EP0275021A2
Expired / Lapsed
EP
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Sputtering process and an apparatus for carrying out the same
Assignee: Hitachi Ltd
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Filing: 1988-01-05
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Granted: —
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Expires: 2008-01-05
Abstract
Abstract A sputtering process and an apparatus for carrying out the same for forming a film of a film forming material over the surface of a substrate (25). A target (5) formed of the film forming material is held on a sputtering electrode (4) receiving a voltage, and the substrate (25) is disposed at a predetermined distance and opposite to the target (5). A high-density plasma is produced by producing a cusp field between the target (5) and the substrate (25) and a bias voltage is applied to the surface of the substrate (25) to make ions of the high-density plasma fall on the surface of the substrate (25) in order to make the particles of the film forming material sputtered from the target deposit in a thin film over the surface of the substrate (25).
Inventors
- 👤 Hideki Tateishi
- 👤 Hiroshi Saito
- 👤 Shinji Sasaki
- 👤 Mitsuaki Horiuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 18:54
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/351; H01J37/3266; H01J37/32688; H01J37/32697; H01J37/32706; H01J37/34; H01J37/3402
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
111 words
A sputtering process for forming a thin film of a film forming material over the surface of a substrate held on a substrate electrode and disposed at a distance from and opposite to a sputtering electrode receiving a voltage and mounted with a target formed of a film forming material, comprising: producing a high-density plasma by producing a cusp field between the target and the substrate; and applying a bias voltage to the surface of the substrate to make ions fall on the surface of the substrate so that the particles of the film forming material sputtered from the target adhere to the surface of the substrate in a thin film.
Claim 2
Dependent Claim
111 words
A sputtering process for forming a thin film of a film forming material over the surface of a substrate held on a substrate electrode and disposed at a distance from and opposite to a sputtering electrode receiving a voltage and mounted with a target formed of a film forming material, comprising: producing a high-density plasma by producing a cusp field between the target and the substrate; and applying a bias voltage to the surface of the substrate to make ions fall on the surface of the substrate so that the particles of the film forming material sputtered from the target adhere to the surface of the substrate in a thin film.
Claim 3
Dependent Claim
22 words
A sputtering process according to Claim 1, wherein the bias voltage applied to the surface of the substrate is a DC voltage.
Claim 4
Dependent Claim
37 words
A sputtering process according to Claim 1, wherein a high-frequency voltage is applied to said substrate electrode mounted with the substrate to induce a negative DC voltage on the surface of the substrate facing said sputtering electrode.
Claim 5
Dependent Claim
92 words
A sputtering process according to one of claims 1 to 3, wherein said substrate is mounted in a vacuum chamber capable of being filled with an inert gas such as Ar gas, comprising producing magnetic fields of opposite poralities between the target and the substrate to produce a cusp field between the target and the substrate; and applying a voltage to the sputtering electrode to produce a high-density plasma between the surface of the target and the vicinity of the surface of the substrate and controlling the substrate at an appropriate temperature.
Claim 6
Dependent Claim
129 words
A sputtering process comprising: producing a cusp field between a target formed of a film forming material and mounted on a target electrode receiving a voltage and a substrate supported on a substrate electrode through the cooperative operation of a target magnetic device associated with the target electrode and a substrate magnetic device associated with the substrate electrode warping the magnetic lines of force of a magnetic field produced by the substrate magnetic device toward the periphery of the substrate so that the magnetic lines of force will not extend across the central portion of the substrate; and making the target sputter to deposit the film forming material in a thin film over the surface of the substrate disposed at a predetermined distance from and opposite to the target.
Claim 7
Dependent Claim
129 words
A sputtering process comprising: producing a cusp field between a target formed of a film forming material and mounted on a target electrode receiving a voltage and a substrate supported on a substrate electrode through the cooperative operation of a target magnetic device associated with the target electrode and a substrate magnetic device associated with the substrate electrode warping the magnetic lines of force of a magnetic field produced by the substrate magnetic device toward the periphery of the substrate so that the magnetic lines of force will not extend across the central portion of the substrate; and making the target sputter to deposit the film forming material in a thin film over the surface of the substrate disposed at a predetermined distance from and opposite to the target.
Claim 8
Dependent Claim
18 words
A sputtering process according to claim 5, wherein a voltage is applied to the surface of the substrate.
Claim 9
Dependent Claim
17 words
A sputtering process according to claim 5 or 6, wherein the temperature of the substrate is controlled.
Claim 10
Dependent Claim
105 words
A sputtering apparatus comprising: a vaccum chamber (1) capable of being filled with an inert gas such as Ar gas; a substrate electrode (10) for supporting a substrate (25), disposed within the vacuum chamber (1); a sputtering electrode (4) for holding a target (5) formed of a film forming material, disposed opposite to the substrate electrode (10) within the vacuum chamber (1); magnetic means (6, 17) for producing magnetic fields of opposite polarities between a substrate (25) supported on the substrate electrode (10) and a target (5) held on the sputtering electrode (4); a power source (20) for applying a voltage to the sputtering electrode;
Claim 11
Dependent Claim
105 words
A sputtering apparatus comprising: a vaccum chamber (1) capable of being filled with an inert gas such as Ar gas; a substrate electrode (10) for supporting a substrate (25), disposed within the vacuum chamber (1); a sputtering electrode (4) for holding a target (5) formed of a film forming material, disposed opposite to the substrate electrode (10) within the vacuum chamber (1); magnetic means (6, 17) for producing magnetic fields of opposite polarities between a substrate (25) supported on the substrate electrode (10) and a target (5) held on the sputtering electrode (4); a power source (20) for applying a voltage to the sputtering electrode;
Claim 12
Dependent Claim
51 words
a power source (21, 22) for applying a DC bias voltage or a high-frequency power to the substrate supported on the substrate electrode; and temperature control means for controlling the temperature of the substrate at a predetermined temperature by means of the same gas as that filled in the vacuum chamber.
Claim 13
Dependent Claim
51 words
a power source (21, 22) for applying a DC bias voltage or a high-frequency power to the substrate supported on the substrate electrode; and temperature control means for controlling the temperature of the substrate at a predetermined temperature by means of the same gas as that filled in the vacuum chamber.
Claim 14
Dependent Claim
130 words
A sputtering apparatus comprising: a substrate supporting member (10A) for supporting a substrate (25) thereon; a target electrode (4) for holding a target (5) formed of a film forming material at a predetermined distance from and opposite to a surface to be coated with a film of the substrate (25); a target magnetic device (6, 23) provided on the side of the target electrode (4) to produce a magnetic field; and a substrate magnetic device (17, 24) provided on the side of the substrate supporting member (10A) to produce a cusp field in cooperation with the magnetic field produced by the target magnetic device (6, 23) so that magnetic lines of force will not extend across the central portion of a substrate (25) supported on the substrate supporting member (10A).
Claim 15
Dependent Claim
130 words
A sputtering apparatus comprising: a substrate supporting member (10A) for supporting a substrate (25) thereon; a target electrode (4) for holding a target (5) formed of a film forming material at a predetermined distance from and opposite to a surface to be coated with a film of the substrate (25); a target magnetic device (6, 23) provided on the side of the target electrode (4) to produce a magnetic field; and a substrate magnetic device (17, 24) provided on the side of the substrate supporting member (10A) to produce a cusp field in cooperation with the magnetic field produced by the target magnetic device (6, 23) so that magnetic lines of force will not extend across the central portion of a substrate (25) supported on the substrate supporting member (10A).
Claim 16
Dependent Claim
43 words
A sputtering apparatus according to claim 9, wherein said substrate magnetic device comprises an inner electromagnet (30, 31), and an outer electromagnet (17,24) disposed around a substrate (25) supported on the substrate supporting member (10A) so as to surround the inner electromagnet (30).
Claim 17
Dependent Claim
21 words
A sputtering apparatus according to claim 9 or 10, wherein said substrate magnetic device comprises a set of permanent magnets (33).
Claim 18
Dependent Claim
38 words
A sputtering apparatus according to one of claims 9 to 11, wherein said substrate supporting member (10A) is provided with voltage applying means (12, 22) for applying a voltage to the surface of the substrate (25) mounted thereon.
Claim 19
Dependent Claim
44 words
A sputtering apparatus according to one of claims 9 to 12, wherein said substrate magnetic device (17, 24) comprises an electromagnet (17) disposed around a substrate supported on said substrate supporting member, and a yoke disposed in a space surrounded by the electromagnet (17).
Claim 20
Dependent Claim
67 words
A sputtering apparatus according to one of claims 9 to 13, wherein said substrate supporting member is a substrate electrode having a substrate mounting surface controlled at a fixed temperature; and wherein a temperature controlling gas supply means (29) is provided for supplying a temperature controlling gas between the substrate electrode (10A) and a substrate (25) supported on the substrate mounting surface of the substrate electrode (10A).
Claim 21
Dependent Claim
143 words
A plasma-processing apparatus comprising: a first electrode (4) disposed at a predetermined distance from and opposite to one surface to be processed of a substrate (25); a second electrode (10) for supporting the substrate (25); a first magnetic device (6, 6ʹ, 23) disposed on the side of the first electrode (4) to produce a magnetic field; a second magnetic device (17, 24) disposed on the side of the second electrode (10) to produce a cusp field in cooperation with the first magnetic device (6; 6ʹ, 23) between the first and second electrodes (4, 10) so that the magnetic lines of force of the magnetic field produced by the second magnetic device (17, 24) will not extend at least across the central portion of a substrate (25) supported on the second electrode (10) and to extend around the peripheral portion of the substrate (25).
Claim 22
Dependent Claim
143 words
A plasma-processing apparatus comprising: a first electrode (4) disposed at a predetermined distance from and opposite to one surface to be processed of a substrate (25); a second electrode (10) for supporting the substrate (25); a first magnetic device (6, 6ʹ, 23) disposed on the side of the first electrode (4) to produce a magnetic field; a second magnetic device (17, 24) disposed on the side of the second electrode (10) to produce a cusp field in cooperation with the first magnetic device (6; 6ʹ, 23) between the first and second electrodes (4, 10) so that the magnetic lines of force of the magnetic field produced by the second magnetic device (17, 24) will not extend at least across the central portion of a substrate (25) supported on the second electrode (10) and to extend around the peripheral portion of the substrate (25).
Claim 23
Dependent Claim
58 words
A plasma-processing apparatus according to claim 15, further comprising: moving means (51, 53) for moving said second electrode (10) between a transfer position for mounting a substrate on said second electrode (10) and a processing position for subjecting a substrate (25) to a plasma process; and conveying means (49) for conveying a substrate (25) to the transfer position.
References Cited (Backward Citations)
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