Patent EP0098956B1 successfully refreshed from Google Patents.
EP0275075A2
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Thin film transistor and method of making the same
Assignee: Hosiden Corp
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Filing: 1988-01-12
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Granted: —
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Expires: 2008-01-12
Abstract
Abstract A source electrode (12) and a drain electrode (13) are formed apart on an insulating substrate (11), and a semiconductor layer (14) is formed on the szbstrate (11) between the source and drain electrodes (12, 13). An insulating organic molecular film (21) is formed all over the source and drain electrodes (12, 13) and the semiconductor layer (14). Ions are implanted into a selected top surface region of the insulating oganic molecular film (21) corresponding to the semiconductor layer (14), by which chains of molecules in the surface region to form free carbon, providing a conductive gate electrode (22) and the remaining part of the insulating organic molecular film (21) forming a gate insulating film (23).
Inventors
- 👤 Yasuhiro C/O Hosiden Electronics Co. Ltd. Ukai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 22:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/60; H10D64/66; H10D64/667; H10D64/68; H10P14/63; H10P14/6326; H10P14/6342; H10P14/6344; H10P14/6346
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
111 words
A thin film transistor comprising: a source electrode (12) and a drain electrode (13) formed apart on an insulating substrate (11); a semiconductor layer (14) formed on he substrate (11) between the source (12) and drain (13) electrodes; a gate insulating film (23) formed in contact with the semiconductor (14); and a gate electrode (22) formed in contact with the gate insulating film (23); wherein the gate insulating film (23) is an insulating organic molecular film (21); and wherein the gate electrode (22) is formed by a conductive layer containing free carbon in a selected region of the gate insulating film (23) on the opposite side from the semiconductor layer (14).
Claim 2
Dependent Claim
111 words
A thin film transistor comprising: a source electrode (12) and a drain electrode (13) formed apart on an insulating substrate (11); a semiconductor layer (14) formed on he substrate (11) between the source (12) and drain (13) electrodes; a gate insulating film (23) formed in contact with the semiconductor (14); and a gate electrode (22) formed in contact with the gate insulating film (23); wherein the gate insulating film (23) is an insulating organic molecular film (21); and wherein the gate electrode (22) is formed by a conductive layer containing free carbon in a selected region of the gate insulating film (23) on the opposite side from the semiconductor layer (14).
Claim 3
Dependent Claim
18 words
The thin film transistor of claim 1, wherein the insulating organic molecular film (21) is formed of polyimide.
Claim 4
Dependent Claim
19 words
The thin film transistor of claim 1, wherein the insulating organic molecular film (21) is formed of stearic acid.
Claim 5
Dependent Claim
18 words
The thin film transistor of claim 1, wherein the insulating organic molecular film (21) is formed of diacetylene.
Claim 6
Dependent Claim
18 words
The thin film transistor of claim 1, wherein the insulating organic molecular film (21) is formed of phthalocyanine.
Claim 7
Dependent Claim
18 words
The thin film transistor of claim 1, wherein the insulating organic molecular film (21) is formed of anthracene.
Claim 8
Dependent Claim
36 words
The thin film transistor of claim 1, wherein the gate electrode (22) and the gate insulating film (23) are 300 n.m. (3000 Å) to 1 µm and 100 to 300 n.m. (1000 to 3000Å) thick, respectively.
Claim 9
Independent Claim
114 words
A method for the manufacture of a thin film transistor comprising the steps of: forming source and drain electrodes (12, 13) apart on an insulating substrate (11); forming a semiconductor layer (14) on the insulating substrate (11) between the source and dain electrodes (12, 13); forming an insulating organic molecular film (21) all over the source and drain electrodes (12, 13) and the semiconductor layer (14); and selectively implanting ions into the top surface of the insulating organic molecular film (21), corresponding to the semiconductor layer (14), whereby chains of molecules in the surface region of the insulating organic molecular film (210 are cut to form free carbon, providing a conductive gate electrode (22).
Claim 10
Independent Claim
114 words
A method for the manufacture of a thin film transistor comprising the steps of: forming source and drain electrodes (12, 13) apart on an insulating substrate (11); forming a semiconductor layer (14) on the insulating substrate (11) between the source and dain electrodes (12, 13); forming an insulating organic molecular film (21) all over the source and drain electrodes (12, 13) and the semiconductor layer (14); and selectively implanting ions into the top surface of the insulating organic molecular film (21), corresponding to the semiconductor layer (14), whereby chains of molecules in the surface region of the insulating organic molecular film (210 are cut to form free carbon, providing a conductive gate electrode (22).
Claim 11
Dependent Claim
27 words
The manufacturing method of claim 8, wherein the formation of the insulating organic molecular film (21) is performed by a spinner coating, offset printing, or Langmuir-Blodgett process.
Claim 12
Dependent Claim
23 words
The manufacturing method of claim 8, wherein the ion implantation is performed by implanting N⁺ ions at an acceleration energy of 90 KeV.
Claim 13
Dependent Claim
23 words
The manufacturing method of claim 8, wherein the ion implantation is performed by implanting AR⁺ ions at an acceleration energy of 150 KeV.
Claim 14
Dependent Claim
26 words
The manufacturing method of claim 8, wherein the insulating organic molecular film (21) is formed of any one of polyimide, stearic acid, diacetylene, phthalocyanine, and anthracene.
Claim 15
Dependent Claim
22 words
The manufacturing method of claim 8, wherein the ion implantation is performed selectively for a predetermined region through use of a mask.
Claim 16
Dependent Claim
23 words
The manufacturing method of claim 8, wherein the ion implantation is performed selectively for a predetermined region through control of ion beam scanning.
References Cited (Backward Citations)
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