EP0276140A2
Expired / Lapsed
EP
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A light emitting semiconductor device
Assignee: Hiroshima University
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Filing: 1988-01-20
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Granted: —
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Expires: 2008-01-20
Abstract
Abstract The disclosed light emitting semiconductor device has an n-type (or p-type) base region sandwiched by a p-type (or n-type) emitter region and a p-type (or n-type) collector region. An injecting voltage source is connected across the emitter region and base region so as to apply a constant voltage therebetween, while a control voltage source is connected across the emitter region and the collector region so as to selectively apply a reverse bias to a base-collector junction for controlling recombination of carriers injected to the base region. The control voltage source produces such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.
Inventors
- 👤 Masamichi Yamanishi
- 👤 Ikuo 1-104 Hirodai-Gagara-Daiichi Suemune
- 👤 Yasuo B-206 Iwata Apartment Kan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 16:09
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/062; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06203; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H01S5/06209; H01S5/06216; H01S5/20; H01S5/22; H01S5/223; H01S5/30; H01S5/32; H01S5/3222; H01S5/34; H01S5/3428
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
192 words
A light emitting semiconductor device, comprising an emitter region with one type carriers, the emitter region having an emitter electrode attached thereto; a base region with opposite type carriers, the base region being formed on one side of said emitter region and having a base electrode attached thereto; a collector region with said one type carriers, the collector region being formed on opposite side of said base region to the emitter region and having a collector electrode attached thereto; an injecting voltage source connected across the emitter electrode and the base electrode so as to apply a constant voltage between the emitter region and the base region; and a control voltage source connected across the emitter electrode and the collector electrode so as to selectively apply a reverse bias to a base-collector junction between the base region and the collector region for controlling recombination of carriers injected to the base region, the control voltage source producing such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.
Claim 2
Dependent Claim
192 words
A light emitting semiconductor device, comprising an emitter region with one type carriers, the emitter region having an emitter electrode attached thereto; a base region with opposite type carriers, the base region being formed on one side of said emitter region and having a base electrode attached thereto; a collector region with said one type carriers, the collector region being formed on opposite side of said base region to the emitter region and having a collector electrode attached thereto; an injecting voltage source connected across the emitter electrode and the base electrode so as to apply a constant voltage between the emitter region and the base region; and a control voltage source connected across the emitter electrode and the collector electrode so as to selectively apply a reverse bias to a base-collector junction between the base region and the collector region for controlling recombination of carriers injected to the base region, the control voltage source producing such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.
Claim 3
Dependent Claim
47 words
A light emitting semiconductor device as set forth in claim 1, wherein said base region is 100 to 3,000 Å thick film and forbidden gap of the base region is smaller than those of the emitter region and the collector region by not less than 0.3 eV.
Claim 4
Dependent Claim
24 words
A light emitting semiconductor device as set forth in claim 1 or 2, wherein said base region consists of multi-layers with different forbidden gaps.
Claim 5
Dependent Claim
54 words
A light emitting semiconductor device as set forth in claim 1,2 or 3, wherein said base region consists of n-type GaAs, said emitter region consists of p-type Ga 1-x Aℓ x As (x being 0.45 to 1.0), and said collector region consists of p-type Ga 1-y Aℓ y As (y being 0.6 to 1.0).
References Cited (Backward Citations)
No citation records indexed.
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