a second transistor (Q03) of a second conductivity type of which one end is connected to the other end of the first transistors (Q01), and the gate and the other end are connected together, a constant-voltage means (Q04) connected between the other end of the second transistor (Q03) and a second potential supply source (V SS ) for causing a specified voltage drop between the ends of the constant-voltage means, a third transistor (Q05) of the first conductivity type of which one end is connected to the first potential supply source (V DD ), the gate is connected to a note (n1) between the load element (Q01) and the first transistor (Q02), and the other end is connected to an output terminal (V out ) and a fourth transistor (Q06) of the second conductivity type which is connected between the output terminal (V out ) and the second supply source (V SS ) and of which the gate is connected to a node (n2) between the second transistor (Q03) and the constant-voltage means (Q04).

Inventors

  • 👤 Kazuhiro C/O Patent Division Sawada
  • 👤 Takayasu C/O Patent Division Sakurai

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-01 23:37
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/247; G11; G11C; G11C5/00; G11C5/14; G11C5/145; G11C5/146; G11C5/147

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 228 words
An intermediate potential generating circuit comprising, a load element (Q01) of which one end is connected to a first potential supply source (V DD ); a first transistor (Q02) of a first conductivity type of which one end and the gate are connected to the other end of the load element (Q01); a second transistor (Q03) of a second conductivity type of which one end is connected to the other end of the first transistor (Q01), and the gate and the other end are connected together; a third transistor (Q05) of the first conductivity type of which one end is connected to the first potential supply source (V DD ), the gate is connected to a node (n1) between the load element (Q01) and the first transistor (Q02), and the other end is connected to an output terminal (V out ); and a fourth transistor (Q06) of the second conductivity type which is connected between the output terminal (V out ) and the second supply source (V SS ) and of which the gate is connected to the gate and the said other end of the second transistor (Q03), characterised by a constant-voltage means (Q04), connected between the other end of the second transistor (Q03) and a second potential supply source (V SS ) for causing a specified voltage drop between the end of the constant voltage means.
Claim 2
Dependent Claim 228 words
An intermediate potential generating circuit comprising, a load element (Q01) of which one end is connected to a first potential supply source (V DD ); a first transistor (Q02) of a first conductivity type of which one end and the gate are connected to the other end of the load element (Q01); a second transistor (Q03) of a second conductivity type of which one end is connected to the other end of the first transistor (Q01), and the gate and the other end are connected together; a third transistor (Q05) of the first conductivity type of which one end is connected to the first potential supply source (V DD ), the gate is connected to a node (n1) between the load element (Q01) and the first transistor (Q02), and the other end is connected to an output terminal (V out ); and a fourth transistor (Q06) of the second conductivity type which is connected between the output terminal (V out ) and the second supply source (V SS ) and of which the gate is connected to the gate and the said other end of the second transistor (Q03), characterised by a constant-voltage means (Q04), connected between the other end of the second transistor (Q03) and a second potential supply source (V SS ) for causing a specified voltage drop between the end of the constant voltage means.
Claim 3
Dependent Claim 65 words
An intermediate potential generating circuit as claimed in claim 1, furter characterised in that the sum of the threshold voltage of the first MOS transistor (Q02) and the absolute value of the threshold voltage of the second transistor (Q03) is smaller than the sum of the threshold voltage of the third transistor (Q04) and the absolute value of the threshold of the fourth transistor (Q05).
Claim 4
Dependent Claim 46 words
An intermediate potential generating circuit as claimed in claim 1 or claim 2, further characterised in that the first transistor (Q02) is provided with a back gate, the back gate being connected to a node (n3) between the first transistor (Q02) and the second transistor (Q03).
Claim 5
Dependent Claim 44 words
An intermediate potential generating circuit as claimed in any preceding claim, further characterised in that the second transistor (Q03) is provided with a back gate, the back gate being connected to the node (n3) between the first transistor (Q02) and the second transistor (Q03).
Claim 6
Dependent Claim 28 words
An intermediate potential generating circuit as claimed in any preceding claim, further characterised in that the constant-voltage means comprises a fifth transistor (Q04) of the first conductivity type.
Claim 7
Dependent Claim 24 words
An intermediate potential generating circuit as claimed in any of claims 1 to 4, further characterised in that the constant-voltage means comprises a diode.
Claim 8
Dependent Claim 21 words
An intermediate potential generating circuit as claimed in any preceding claim, further characterised in that the load element comprises a resistor.

References Cited (Backward Citations)

EP0205104A2 Cited

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