§
Luxuse
Patent Intelligence
Sign In
← Back to Patent Explorer
EP0273363A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Heterojunction bipolar transistor with ballistic operation

Assignee: NEC Corp
•
Filing: 1987-12-22
•
Granted: —
•
Expires: 2007-12-22
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract For improvement in operation speed, there is provided a heterojunction bipolar transistor comprising, a) an emitter region (27) formed of a first semiconductor material of a first conductivity type, b) a base region (24) formed of a second semiconductor material of a second conductivity type opposite to the first conductivity type and forming a first junction together with the emitter region, and c) a collector region (23) formed of a third semiconductor material of the first conductivity type and forming a second junction together with the base region, the heterojunction bipolar transistor has a plurality of abrupt potential discontinuities including first and second abrupt potential discontinuities produced in succession to provide kinetic energies to a carrier injected from the emitter region, respectively, and the first abrupt potential discontinuity is produced at one of the first and second junctions, thereby allowing the carrier to move over a distance longer than a linear free path of the carrier in the ballistic manner.

Inventors

  • 👤 Kazuhiko C/O Nec Corporation Honjo
  • 👤 Shin-Ichi C/O Nec Corporation Tanaka

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-03 13:48
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/80; H10D10/821; H10D62/00; H10D62/80; H10D62/82; H10D62/824

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 117 words
A heterojunction bipolar transistor comprising, a) an emitter region formed of a first semiconductor material of a first conductivity type, b) a base region formed of a second semiconductor material of a second conductivity type opposite to said first conductivity type and forming a first junction together with said emitter region, and c) a collector region formed of a third semiconductor material of said first conductivity type and forming a second junction together with said base region, characterized by a plurality of abrupt potential discontinuities poroduced in succession to provide kinetic energies to a carrier injected from said emitter region, respectively, one of said abrupt potential discontinuity being produced at one of said first and second junctions.
Claim 2
Dependent Claim 117 words
A heterojunction bipolar transistor comprising, a) an emitter region formed of a first semiconductor material of a first conductivity type, b) a base region formed of a second semiconductor material of a second conductivity type opposite to said first conductivity type and forming a first junction together with said emitter region, and c) a collector region formed of a third semiconductor material of said first conductivity type and forming a second junction together with said base region, characterized by a plurality of abrupt potential discontinuities poroduced in succession to provide kinetic energies to a carrier injected from said emitter region, respectively, one of said abrupt potential discontinuity being produced at one of said first and second junctions.
Claim 3
Dependent Claim 38 words
A heterojunction bipolar transistor as set forth in claim 1, in which said first junction has a first abrupt potential discontinuity of said plural abrupt potential discontinuities and other abrupt potential discontinuities are produced in said base region.
Claim 4
Dependent Claim 38 words
A heterojunction bipolar transistor as set forth in claim 1, in which said second junction has a first abrupt potential discontinuity of said plural abrupt potential discontinuities and other abrupt potential discontinuities are produced in said collector region.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Maintenance schedule is calculated for granted US utility patents.

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag